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The cause of the potential barrier in a p-n diodeis [1998]
- a)depletion of positive charges near thejunction
- b)concentration of positive charges near thejunction
- c)depletion of negative charges near thejunction
- d)concentration of positive and negativecharges near the junction
Correct answer is option 'D'. Can you explain this answer?
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Verified Answer
The cause of the potential barrier in a p-n diodeis [1998]a)depletion ...
During the formation of a junction diode,
holes from p-region diffuse into n-region and
electrons from n-region diffuse into p-region.
In both cases, when an electron meets a hole,
they cancel the effect of each other and as a
result, a thin layer at the junction becomes
free from any of charge carriers. This is called
depletion layer. There is a potential gradient
in the depletion layer, negative on the p-side
and positive on the n-side. The potential
difference thus developed across the
junction is called potential barrier.
holes from p-region diffuse into n-region and
electrons from n-region diffuse into p-region.
In both cases, when an electron meets a hole,
they cancel the effect of each other and as a
result, a thin layer at the junction becomes
free from any of charge carriers. This is called
depletion layer. There is a potential gradient
in the depletion layer, negative on the p-side
and positive on the n-side. The potential
difference thus developed across the
junction is called potential barrier.
Most Upvoted Answer
The cause of the potential barrier in a p-n diodeis [1998]a)depletion ...
The correct option is (d) concentration of positive and negative charges near the junction.
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The cause of the potential barrier in a p-n diodeis [1998]a)depletion ...
Understanding the Potential Barrier in a P-N Diode
The potential barrier in a p-n diode is a crucial concept in semiconductor physics. It arises due to the interaction between p-type and n-type materials.
Formation of the Depletion Region
- When p-type and n-type materials are joined, electrons from the n-side (which has excess negative charge carriers) diffuse into the p-side.
- Simultaneously, holes from the p-side (which has excess positive charge carriers) diffuse into the n-side.
Charge Carrier Redistribution
- This diffusion of electrons and holes leads to the recombination of charge carriers at the junction.
- As electrons leave the n-side, it becomes positively charged, while the p-side loses positive charge carriers (holes), becoming negatively charged.
Creating the Electric Field
- The region around the junction becomes depleted of mobile charge carriers, forming the depletion region.
- The opposite charges (positive on the n-side and negative on the p-side) create an electric field.
Establishment of the Potential Barrier
- This electric field opposes further diffusion of electrons and holes, establishing a potential barrier.
- The potential barrier height is influenced by the concentration of these charge carriers, which is why the correct answer is option 'D': concentration of positive and negative charges near the junction.
Conclusion
In summary, the potential barrier in a p-n diode is created through the concentration of positive charges (holes) from the p-side and negative charges (electrons) from the n-side, leading to a depletion region and an electric field that prevents further charge carrier movement.
The potential barrier in a p-n diode is a crucial concept in semiconductor physics. It arises due to the interaction between p-type and n-type materials.
Formation of the Depletion Region
- When p-type and n-type materials are joined, electrons from the n-side (which has excess negative charge carriers) diffuse into the p-side.
- Simultaneously, holes from the p-side (which has excess positive charge carriers) diffuse into the n-side.
Charge Carrier Redistribution
- This diffusion of electrons and holes leads to the recombination of charge carriers at the junction.
- As electrons leave the n-side, it becomes positively charged, while the p-side loses positive charge carriers (holes), becoming negatively charged.
Creating the Electric Field
- The region around the junction becomes depleted of mobile charge carriers, forming the depletion region.
- The opposite charges (positive on the n-side and negative on the p-side) create an electric field.
Establishment of the Potential Barrier
- This electric field opposes further diffusion of electrons and holes, establishing a potential barrier.
- The potential barrier height is influenced by the concentration of these charge carriers, which is why the correct answer is option 'D': concentration of positive and negative charges near the junction.
Conclusion
In summary, the potential barrier in a p-n diode is created through the concentration of positive charges (holes) from the p-side and negative charges (electrons) from the n-side, leading to a depletion region and an electric field that prevents further charge carrier movement.
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The cause of the potential barrier in a p-n diodeis [1998]a)depletion of positive charges near thejunctionb)concentration of positive charges near thejunctionc)depletion of negative charges near thejunctiond)concentration of positive and negativecharges near the junctionCorrect answer is option 'D'. Can you explain this answer?
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