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For a particular intensity of incident light on a silicon pn junction solar cell, the photocurrent density (JL) is 2.5 mA/cm2 and the open-circuit voltage (Voc) is 0.451 V. consider thermal voltage (VT) to be 25mV. If the intensity of the incident light is increased by 20 times, assuming that the temperature remains unchanged. Voc (in volts) will be ______.Correct answer is '0.51 to 0.54'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about For a particular intensity of incident light on a silicon pn junction solar cell, the photocurrent density (JL) is 2.5 mA/cm2 and the open-circuit voltage (Voc) is 0.451 V. consider thermal voltage (VT) to be 25mV. If the intensity of the incident light is increased by 20 times, assuming that the temperature remains unchanged. Voc (in volts) will be ______.Correct answer is '0.51 to 0.54'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for For a particular intensity of incident light on a silicon pn junction solar cell, the photocurrent density (JL) is 2.5 mA/cm2 and the open-circuit voltage (Voc) is 0.451 V. consider thermal voltage (VT) to be 25mV. If the intensity of the incident light is increased by 20 times, assuming that the temperature remains unchanged. Voc (in volts) will be ______.Correct answer is '0.51 to 0.54'. Can you explain this answer?.

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