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Which of the following is not true for a Schottky-Barrier Diode (SBD)?
- a)It is formed by bringing metal into contact with a moderately doped n-type semiconductor material.
- b)In the SBD, current is conducted by mainly by minority carriers.
- c)The forward voltage drop of a conducting SBD is lower than that of a pn-junction diode.
- d)SBD are used in the design of a special form of bipolar-transistor logic circuits
Correct answer is option 'D'. Can you explain this answer?
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Which of the following is not true for a Schottky-Barrier Diode (SBD)?...
Current is conducted largely by electrons which are majority current carriers.
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Which of the following is not true for a Schottky-Barrier Diode (SBD)?...
Introduction:
A Schottky Barrier Diode (SBD) is a type of diode that is formed by bringing a metal into contact with a moderately doped n-type semiconductor material. It is named after the German physicist Walter H. Schottky, who first described this barrier formation. SBDs have several unique characteristics compared to traditional pn-junction diodes.
Explanation:
The incorrect statement is option D, which states that SBDs are used in the design of a special form of bipolar-transistor logic circuits. Let's discuss why this statement is not true.
1. Formation:
A Schottky Barrier Diode is formed by bringing a metal (e.g., aluminum, platinum, or gold) into contact with a moderately doped n-type semiconductor material (e.g., silicon). This forms a metal-semiconductor junction, known as a Schottky barrier.
2. Current Conduction:
In a Schottky Barrier Diode, current conduction occurs mainly by minority carriers (electrons in the n-type semiconductor). When a forward bias voltage is applied, electrons from the n-type semiconductor flow into the metal contact, resulting in current flow.
3. Forward Voltage Drop:
The forward voltage drop of a conducting Schottky Barrier Diode is lower than that of a pn-junction diode. This is because there is no depletion region in the SBD, and the forward conduction mechanism is based on thermionic emission rather than minority carrier injection.
4. Application:
Schottky Barrier Diodes find applications in various electronic circuits, including rectifiers, voltage clamps, and analog switches. However, they are not commonly used in the design of bipolar-transistor logic circuits.
5. Bipolar-Transistor Logic Circuits:
Bipolar-transistor logic circuits, such as TTL (Transistor-Transistor Logic) or ECL (Emitter-Coupled Logic), utilize bipolar junction transistors (BJTs) as the main active components. SBDs are not directly involved in the design of these logic circuits.
Conclusion:
In summary, the statement that SBDs are used in the design of a special form of bipolar-transistor logic circuits (option D) is not true. SBDs are formed by bringing metal into contact with a moderately doped n-type semiconductor material, and current conduction occurs mainly by minority carriers. The forward voltage drop of an SBD is lower than that of a pn-junction diode. While SBDs have various applications, they are not commonly used in the design of bipolar-transistor logic circuits.
A Schottky Barrier Diode (SBD) is a type of diode that is formed by bringing a metal into contact with a moderately doped n-type semiconductor material. It is named after the German physicist Walter H. Schottky, who first described this barrier formation. SBDs have several unique characteristics compared to traditional pn-junction diodes.
Explanation:
The incorrect statement is option D, which states that SBDs are used in the design of a special form of bipolar-transistor logic circuits. Let's discuss why this statement is not true.
1. Formation:
A Schottky Barrier Diode is formed by bringing a metal (e.g., aluminum, platinum, or gold) into contact with a moderately doped n-type semiconductor material (e.g., silicon). This forms a metal-semiconductor junction, known as a Schottky barrier.
2. Current Conduction:
In a Schottky Barrier Diode, current conduction occurs mainly by minority carriers (electrons in the n-type semiconductor). When a forward bias voltage is applied, electrons from the n-type semiconductor flow into the metal contact, resulting in current flow.
3. Forward Voltage Drop:
The forward voltage drop of a conducting Schottky Barrier Diode is lower than that of a pn-junction diode. This is because there is no depletion region in the SBD, and the forward conduction mechanism is based on thermionic emission rather than minority carrier injection.
4. Application:
Schottky Barrier Diodes find applications in various electronic circuits, including rectifiers, voltage clamps, and analog switches. However, they are not commonly used in the design of bipolar-transistor logic circuits.
5. Bipolar-Transistor Logic Circuits:
Bipolar-transistor logic circuits, such as TTL (Transistor-Transistor Logic) or ECL (Emitter-Coupled Logic), utilize bipolar junction transistors (BJTs) as the main active components. SBDs are not directly involved in the design of these logic circuits.
Conclusion:
In summary, the statement that SBDs are used in the design of a special form of bipolar-transistor logic circuits (option D) is not true. SBDs are formed by bringing metal into contact with a moderately doped n-type semiconductor material, and current conduction occurs mainly by minority carriers. The forward voltage drop of an SBD is lower than that of a pn-junction diode. While SBDs have various applications, they are not commonly used in the design of bipolar-transistor logic circuits.
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Which of the following is not true for a Schottky-Barrier Diode (SBD)?a)It is formed by bringing metal into contact with a moderately doped n-type semiconductor material.b)In the SBD, current is conducted by mainly by minority carriers.c)The forward voltage drop of a conducting SBD is lower than that of a pn-junction diode.d)SBD are used in the design of a special form of bipolar-transistor logic circuitsCorrect answer is option 'D'. Can you explain this answer?
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Which of the following is not true for a Schottky-Barrier Diode (SBD)?a)It is formed by bringing metal into contact with a moderately doped n-type semiconductor material.b)In the SBD, current is conducted by mainly by minority carriers.c)The forward voltage drop of a conducting SBD is lower than that of a pn-junction diode.d)SBD are used in the design of a special form of bipolar-transistor logic circuitsCorrect answer is option 'D'. Can you explain this answer? for Electrical Engineering (EE) 2024 is part of Electrical Engineering (EE) preparation. The Question and answers have been prepared according to the Electrical Engineering (EE) exam syllabus. Information about Which of the following is not true for a Schottky-Barrier Diode (SBD)?a)It is formed by bringing metal into contact with a moderately doped n-type semiconductor material.b)In the SBD, current is conducted by mainly by minority carriers.c)The forward voltage drop of a conducting SBD is lower than that of a pn-junction diode.d)SBD are used in the design of a special form of bipolar-transistor logic circuitsCorrect answer is option 'D'. Can you explain this answer? covers all topics & solutions for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Which of the following is not true for a Schottky-Barrier Diode (SBD)?a)It is formed by bringing metal into contact with a moderately doped n-type semiconductor material.b)In the SBD, current is conducted by mainly by minority carriers.c)The forward voltage drop of a conducting SBD is lower than that of a pn-junction diode.d)SBD are used in the design of a special form of bipolar-transistor logic circuitsCorrect answer is option 'D'. Can you explain this answer?.
Which of the following is not true for a Schottky-Barrier Diode (SBD)?a)It is formed by bringing metal into contact with a moderately doped n-type semiconductor material.b)In the SBD, current is conducted by mainly by minority carriers.c)The forward voltage drop of a conducting SBD is lower than that of a pn-junction diode.d)SBD are used in the design of a special form of bipolar-transistor logic circuitsCorrect answer is option 'D'. Can you explain this answer? for Electrical Engineering (EE) 2024 is part of Electrical Engineering (EE) preparation. The Question and answers have been prepared according to the Electrical Engineering (EE) exam syllabus. Information about Which of the following is not true for a Schottky-Barrier Diode (SBD)?a)It is formed by bringing metal into contact with a moderately doped n-type semiconductor material.b)In the SBD, current is conducted by mainly by minority carriers.c)The forward voltage drop of a conducting SBD is lower than that of a pn-junction diode.d)SBD are used in the design of a special form of bipolar-transistor logic circuitsCorrect answer is option 'D'. Can you explain this answer? covers all topics & solutions for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Which of the following is not true for a Schottky-Barrier Diode (SBD)?a)It is formed by bringing metal into contact with a moderately doped n-type semiconductor material.b)In the SBD, current is conducted by mainly by minority carriers.c)The forward voltage drop of a conducting SBD is lower than that of a pn-junction diode.d)SBD are used in the design of a special form of bipolar-transistor logic circuitsCorrect answer is option 'D'. Can you explain this answer?.
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