Explanation:
When plotting the static V-I curve of an Insulated Gate Bipolar Transistor (IGBT), the parameter used to vary the curve is the voltage between the gate and emitter, Vge. This is the correct answer (option C).

Understanding IGBT:
An IGBT is a three-terminal power semiconductor device that combines the high-speed switching capability of a MOSFET with the high-voltage capability of a bipolar transistor. It consists of a MOSFET and a bipolar transistor connected in series.

V-I Curve:
The V-I curve represents the relationship between the voltage (V) across the IGBT and the current (I) passing through it. It provides valuable information about the device's operating characteristics and performance.

Parameters for Plotting the V-I Curve:
To plot the V-I curve of an IGBT, different parameters can be used as the independent variable. These parameters include:

a) Vce (Collector-Emitter Voltage): This is the voltage between the collector and emitter terminals of the IGBT. While Vce is an important parameter for analyzing the IGBT's characteristics, it is not typically used as the independent variable for plotting the V-I curve.

b) Ic (Collector Current): This is the current flowing through the collector terminal of the IGBT. While Ic is a key parameter for analyzing the IGBT's behavior, it is not typically used as the independent variable for plotting the V-I curve.

c) Vge (Gate-Emitter Voltage): This is the voltage between the gate and emitter terminals of the IGBT. Varying Vge allows us to control the IGBT's switching behavior and also affects its conduction characteristics. Therefore, Vge is the parameter that is most commonly used to plot the static V-I curve of an IGBT.

d) Ig (Gate Current): This is the current flowing into the gate terminal of the IGBT. While Ig is important for understanding the gate drive requirements and switching speed, it is not typically used as the independent variable for plotting the V-I curve.

Conclusion:
In conclusion, when plotting the static V-I curve of an IGBT, the parameter used as the independent variable is the voltage between the gate and emitter terminals (Vge). This parameter allows us to study the IGBT's conduction characteristics and its response to changes in gate voltage.