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Consider a bar of silicon having carrier concentration n0=1015cm-3and ni=1010cm-3. Assume the excess carrier concentrations to be n=1013cm-3, calculate the quasi-fermi energy level at T=300K?a)0.2982 eVb)0.2984 eVc)0.5971 eVd)1EvCorrect answer is option 'B'. Can you explain this answer? for Electrical Engineering (EE) 2024 is part of Electrical Engineering (EE) preparation. The Question and answers have been prepared
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Consider a bar of silicon having carrier concentration n0=1015cm-3and ni=1010cm-3. Assume the excess carrier concentrations to be n=1013cm-3, calculate the quasi-fermi energy level at T=300K?a)0.2982 eVb)0.2984 eVc)0.5971 eVd)1EvCorrect answer is option 'B'. Can you explain this answer?, a detailed solution for Consider a bar of silicon having carrier concentration n0=1015cm-3and ni=1010cm-3. Assume the excess carrier concentrations to be n=1013cm-3, calculate the quasi-fermi energy level at T=300K?a)0.2982 eVb)0.2984 eVc)0.5971 eVd)1EvCorrect answer is option 'B'. Can you explain this answer? has been provided alongside types of Consider a bar of silicon having carrier concentration n0=1015cm-3and ni=1010cm-3. Assume the excess carrier concentrations to be n=1013cm-3, calculate the quasi-fermi energy level at T=300K?a)0.2982 eVb)0.2984 eVc)0.5971 eVd)1EvCorrect answer is option 'B'. Can you explain this answer? theory, EduRev gives you an
ample number of questions to practice Consider a bar of silicon having carrier concentration n0=1015cm-3and ni=1010cm-3. Assume the excess carrier concentrations to be n=1013cm-3, calculate the quasi-fermi energy level at T=300K?a)0.2982 eVb)0.2984 eVc)0.5971 eVd)1EvCorrect answer is option 'B'. Can you explain this answer? tests, examples and also practice Electrical Engineering (EE) tests.