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For a particular intensity of incident light on a silicon p-n junction solar cell, the photocurrent density (JL) is 2.5 mA/cm2 and the open-circuit voltage (Voc) is 0.451 V. Consider thermal voltage (VT) to be 25 mV. If the intensity of the incident light is increased by 20 times, assuming that the temperature remains unchanged, Voc (in volts) will be ___________.(Take the ideality factor, η = 2 for Silicon)Correct answer is between '0.51,0.62'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about For a particular intensity of incident light on a silicon p-n junction solar cell, the photocurrent density (JL) is 2.5 mA/cm2 and the open-circuit voltage (Voc) is 0.451 V. Consider thermal voltage (VT) to be 25 mV. If the intensity of the incident light is increased by 20 times, assuming that the temperature remains unchanged, Voc (in volts) will be ___________.(Take the ideality factor, η = 2 for Silicon)Correct answer is between '0.51,0.62'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for For a particular intensity of incident light on a silicon p-n junction solar cell, the photocurrent density (JL) is 2.5 mA/cm2 and the open-circuit voltage (Voc) is 0.451 V. Consider thermal voltage (VT) to be 25 mV. If the intensity of the incident light is increased by 20 times, assuming that the temperature remains unchanged, Voc (in volts) will be ___________.(Take the ideality factor, η = 2 for Silicon)Correct answer is between '0.51,0.62'. Can you explain this answer?.

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Here you can find the meaning of For a particular intensity of incident light on a silicon p-n junction solar cell, the photocurrent density (JL) is 2.5 mA/cm2 and the open-circuit voltage (Voc) is 0.451 V. Consider thermal voltage (VT) to be 25 mV. If the intensity of the incident light is increased by 20 times, assuming that the temperature remains unchanged, Voc (in volts) will be ___________.(Take the ideality factor, η = 2 for Silicon)Correct answer is between '0.51,0.62'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of For a particular intensity of incident light on a silicon p-n junction solar cell, the photocurrent density (JL) is 2.5 mA/cm2 and the open-circuit voltage (Voc) is 0.451 V. Consider thermal voltage (VT) to be 25 mV. If the intensity of the incident light is increased by 20 times, assuming that the temperature remains unchanged, Voc (in volts) will be ___________.(Take the ideality factor, η = 2 for Silicon)Correct answer is between '0.51,0.62'. Can you explain this answer?, a detailed solution for For a particular intensity of incident light on a silicon p-n junction solar cell, the photocurrent density (JL) is 2.5 mA/cm2 and the open-circuit voltage (Voc) is 0.451 V. Consider thermal voltage (VT) to be 25 mV. If the intensity of the incident light is increased by 20 times, assuming that the temperature remains unchanged, Voc (in volts) will be ___________.(Take the ideality factor, η = 2 for Silicon)Correct answer is between '0.51,0.62'. Can you explain this answer? has been provided alongside types of For a particular intensity of incident light on a silicon p-n junction solar cell, the photocurrent density (JL) is 2.5 mA/cm2 and the open-circuit voltage (Voc) is 0.451 V. Consider thermal voltage (VT) to be 25 mV. If the intensity of the incident light is increased by 20 times, assuming that the temperature remains unchanged, Voc (in volts) will be ___________.(Take the ideality factor, η = 2 for Silicon)Correct answer is between '0.51,0.62'. Can you explain this answer? theory, EduRev gives you an ample number of questions to practice For a particular intensity of incident light on a silicon p-n junction solar cell, the photocurrent density (JL) is 2.5 mA/cm2 and the open-circuit voltage (Voc) is 0.451 V. Consider thermal voltage (VT) to be 25 mV. If the intensity of the incident light is increased by 20 times, assuming that the temperature remains unchanged, Voc (in volts) will be ___________.(Take the ideality factor, η = 2 for Silicon)Correct answer is between '0.51,0.62'. Can you explain this answer? tests, examples and also practice Electronics and Communication Engineering (ECE) tests.