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The mobility of free electrons and holes in pure germanium are 3800 and 1800 cm2/V-s respectively. The corresponding values for pure silicon are 1300 and 500 cm2/V-s, respectively. Assuming ni= 2.5 x 1013 cm-3 for germanium and ni=1.5x 1010 cm-3 for silicon at room temperature, the values of intrinsic conductivity for germanium and silicon are respectively given bya)4.32 x 10-6 S/cm and 0.0224 S/cmb)4.32 x 10-6 S/cm and 0.325 S/cmc)0.0224 S/cm and 4.32 x 10-6S/cmd)0.325 S/cm and 4.32 x 10-6 S/cmCorrect answer is option 'C'. Can you explain this answer? for Electrical Engineering (EE) 2024 is part of Electrical Engineering (EE) preparation. The Question and answers have been prepared according to the Electrical Engineering (EE) exam syllabus. Information about The mobility of free electrons and holes in pure germanium are 3800 and 1800 cm2/V-s respectively. The corresponding values for pure silicon are 1300 and 500 cm2/V-s, respectively. Assuming ni= 2.5 x 1013 cm-3 for germanium and ni=1.5x 1010 cm-3 for silicon at room temperature, the values of intrinsic conductivity for germanium and silicon are respectively given bya)4.32 x 10-6 S/cm and 0.0224 S/cmb)4.32 x 10-6 S/cm and 0.325 S/cmc)0.0224 S/cm and 4.32 x 10-6S/cmd)0.325 S/cm and 4.32 x 10-6 S/cmCorrect answer is option 'C'. Can you explain this answer? covers all topics & solutions for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for The mobility of free electrons and holes in pure germanium are 3800 and 1800 cm2/V-s respectively. The corresponding values for pure silicon are 1300 and 500 cm2/V-s, respectively. Assuming ni= 2.5 x 1013 cm-3 for germanium and ni=1.5x 1010 cm-3 for silicon at room temperature, the values of intrinsic conductivity for germanium and silicon are respectively given bya)4.32 x 10-6 S/cm and 0.0224 S/cmb)4.32 x 10-6 S/cm and 0.325 S/cmc)0.0224 S/cm and 4.32 x 10-6S/cmd)0.325 S/cm and 4.32 x 10-6 S/cmCorrect answer is option 'C'. Can you explain this answer?.

Solutions for The mobility of free electrons and holes in pure germanium are 3800 and 1800 cm2/V-s respectively. The corresponding values for pure silicon are 1300 and 500 cm2/V-s, respectively. Assuming ni= 2.5 x 1013 cm-3 for germanium and ni=1.5x 1010 cm-3 for silicon at room temperature, the values of intrinsic conductivity for germanium and silicon are respectively given bya)4.32 x 10-6 S/cm and 0.0224 S/cmb)4.32 x 10-6 S/cm and 0.325 S/cmc)0.0224 S/cm and 4.32 x 10-6S/cmd)0.325 S/cm and 4.32 x 10-6 S/cmCorrect answer is option 'C'. Can you explain this answer? in English & in Hindi are available as part of our courses for Electrical Engineering (EE). Download more important topics, notes, lectures and mock test series for Electrical Engineering (EE) Exam by signing up for free.

Here you can find the meaning of The mobility of free electrons and holes in pure germanium are 3800 and 1800 cm2/V-s respectively. The corresponding values for pure silicon are 1300 and 500 cm2/V-s, respectively. Assuming ni= 2.5 x 1013 cm-3 for germanium and ni=1.5x 1010 cm-3 for silicon at room temperature, the values of intrinsic conductivity for germanium and silicon are respectively given bya)4.32 x 10-6 S/cm and 0.0224 S/cmb)4.32 x 10-6 S/cm and 0.325 S/cmc)0.0224 S/cm and 4.32 x 10-6S/cmd)0.325 S/cm and 4.32 x 10-6 S/cmCorrect answer is option 'C'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of The mobility of free electrons and holes in pure germanium are 3800 and 1800 cm2/V-s respectively. The corresponding values for pure silicon are 1300 and 500 cm2/V-s, respectively. Assuming ni= 2.5 x 1013 cm-3 for germanium and ni=1.5x 1010 cm-3 for silicon at room temperature, the values of intrinsic conductivity for germanium and silicon are respectively given bya)4.32 x 10-6 S/cm and 0.0224 S/cmb)4.32 x 10-6 S/cm and 0.325 S/cmc)0.0224 S/cm and 4.32 x 10-6S/cmd)0.325 S/cm and 4.32 x 10-6 S/cmCorrect answer is option 'C'. Can you explain this answer?, a detailed solution for The mobility of free electrons and holes in pure germanium are 3800 and 1800 cm2/V-s respectively. The corresponding values for pure silicon are 1300 and 500 cm2/V-s, respectively. Assuming ni= 2.5 x 1013 cm-3 for germanium and ni=1.5x 1010 cm-3 for silicon at room temperature, the values of intrinsic conductivity for germanium and silicon are respectively given bya)4.32 x 10-6 S/cm and 0.0224 S/cmb)4.32 x 10-6 S/cm and 0.325 S/cmc)0.0224 S/cm and 4.32 x 10-6S/cmd)0.325 S/cm and 4.32 x 10-6 S/cmCorrect answer is option 'C'. Can you explain this answer? has been provided alongside types of The mobility of free electrons and holes in pure germanium are 3800 and 1800 cm2/V-s respectively. The corresponding values for pure silicon are 1300 and 500 cm2/V-s, respectively. Assuming ni= 2.5 x 1013 cm-3 for germanium and ni=1.5x 1010 cm-3 for silicon at room temperature, the values of intrinsic conductivity for germanium and silicon are respectively given bya)4.32 x 10-6 S/cm and 0.0224 S/cmb)4.32 x 10-6 S/cm and 0.325 S/cmc)0.0224 S/cm and 4.32 x 10-6S/cmd)0.325 S/cm and 4.32 x 10-6 S/cmCorrect answer is option 'C'. Can you explain this answer? theory, EduRev gives you an ample number of questions to practice The mobility of free electrons and holes in pure germanium are 3800 and 1800 cm2/V-s respectively. The corresponding values for pure silicon are 1300 and 500 cm2/V-s, respectively. Assuming ni= 2.5 x 1013 cm-3 for germanium and ni=1.5x 1010 cm-3 for silicon at room temperature, the values of intrinsic conductivity for germanium and silicon are respectively given bya)4.32 x 10-6 S/cm and 0.0224 S/cmb)4.32 x 10-6 S/cm and 0.325 S/cmc)0.0224 S/cm and 4.32 x 10-6S/cmd)0.325 S/cm and 4.32 x 10-6 S/cmCorrect answer is option 'C'. Can you explain this answer? tests, examples and also practice Electrical Engineering (EE) tests.