Electrical Engineering (EE) Exam > Electrical Engineering (EE) Questions > As source drain voltage increases, channel de...
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As source drain voltage increases, channel depth
- a)increases
- b)decreases
- c)logarithmically increases
- d)exponentially increses
Correct answer is option 'B'. Can you explain this answer?
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Verified Answer
As source drain voltage increases, channel deptha)increasesb)decreases...
As source drain voltage Vds increases, the channel depth at the drain end decreases.
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As source drain voltage increases, channel deptha)increasesb)decreases...
Explanation:
Relationship between source-drain voltage and channel depth:
- When the source-drain voltage increases in a field-effect transistor (FET), the electric field in the channel also increases.
- This higher electric field attracts more charge carriers towards the drain, leading to a decrease in the effective channel depth.
- The decrease in channel depth results in a higher current flow between the source and drain terminals of the FET.
Therefore, the correct answer is option 'B' - decreases.
Relationship between source-drain voltage and channel depth:
- When the source-drain voltage increases in a field-effect transistor (FET), the electric field in the channel also increases.
- This higher electric field attracts more charge carriers towards the drain, leading to a decrease in the effective channel depth.
- The decrease in channel depth results in a higher current flow between the source and drain terminals of the FET.
Therefore, the correct answer is option 'B' - decreases.
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As source drain voltage increases, channel deptha)increasesb)decreasesc)logarithmically increasesd)exponentially incresesCorrect answer is option 'B'. Can you explain this answer?
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