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At 300k, for a diode current of 2 mA, a certain germanium diode requires a forward bias of 0.1435V, where as a certain Silicon diode requires a forward bias of 0.71 BV. Then the closest approximation of the ratio of reverse saturation current in germanium diode to that of silicon diode is
- a)1
- b)2x103
- c)4 x 103
- d)cannot specify
Correct answer is option 'C'. Can you explain this answer?
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At 300k, for a diode current of 2 mA, a certain germanium diode requir...
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At 300k, for a diode current of 2 mA, a certain germanium diode requir...
Given values:
- For germanium diode: Vf = 0.1435V, If = 2mA, and n = 1
- For silicon diode: Vf = 0.71V, If = 2mA, and n = 1
We need to find the ratio of reverse saturation current in germanium diode to that of silicon diode.
Calculation:
1. Reverse saturation current in a diode is given by the equation:
Is = If / (e^(Vf / (n * Vt)) - 1)
where Vt is the thermal voltage, which is approximately 26 mV at room temperature.
2. For germanium diode:
Is(Ge) = 2mA / (e^(0.1435V / (1 * 26mV)) - 1) = 9.19nA
3. For silicon diode:
Is(Si) = 2mA / (e^(0.71V / (1 * 26mV)) - 1) = 1.1pA
4. Ratio of reverse saturation current:
Is(Ge) / Is(Si) = (9.19nA) / (1.1pA) = 8.35 x 10^3 ≈ 4 x 10^3
Therefore, the closest approximation of the ratio of reverse saturation current in germanium diode to that of silicon diode is 4 x 10^3, which is option (c).
- For germanium diode: Vf = 0.1435V, If = 2mA, and n = 1
- For silicon diode: Vf = 0.71V, If = 2mA, and n = 1
We need to find the ratio of reverse saturation current in germanium diode to that of silicon diode.
Calculation:
1. Reverse saturation current in a diode is given by the equation:
Is = If / (e^(Vf / (n * Vt)) - 1)
where Vt is the thermal voltage, which is approximately 26 mV at room temperature.
2. For germanium diode:
Is(Ge) = 2mA / (e^(0.1435V / (1 * 26mV)) - 1) = 9.19nA
3. For silicon diode:
Is(Si) = 2mA / (e^(0.71V / (1 * 26mV)) - 1) = 1.1pA
4. Ratio of reverse saturation current:
Is(Ge) / Is(Si) = (9.19nA) / (1.1pA) = 8.35 x 10^3 ≈ 4 x 10^3
Therefore, the closest approximation of the ratio of reverse saturation current in germanium diode to that of silicon diode is 4 x 10^3, which is option (c).
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At 300k, for a diode current of 2 mA, a certain germanium diode requires a forward bias of 0.1435V, where as a certain Silicon diode requires a forward bias of 0.71 BV. Then the closest approximation of the ratio of reverse saturation current in germanium diode to that of silicon diode isa)1 b)2x103c)4 x 103 d)cannot specifyCorrect answer is option 'C'. Can you explain this answer?
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At 300k, for a diode current of 2 mA, a certain germanium diode requires a forward bias of 0.1435V, where as a certain Silicon diode requires a forward bias of 0.71 BV. Then the closest approximation of the ratio of reverse saturation current in germanium diode to that of silicon diode isa)1 b)2x103c)4 x 103 d)cannot specifyCorrect answer is option 'C'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about At 300k, for a diode current of 2 mA, a certain germanium diode requires a forward bias of 0.1435V, where as a certain Silicon diode requires a forward bias of 0.71 BV. Then the closest approximation of the ratio of reverse saturation current in germanium diode to that of silicon diode isa)1 b)2x103c)4 x 103 d)cannot specifyCorrect answer is option 'C'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for At 300k, for a diode current of 2 mA, a certain germanium diode requires a forward bias of 0.1435V, where as a certain Silicon diode requires a forward bias of 0.71 BV. Then the closest approximation of the ratio of reverse saturation current in germanium diode to that of silicon diode isa)1 b)2x103c)4 x 103 d)cannot specifyCorrect answer is option 'C'. Can you explain this answer?.
At 300k, for a diode current of 2 mA, a certain germanium diode requires a forward bias of 0.1435V, where as a certain Silicon diode requires a forward bias of 0.71 BV. Then the closest approximation of the ratio of reverse saturation current in germanium diode to that of silicon diode isa)1 b)2x103c)4 x 103 d)cannot specifyCorrect answer is option 'C'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about At 300k, for a diode current of 2 mA, a certain germanium diode requires a forward bias of 0.1435V, where as a certain Silicon diode requires a forward bias of 0.71 BV. Then the closest approximation of the ratio of reverse saturation current in germanium diode to that of silicon diode isa)1 b)2x103c)4 x 103 d)cannot specifyCorrect answer is option 'C'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for At 300k, for a diode current of 2 mA, a certain germanium diode requires a forward bias of 0.1435V, where as a certain Silicon diode requires a forward bias of 0.71 BV. Then the closest approximation of the ratio of reverse saturation current in germanium diode to that of silicon diode isa)1 b)2x103c)4 x 103 d)cannot specifyCorrect answer is option 'C'. Can you explain this answer?.
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