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The forward current gain (α) of a bipolar transistor can be increased by
1. reducing the recombination lifetime in the emitter
2. increasing the emitter doping density.
3. increasing the base doping density.
4. reducing the base width.
Select the correct code from the given options,
1. reducing the recombination lifetime in the emitter
2. increasing the emitter doping density.
3. increasing the base doping density.
4. reducing the base width.
Select the correct code from the given options,
- a)2 and 3 only
- b)2 and 4 only
- c)1, 2 and 4 only
- d)4 only
Correct answer is option 'B'. Can you explain this answer?
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Verified Answer
The forward current gain (α) of a bipolar transistor can be incr...
• When emitter is heavily doped, more majority carriers will reach into base due to which lC will increase and hence α increases.
• Due to early effect, base width is reduced as a result of which IC is slightly increased. Hence, α of the transistor is increased.
Hence, 2 and 4 are correct.
• Due to early effect, base width is reduced as a result of which IC is slightly increased. Hence, α of the transistor is increased.
Hence, 2 and 4 are correct.
Most Upvoted Answer
The forward current gain (α) of a bipolar transistor can be incr...
Also known as the current transfer ratio or hFE) is a key parameter of a bipolar junction transistor (BJT) that measures the ratio of the collector current (IC) to the base current (IB) when the transistor is operating in the forward-active region. It is a measure of how much the transistor amplifies the input current.
The forward current gain is denoted by the symbol β and is usually specified in the datasheet of the transistor. It is a dimensionless quantity and can range from a few tens to several hundreds or even thousands, depending on the type of transistor.
The forward current gain is an important parameter for transistor amplifier circuits, as it determines the amount of current amplification that can be achieved. For example, if a transistor has a forward current gain of 100, then for every 1 mA of base current, it can produce 100 mA of collector current.
The forward current gain is not a fixed value and can vary with factors such as temperature, collector current, and the type of transistor. Therefore, it is important to consider the specified range of values for β in the transistor datasheet when designing circuits.
In summary, the forward current gain is a measure of the amplification capability of a bipolar junction transistor and is an important parameter in transistor amplifier circuits.
The forward current gain is denoted by the symbol β and is usually specified in the datasheet of the transistor. It is a dimensionless quantity and can range from a few tens to several hundreds or even thousands, depending on the type of transistor.
The forward current gain is an important parameter for transistor amplifier circuits, as it determines the amount of current amplification that can be achieved. For example, if a transistor has a forward current gain of 100, then for every 1 mA of base current, it can produce 100 mA of collector current.
The forward current gain is not a fixed value and can vary with factors such as temperature, collector current, and the type of transistor. Therefore, it is important to consider the specified range of values for β in the transistor datasheet when designing circuits.
In summary, the forward current gain is a measure of the amplification capability of a bipolar junction transistor and is an important parameter in transistor amplifier circuits.
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The forward current gain (α) of a bipolar transistor can be increased by1. reducing the recombination lifetime in the emitter2. increasing the emitter doping density.3. increasing the base doping density.4.reducing the base width.Select the correct code from the given options,a)2 and 3 onlyb)2 and 4 onlyc)1, 2 and 4 onlyd)4 onlyCorrect answer is option 'B'. Can you explain this answer?
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