Electrical Engineering (EE) Exam > Electrical Engineering (EE) Questions > Thermal runaway in a transistor biased in th...
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Thermal runaway in a transistor biased in the active region is due to
1. Heating of the transistor
2. Change in β due to increase in temperature
3. Change in reverse collector saturation current due to rise in temperature
4. Base emitter voltage VBE which decreases with rise in temperature
Which of the above statements is/are correct?
- a)1 and 2
- b)2 and 3
- c)3 only
- d)4 only
Correct answer is option 'B'. Can you explain this answer?
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Thermal runaway in a transistor biased in the active region is due to...
When an input signal is applied, the output signal should not move the transistor either to saturation or to cut-off. However, this unwanted shift still might occur, due to the following reasons
1. Parameters of transistors depend on junction temperature. As junction temperature increases, leakage current due to minority charge carriers (ICBO) increases. As ICBO increases, ICEO also increases, causing an increase in collector current IC. This produces heat the collector junction. This process repeats, and, finally, the Q-point may shift into the saturation region. Sometimes, the excess heat produced at the junction may even burn the transistor. This is known as thermal runaway.
2. When a transistor is replaced by another of the same type, the Q-point may shift, due to changes in parameters of the transistor, such as current gain (β) which varies slightly for each unique transistor and also temperature dependent.
3. Thermal runaway in a transistor biased in the active region is due to change in reverse collector saturation current due to rise in temperature.
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Thermal runaway in a transistor biased in the active region is due to...
Heating of the transistor:
- Thermal runaway in a transistor biased in the active region is primarily due to the heating of the transistor. As the temperature of the transistor increases, the thermal energy can cause an increase in the number of charge carriers, leading to a rise in the collector current.
Change in β due to increase in temperature:
- The current gain (β) of a transistor can change with temperature variations. As the temperature increases, the β value of the transistor can also increase, leading to a higher collector current. This change in β can contribute to thermal runaway in the transistor.
Change in reverse collector saturation current due to rise in temperature:
- The reverse collector saturation current of a transistor can also change with temperature. As the temperature rises, the reverse saturation current can increase, causing a higher collector current. This change in reverse saturation current can further exacerbate thermal runaway in the transistor.
Therefore, options 2 and 3 are correct as they highlight the key factors contributing to thermal runaway in a transistor biased in the active region.
- Thermal runaway in a transistor biased in the active region is primarily due to the heating of the transistor. As the temperature of the transistor increases, the thermal energy can cause an increase in the number of charge carriers, leading to a rise in the collector current.
Change in β due to increase in temperature:
- The current gain (β) of a transistor can change with temperature variations. As the temperature increases, the β value of the transistor can also increase, leading to a higher collector current. This change in β can contribute to thermal runaway in the transistor.
Change in reverse collector saturation current due to rise in temperature:
- The reverse collector saturation current of a transistor can also change with temperature. As the temperature rises, the reverse saturation current can increase, causing a higher collector current. This change in reverse saturation current can further exacerbate thermal runaway in the transistor.
Therefore, options 2 and 3 are correct as they highlight the key factors contributing to thermal runaway in a transistor biased in the active region.
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Thermal runaway in a transistor biased in the active region is due to1. Heating of the transistor2. Change in β due to increase in temperature3. Change in reverse collector saturation current due to rise in temperature4. Base emitter voltage VBE which decreases with rise in temperatureWhich of the above statements is/are correct?a)1 and 2b)2 and 3c)3 onlyd)4 onlyCorrect answer is option 'B'. Can you explain this answer?
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