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The reverse saturation current in a Silicon Diode is _____ than that of Germanium Diode   A. Equal B. Higher C. Lower D. Depends on temperature?
Verified Answer
The reverse saturation current in a Silicon Diode is _____ than that o...
b) higher
Energy gap between conduction band and valance band in case of germanium is 0.67eV but in case of silicon it is 1.1eV.
As according to above discussion we can conclude that the energy required for a electron that is in valance band for germanium is lesser than silicon for jump into conduction band. So in case of germanium more number of electron present in conduction band and hence More number of holes present in valance band.
And as we know reverse saturation current produces due to holes so more the number of holes in case of germanium in its valance band and more the reverse saturation current than silicon.
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The reverse saturation current in a Silicon Diode is _____ than that o...
The reverse saturation current in a Silicon Diode is _____ than that of Germanium Diode

- A. Equal
- B. Higher
- C. Lower
- D. Depends on temperature?

Explanation:
Reverse saturation current refers to the small current that flows in the reverse direction when a diode is under reverse bias. The reverse saturation current in a Silicon Diode is **lower** than that of a Germanium Diode.

**Reasons:**

**Bandgap Energy:**
- Silicon has a higher bandgap energy compared to Germanium. This higher bandgap energy in Silicon results in a lower intrinsic carrier concentration, leading to a lower reverse saturation current.

**Temperature Dependency:**
- The reverse saturation current in both Silicon and Germanium diodes is temperature-dependent. However, Silicon diodes exhibit a lower temperature coefficient of reverse saturation current compared to Germanium diodes, making Silicon diodes more stable over a wide temperature range.

**Material Properties:**
- The material properties of Silicon, such as its higher melting point, greater thermal conductivity, and better mechanical strength, contribute to a lower reverse saturation current compared to Germanium diodes.

In conclusion, the reverse saturation current in a Silicon Diode is lower than that of a Germanium Diode due to factors such as bandgap energy, temperature dependency, and material properties.
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The reverse saturation current in a Silicon Diode is _____ than that of Germanium Diode A. Equal B. Higher C. Lower D. Depends on temperature?
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