Electrical Engineering (EE) Exam > Electrical Engineering (EE) Questions > The MOSFET transconductance parameter is the ...
Start Learning for Free
The MOSFET transconductance parameter is the product of
- a)Process transconductance and inverse of aspect ratio
- b)Inverse of Process transconductance and aspect ratio
- c)Inverse of Process transconductance and inverse of aspect ratio
- d)Process transconductance and aspect ratio
Correct answer is option 'D'. Can you explain this answer?
| FREE This question is part of | Download PDF Attempt this Test |
Verified Answer
The MOSFET transconductance parameter is the product ofa)Process trans...
This statement only satisfies the mathematical expression.
Most Upvoted Answer
The MOSFET transconductance parameter is the product ofa)Process trans...
The MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a fundamental device used in modern electronics. It is widely used in various applications, including amplifiers, switches, and digital circuits. The transconductance parameter of a MOSFET is an important characteristic that determines its performance and behavior.
The transconductance parameter, often denoted as gm, represents the relationship between the input voltage and the output current of the MOSFET. It is defined as the ratio of the change in the output current to the change in the input voltage when the drain-source voltage is constant. In other words, it measures the sensitivity of the MOSFET to changes in the input voltage.
The transconductance parameter of a MOSFET is influenced by various factors, including the process transconductance and the aspect ratio of the device.
1. Process Transconductance:
The process transconductance, denoted as gm0, is a measure of the intrinsic transconductance of the MOSFET. It depends on the physical characteristics of the device, such as the carrier mobility, oxide thickness, and channel length. A higher process transconductance indicates a more efficient MOSFET with better performance.
2. Aspect Ratio:
The aspect ratio of a MOSFET is defined as the ratio of the channel width to the channel length. It determines the size of the conducting channel and affects the overall performance of the device. A larger aspect ratio leads to a larger channel width and a higher transconductance.
The product of the process transconductance and the aspect ratio gives the overall transconductance parameter of the MOSFET. This can be mathematically represented as gm = gm0 * (W/L), where gm is the transconductance parameter, gm0 is the process transconductance, W is the channel width, and L is the channel length.
Therefore, the correct answer is option D, which states that the transconductance parameter is the product of the process transconductance and the aspect ratio.
The transconductance parameter, often denoted as gm, represents the relationship between the input voltage and the output current of the MOSFET. It is defined as the ratio of the change in the output current to the change in the input voltage when the drain-source voltage is constant. In other words, it measures the sensitivity of the MOSFET to changes in the input voltage.
The transconductance parameter of a MOSFET is influenced by various factors, including the process transconductance and the aspect ratio of the device.
1. Process Transconductance:
The process transconductance, denoted as gm0, is a measure of the intrinsic transconductance of the MOSFET. It depends on the physical characteristics of the device, such as the carrier mobility, oxide thickness, and channel length. A higher process transconductance indicates a more efficient MOSFET with better performance.
2. Aspect Ratio:
The aspect ratio of a MOSFET is defined as the ratio of the channel width to the channel length. It determines the size of the conducting channel and affects the overall performance of the device. A larger aspect ratio leads to a larger channel width and a higher transconductance.
The product of the process transconductance and the aspect ratio gives the overall transconductance parameter of the MOSFET. This can be mathematically represented as gm = gm0 * (W/L), where gm is the transconductance parameter, gm0 is the process transconductance, W is the channel width, and L is the channel length.
Therefore, the correct answer is option D, which states that the transconductance parameter is the product of the process transconductance and the aspect ratio.
Free Test
FREE
| Start Free Test |
Community Answer
The MOSFET transconductance parameter is the product ofa)Process trans...
D
Attention Electrical Engineering (EE) Students!
To make sure you are not studying endlessly, EduRev has designed Electrical Engineering (EE) study material, with Structured Courses, Videos, & Test Series. Plus get personalized analysis, doubt solving and improvement plans to achieve a great score in Electrical Engineering (EE).
|
Explore Courses for Electrical Engineering (EE) exam
|
|
Similar Electrical Engineering (EE) Doubts
Top Courses for Electrical Engineering (EE)View all
The MOSFET transconductance parameter is the product ofa)Process transconductance and inverse of aspect ratiob)Inverse of Process transconductance and aspect ratioc)Inverse of Process transconductance and inverse of aspect ratiod)Process transconductance and aspect ratioCorrect answer is option 'D'. Can you explain this answer?
Question Description
The MOSFET transconductance parameter is the product ofa)Process transconductance and inverse of aspect ratiob)Inverse of Process transconductance and aspect ratioc)Inverse of Process transconductance and inverse of aspect ratiod)Process transconductance and aspect ratioCorrect answer is option 'D'. Can you explain this answer? for Electrical Engineering (EE) 2024 is part of Electrical Engineering (EE) preparation. The Question and answers have been prepared according to the Electrical Engineering (EE) exam syllabus. Information about The MOSFET transconductance parameter is the product ofa)Process transconductance and inverse of aspect ratiob)Inverse of Process transconductance and aspect ratioc)Inverse of Process transconductance and inverse of aspect ratiod)Process transconductance and aspect ratioCorrect answer is option 'D'. Can you explain this answer? covers all topics & solutions for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for The MOSFET transconductance parameter is the product ofa)Process transconductance and inverse of aspect ratiob)Inverse of Process transconductance and aspect ratioc)Inverse of Process transconductance and inverse of aspect ratiod)Process transconductance and aspect ratioCorrect answer is option 'D'. Can you explain this answer?.
The MOSFET transconductance parameter is the product ofa)Process transconductance and inverse of aspect ratiob)Inverse of Process transconductance and aspect ratioc)Inverse of Process transconductance and inverse of aspect ratiod)Process transconductance and aspect ratioCorrect answer is option 'D'. Can you explain this answer? for Electrical Engineering (EE) 2024 is part of Electrical Engineering (EE) preparation. The Question and answers have been prepared according to the Electrical Engineering (EE) exam syllabus. Information about The MOSFET transconductance parameter is the product ofa)Process transconductance and inverse of aspect ratiob)Inverse of Process transconductance and aspect ratioc)Inverse of Process transconductance and inverse of aspect ratiod)Process transconductance and aspect ratioCorrect answer is option 'D'. Can you explain this answer? covers all topics & solutions for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for The MOSFET transconductance parameter is the product ofa)Process transconductance and inverse of aspect ratiob)Inverse of Process transconductance and aspect ratioc)Inverse of Process transconductance and inverse of aspect ratiod)Process transconductance and aspect ratioCorrect answer is option 'D'. Can you explain this answer?.
Solutions for The MOSFET transconductance parameter is the product ofa)Process transconductance and inverse of aspect ratiob)Inverse of Process transconductance and aspect ratioc)Inverse of Process transconductance and inverse of aspect ratiod)Process transconductance and aspect ratioCorrect answer is option 'D'. Can you explain this answer? in English & in Hindi are available as part of our courses for Electrical Engineering (EE).
Download more important topics, notes, lectures and mock test series for Electrical Engineering (EE) Exam by signing up for free.
Here you can find the meaning of The MOSFET transconductance parameter is the product ofa)Process transconductance and inverse of aspect ratiob)Inverse of Process transconductance and aspect ratioc)Inverse of Process transconductance and inverse of aspect ratiod)Process transconductance and aspect ratioCorrect answer is option 'D'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of
The MOSFET transconductance parameter is the product ofa)Process transconductance and inverse of aspect ratiob)Inverse of Process transconductance and aspect ratioc)Inverse of Process transconductance and inverse of aspect ratiod)Process transconductance and aspect ratioCorrect answer is option 'D'. Can you explain this answer?, a detailed solution for The MOSFET transconductance parameter is the product ofa)Process transconductance and inverse of aspect ratiob)Inverse of Process transconductance and aspect ratioc)Inverse of Process transconductance and inverse of aspect ratiod)Process transconductance and aspect ratioCorrect answer is option 'D'. Can you explain this answer? has been provided alongside types of The MOSFET transconductance parameter is the product ofa)Process transconductance and inverse of aspect ratiob)Inverse of Process transconductance and aspect ratioc)Inverse of Process transconductance and inverse of aspect ratiod)Process transconductance and aspect ratioCorrect answer is option 'D'. Can you explain this answer? theory, EduRev gives you an
ample number of questions to practice The MOSFET transconductance parameter is the product ofa)Process transconductance and inverse of aspect ratiob)Inverse of Process transconductance and aspect ratioc)Inverse of Process transconductance and inverse of aspect ratiod)Process transconductance and aspect ratioCorrect answer is option 'D'. Can you explain this answer? tests, examples and also practice Electrical Engineering (EE) tests.
|
|
Explore Courses for Electrical Engineering (EE) exam
|
|
Suggested Free Tests
Signup for Free!
Signup to see your scores go up within 7 days! Learn & Practice with 1000+ FREE Notes, Videos & Tests.
|
© EduRev
|
Education Revolution
|
Follow Us
|
Signup to see your scores
go up within 7 days!
Access 1000+ FREE Docs, Videos and Tests
Takes less than 10 seconds to signup