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Consider a silicon wafer having Nc=2.8*1019cm-3 and the Fermi energy is .25eV below the conduction band. Calculate the equilibrium concentrations of electrons at T=300K?
- a)18*1016cm-3
- b)1.8*1016cm-3
- c)1.8*1014cm-3
- d)180*1016cm-3
Correct answer is option 'A'. Can you explain this answer?
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Verified Answer
Consider a silicon wafer having Nc=2.8*1019cm-3and the Fermi energy is...
n0=Nc*exp(-Eg/KT)=2.8*1019*exp(-0.25/0.0259)
=18*1016cm-3.
=18*1016cm-3.
Most Upvoted Answer
Consider a silicon wafer having Nc=2.8*1019cm-3and the Fermi energy is...
Given information:
Nc = 2.8 * 10^19 cm^-3
Fermi energy (Ef) = -0.25 eV (below conduction band)
Temperature (T) = 300 K
To find:
Equilibrium concentration of electrons (n)
Solution:
The relationship between electron concentration (n) and Fermi energy (Ef) is given by:
n = Nc * exp[(Ef - Ec) / (k * T)]
Where,
Ec = energy of the conduction band
k = Boltzmann's constant = 8.62 * 10^-5 eV/K
From the given information, we can calculate the energy of the conduction band as:
Ec = Ef + 0.25 eV
= 0 eV + 0.25 eV
= 0.25 eV
Substituting the values in the equation, we get:
n = Nc * exp[(Ef - Ec) / (k * T)]
= 2.8 * 10^19 cm^-3 * exp[(-0.25 eV - 0.25 eV) / (8.62 * 10^-5 eV/K * 300 K)]
= 1.8 * 10^16 cm^-3
Therefore, the equilibrium concentration of electrons at T=300K is 18 * 10^15 cm^-3.
Hence, the correct option is (a) 18 * 10^16 cm^-3.
Nc = 2.8 * 10^19 cm^-3
Fermi energy (Ef) = -0.25 eV (below conduction band)
Temperature (T) = 300 K
To find:
Equilibrium concentration of electrons (n)
Solution:
The relationship between electron concentration (n) and Fermi energy (Ef) is given by:
n = Nc * exp[(Ef - Ec) / (k * T)]
Where,
Ec = energy of the conduction band
k = Boltzmann's constant = 8.62 * 10^-5 eV/K
From the given information, we can calculate the energy of the conduction band as:
Ec = Ef + 0.25 eV
= 0 eV + 0.25 eV
= 0.25 eV
Substituting the values in the equation, we get:
n = Nc * exp[(Ef - Ec) / (k * T)]
= 2.8 * 10^19 cm^-3 * exp[(-0.25 eV - 0.25 eV) / (8.62 * 10^-5 eV/K * 300 K)]
= 1.8 * 10^16 cm^-3
Therefore, the equilibrium concentration of electrons at T=300K is 18 * 10^15 cm^-3.
Hence, the correct option is (a) 18 * 10^16 cm^-3.
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Consider a silicon wafer having Nc=2.8*1019cm-3and the Fermi energy is...
Pure germanium has intrinsic carrier concentration is 2.5×10¹³ cm³ doped by accepter indium atoms with 4x10 cm³. Find the conductivity before and after doping, if the electrons and holes mobility's are 3800 cm'v's¹, 1800 cm'v's' respectively.
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Consider a silicon wafer having Nc=2.8*1019cm-3and the Fermi energy is .25eV below the conduction band. Calculate the equilibrium concentrations of electrons at T=300K?a)18*1016cm-3b)1.8*1016cm-3c)1.8*1014cm-3d)180*1016cm-3Correct answer is option 'A'. Can you explain this answer?
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Consider a silicon wafer having Nc=2.8*1019cm-3and the Fermi energy is .25eV below the conduction band. Calculate the equilibrium concentrations of electrons at T=300K?a)18*1016cm-3b)1.8*1016cm-3c)1.8*1014cm-3d)180*1016cm-3Correct answer is option 'A'. Can you explain this answer? for Electrical Engineering (EE) 2024 is part of Electrical Engineering (EE) preparation. The Question and answers have been prepared according to the Electrical Engineering (EE) exam syllabus. Information about Consider a silicon wafer having Nc=2.8*1019cm-3and the Fermi energy is .25eV below the conduction band. Calculate the equilibrium concentrations of electrons at T=300K?a)18*1016cm-3b)1.8*1016cm-3c)1.8*1014cm-3d)180*1016cm-3Correct answer is option 'A'. Can you explain this answer? covers all topics & solutions for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider a silicon wafer having Nc=2.8*1019cm-3and the Fermi energy is .25eV below the conduction band. Calculate the equilibrium concentrations of electrons at T=300K?a)18*1016cm-3b)1.8*1016cm-3c)1.8*1014cm-3d)180*1016cm-3Correct answer is option 'A'. Can you explain this answer?.
Consider a silicon wafer having Nc=2.8*1019cm-3and the Fermi energy is .25eV below the conduction band. Calculate the equilibrium concentrations of electrons at T=300K?a)18*1016cm-3b)1.8*1016cm-3c)1.8*1014cm-3d)180*1016cm-3Correct answer is option 'A'. Can you explain this answer? for Electrical Engineering (EE) 2024 is part of Electrical Engineering (EE) preparation. The Question and answers have been prepared according to the Electrical Engineering (EE) exam syllabus. Information about Consider a silicon wafer having Nc=2.8*1019cm-3and the Fermi energy is .25eV below the conduction band. Calculate the equilibrium concentrations of electrons at T=300K?a)18*1016cm-3b)1.8*1016cm-3c)1.8*1014cm-3d)180*1016cm-3Correct answer is option 'A'. Can you explain this answer? covers all topics & solutions for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider a silicon wafer having Nc=2.8*1019cm-3and the Fermi energy is .25eV below the conduction band. Calculate the equilibrium concentrations of electrons at T=300K?a)18*1016cm-3b)1.8*1016cm-3c)1.8*1014cm-3d)180*1016cm-3Correct answer is option 'A'. Can you explain this answer?.
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