The reverse saturation current in a Silicon Diode is _____ than that of Germanium Diode

- A. Equal
- B. Higher
- C. Lower
- D. Depends on temperature?

Explanation:
Reverse saturation current refers to the small current that flows in the reverse direction when a diode is under reverse bias. The reverse saturation current in a Silicon Diode is **lower** than that of a Germanium Diode.

**Reasons:**

**Bandgap Energy:**
- Silicon has a higher bandgap energy compared to Germanium. This higher bandgap energy in Silicon results in a lower intrinsic carrier concentration, leading to a lower reverse saturation current.

**Temperature Dependency:**
- The reverse saturation current in both Silicon and Germanium diodes is temperature-dependent. However, Silicon diodes exhibit a lower temperature coefficient of reverse saturation current compared to Germanium diodes, making Silicon diodes more stable over a wide temperature range.

**Material Properties:**
- The material properties of Silicon, such as its higher melting point, greater thermal conductivity, and better mechanical strength, contribute to a lower reverse saturation current compared to Germanium diodes.

In conclusion, the reverse saturation current in a Silicon Diode is lower than that of a Germanium Diode due to factors such as bandgap energy, temperature dependency, and material properties.