Semiconductor Devices using Silicon-Carbide

Silicon carbide (SiC) is a compound of silicon and carbon, which is a wide-bandgap semiconductor material. It has excellent properties such as high thermal conductivity, high electric field breakdown strength, and high saturation electron velocity, making it an attractive material for the fabrication of high-power electronic devices. The following are the reasons why silicon carbide is a preferred choice for manufacturing state-of-the-art semiconductor devices.

High Breakdown Voltage

Silicon carbide has a high electric field breakdown strength, which is higher than that of silicon and other conventional semiconductors. This property allows SiC devices to operate at higher voltages, enabling high-power and high-voltage applications.

High Thermal Conductivity

SiC has a thermal conductivity of about 3x higher than that of silicon. It means that SiC devices can dissipate heat more efficiently, making them suitable for high-temperature applications.

High Switching Speed

SiC devices have a high saturation electron velocity, which enables them to switch faster than conventional silicon-based devices. This property allows SiC devices to operate at higher frequencies, making them ideal for high-frequency applications.

Low On-Resistance

SiC devices have a low on-resistance, which means that they can handle high currents while dissipating less power. It leads to higher efficiency and reduced power losses.

Applications

SiC devices are used in various applications such as power electronics, aerospace, automotive, and renewable energy. They are used in inverters, motor drives, power supplies, and electric vehicles. SiC devices are also used in high-temperature applications such as oil drilling and geothermal energy.

Conclusion

SiC is a promising material for the fabrication of state-of-the-art semiconductor devices due to its excellent properties such as high thermal conductivity, high electric field breakdown strength, and high saturation electron velocity. SiC devices offer high efficiency, high power density, and high reliability, making them suitable for various applications.