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For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?
- a)All of the four are majority carrier devices.
- b)All the four are minority carrier devices
- c)IGBT and MOSFET are majority carrier devices, whereas Diode and Thyristor are minority carrier devices.
- d)MOSFET is majority carrier device, whereas IGBT, Diode, Thyristor are minority carrier devices.
Correct answer is option 'D'. Can you explain this answer?
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For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor,...
MOSFET → Majority carrier device (NMOS, PMOS)
Diode→ both majority & minority carrier device
Transister → Npn, pnp
IGBT → input is MOSFET, Output is BJT
Most Upvoted Answer
For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor,...
Answer:
To determine which statement is true regarding the power semiconductor devices IGBT, MOSFET, Diode, and Thyristor, we need to understand the characteristics of these devices.
IGBT (Insulated Gate Bipolar Transistor):
- IGBT is a three-terminal device that combines the high input impedance of a MOSFET with the low on-state power loss of a bipolar junction transistor (BJT).
- It consists of a PNP transistor and an NPN transistor connected in parallel.
- IGBT operates as a majority carrier device, meaning it primarily conducts current through majority carriers (electrons for N-channel IGBT and holes for P-channel IGBT).
MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor):
- MOSFET is a three-terminal device that operates as a voltage-controlled switch or amplifier.
- It consists of a gate, source, and drain terminals.
- MOSFET operates as a majority carrier device, conducting current through majority carriers (electrons for N-channel MOSFET and holes for P-channel MOSFET).
Diode:
- A diode is a two-terminal device that conducts current in one direction and blocks current in the opposite direction.
- Diodes operate as minority carrier devices, meaning they conduct current through minority carriers (electrons for P-N junction diode and holes for P-N junction diode).
Thyristor:
- Thyristor is a four-layer, three-junction, three-terminal semiconductor device.
- It operates as a switch, conducting current only when triggered by a gate signal.
- Thyristors, like diodes, operate as minority carrier devices.
Based on these characteristics, the correct statement is option 'D':
- MOSFET is a majority carrier device.
- IGBT, Diode, and Thyristor are minority carrier devices.
To determine which statement is true regarding the power semiconductor devices IGBT, MOSFET, Diode, and Thyristor, we need to understand the characteristics of these devices.
IGBT (Insulated Gate Bipolar Transistor):
- IGBT is a three-terminal device that combines the high input impedance of a MOSFET with the low on-state power loss of a bipolar junction transistor (BJT).
- It consists of a PNP transistor and an NPN transistor connected in parallel.
- IGBT operates as a majority carrier device, meaning it primarily conducts current through majority carriers (electrons for N-channel IGBT and holes for P-channel IGBT).
MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor):
- MOSFET is a three-terminal device that operates as a voltage-controlled switch or amplifier.
- It consists of a gate, source, and drain terminals.
- MOSFET operates as a majority carrier device, conducting current through majority carriers (electrons for N-channel MOSFET and holes for P-channel MOSFET).
Diode:
- A diode is a two-terminal device that conducts current in one direction and blocks current in the opposite direction.
- Diodes operate as minority carrier devices, meaning they conduct current through minority carriers (electrons for P-N junction diode and holes for P-N junction diode).
Thyristor:
- Thyristor is a four-layer, three-junction, three-terminal semiconductor device.
- It operates as a switch, conducting current only when triggered by a gate signal.
- Thyristors, like diodes, operate as minority carrier devices.
Based on these characteristics, the correct statement is option 'D':
- MOSFET is a majority carrier device.
- IGBT, Diode, and Thyristor are minority carrier devices.
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For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?a)All of the four are majority carrier devices.b)All the four are minority carrier devicesc)IGBT and MOSFET are majority carrier devices, whereas Diode and Thyristor are minority carrier devices.d)MOSFET is majority carrier device, whereas IGBT, Diode, Thyristor are minority carrier devices.Correct answer is option 'D'. Can you explain this answer?
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For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?a)All of the four are majority carrier devices.b)All the four are minority carrier devicesc)IGBT and MOSFET are majority carrier devices, whereas Diode and Thyristor are minority carrier devices.d)MOSFET is majority carrier device, whereas IGBT, Diode, Thyristor are minority carrier devices.Correct answer is option 'D'. Can you explain this answer? for Electrical Engineering (EE) 2024 is part of Electrical Engineering (EE) preparation. The Question and answers have been prepared according to the Electrical Engineering (EE) exam syllabus. Information about For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?a)All of the four are majority carrier devices.b)All the four are minority carrier devicesc)IGBT and MOSFET are majority carrier devices, whereas Diode and Thyristor are minority carrier devices.d)MOSFET is majority carrier device, whereas IGBT, Diode, Thyristor are minority carrier devices.Correct answer is option 'D'. Can you explain this answer? covers all topics & solutions for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?a)All of the four are majority carrier devices.b)All the four are minority carrier devicesc)IGBT and MOSFET are majority carrier devices, whereas Diode and Thyristor are minority carrier devices.d)MOSFET is majority carrier device, whereas IGBT, Diode, Thyristor are minority carrier devices.Correct answer is option 'D'. Can you explain this answer?.
For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?a)All of the four are majority carrier devices.b)All the four are minority carrier devicesc)IGBT and MOSFET are majority carrier devices, whereas Diode and Thyristor are minority carrier devices.d)MOSFET is majority carrier device, whereas IGBT, Diode, Thyristor are minority carrier devices.Correct answer is option 'D'. Can you explain this answer? for Electrical Engineering (EE) 2024 is part of Electrical Engineering (EE) preparation. The Question and answers have been prepared according to the Electrical Engineering (EE) exam syllabus. Information about For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?a)All of the four are majority carrier devices.b)All the four are minority carrier devicesc)IGBT and MOSFET are majority carrier devices, whereas Diode and Thyristor are minority carrier devices.d)MOSFET is majority carrier device, whereas IGBT, Diode, Thyristor are minority carrier devices.Correct answer is option 'D'. Can you explain this answer? covers all topics & solutions for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?a)All of the four are majority carrier devices.b)All the four are minority carrier devicesc)IGBT and MOSFET are majority carrier devices, whereas Diode and Thyristor are minority carrier devices.d)MOSFET is majority carrier device, whereas IGBT, Diode, Thyristor are minority carrier devices.Correct answer is option 'D'. Can you explain this answer?.
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ample number of questions to practice For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?a)All of the four are majority carrier devices.b)All the four are minority carrier devicesc)IGBT and MOSFET are majority carrier devices, whereas Diode and Thyristor are minority carrier devices.d)MOSFET is majority carrier device, whereas IGBT, Diode, Thyristor are minority carrier devices.Correct answer is option 'D'. Can you explain this answer? tests, examples and also practice Electrical Engineering (EE) tests.
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