Yes...when greater is the energy required to generate a free electron (energy required by the electron to jump from valence band to conduction band)then less possibility of leakage or free electron generation when required amount of energy is not supplied..ie.factors such as temperature and less electric fields fail to release electrons ).... thereby leakage reduces when threshold voltage increases

When threshold voltage is more, the leakage current will be less. This can be explained by considering the characteristics of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and its operation.

Threshold voltage and leakage current in MOSFETs:
Threshold voltage (Vth) is the voltage at which the MOSFET starts to conduct current between its source and drain terminals. It is the minimum voltage required to establish a conductive channel in the transistor. Below this voltage, the transistor is in the cutoff region and no current flows.

Leakage current, on the other hand, refers to the small amount of current that flows through the transistor even when it is in the cutoff region. It occurs due to various mechanisms such as subthreshold conduction, gate leakage, and junction leakage. Leakage current can have detrimental effects on the performance and power consumption of electronic devices.

Explanation:
When the threshold voltage of a MOSFET is increased, it means that a higher voltage is required to turn on the transistor and establish a conductive channel. This implies that the transistor will be in the cutoff region for a larger range of input voltages.

When the MOSFET is in the cutoff region, the leakage current is expected to be minimal. This is because the transistor is designed to have a very low leakage current in this region to minimize power consumption and improve device efficiency.

Therefore, when the threshold voltage is increased, the MOSFET will operate at a higher voltage to conduct current. As a result, it will spend more time in the cutoff region, reducing the overall leakage current.

In summary, when the threshold voltage of a MOSFET is increased, the leakage current will be less. This is because a higher voltage is required to turn on the transistor, resulting in a longer duration in the cutoff region where the leakage current is minimal.