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A silicon P-N junction is shown in the figure. The doping in the P region is 5×1016cm−3 and doping in the N region is 10 ×1016 cm−3 . The parameters given are
The magnitude of reverse bias voltage that would completely deplete one of the two regions (P or N) prior to the other (rounded off to one decimal place) is________ V.
Correct answer is '107.67'. Can you explain this answer?
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A silicon P-N junction is shown in the figure. The doping in the P reg...
Given
Doping in P-region NA =5*1016 cm-3
Doping in N-region ND =1017 cm-3
Given p-n junction is shown below,
So width of depletion region, W = Xn + Xp
From charge equality concept,
Suppose when N-is depleted completely, during reverse bias so,
i.e. when N is depleted completely (i.e. 0.2 μm ) then and only then P side is depleted only by 0.4 μm only. Thus
So, total depletion width (W) under reverse bias is,
VR = 8.2395 V≈ 8.24 V
Thus, the magnitude of reverse bias voltage that would completely deplete N region is 8.24 V. Hence, the correct answer for VR is 8.24 V .
Question_Type: 4
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A silicon P-N junction is shown in the figure. The doping in the P reg...
Given
Doping in P-region NA =5*1016 cm-3
Doping in N-region ND =1017 cm-3
Given p-n junction is shown below,
So width of depletion region, W = Xn + Xp
From charge equality concept,
Suppose when N-is depleted completely, during reverse bias so,
i.e. when N is depleted completely (i.e. 0.2 μm ) then and only then P side is depleted only by 0.4 μm only. Thus
So, total depletion width (W) under reverse bias is,
VR = 8.2395 V≈ 8.24 V
Thus, the magnitude of reverse bias voltage that would completely deplete N region is 8.24 V. Hence, the correct answer for VR is 8.24 V .
Question_Type: 4
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A silicon P-N junction is shown in the figure. The doping in the P region is 5×1016cm−3 and doping in the N region is 10 ×1016 cm−3 . The parameters given areThe magnitude of reverse bias voltage that would completely deplete one of the two regions (P or N) prior to the other (rounded off to one decimal place) is________ V.Correct answer is '107.67'. Can you explain this answer?
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A silicon P-N junction is shown in the figure. The doping in the P region is 5×1016cm−3 and doping in the N region is 10 ×1016 cm−3 . The parameters given areThe magnitude of reverse bias voltage that would completely deplete one of the two regions (P or N) prior to the other (rounded off to one decimal place) is________ V.Correct answer is '107.67'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about A silicon P-N junction is shown in the figure. The doping in the P region is 5×1016cm−3 and doping in the N region is 10 ×1016 cm−3 . The parameters given areThe magnitude of reverse bias voltage that would completely deplete one of the two regions (P or N) prior to the other (rounded off to one decimal place) is________ V.Correct answer is '107.67'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for A silicon P-N junction is shown in the figure. The doping in the P region is 5×1016cm−3 and doping in the N region is 10 ×1016 cm−3 . The parameters given areThe magnitude of reverse bias voltage that would completely deplete one of the two regions (P or N) prior to the other (rounded off to one decimal place) is________ V.Correct answer is '107.67'. Can you explain this answer?.
A silicon P-N junction is shown in the figure. The doping in the P region is 5×1016cm−3 and doping in the N region is 10 ×1016 cm−3 . The parameters given areThe magnitude of reverse bias voltage that would completely deplete one of the two regions (P or N) prior to the other (rounded off to one decimal place) is________ V.Correct answer is '107.67'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about A silicon P-N junction is shown in the figure. The doping in the P region is 5×1016cm−3 and doping in the N region is 10 ×1016 cm−3 . The parameters given areThe magnitude of reverse bias voltage that would completely deplete one of the two regions (P or N) prior to the other (rounded off to one decimal place) is________ V.Correct answer is '107.67'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for A silicon P-N junction is shown in the figure. The doping in the P region is 5×1016cm−3 and doping in the N region is 10 ×1016 cm−3 . The parameters given areThe magnitude of reverse bias voltage that would completely deplete one of the two regions (P or N) prior to the other (rounded off to one decimal place) is________ V.Correct answer is '107.67'. Can you explain this answer?.
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A silicon P-N junction is shown in the figure. The doping in the P region is 5×1016cm−3 and doping in the N region is 10 ×1016 cm−3 . The parameters given areThe magnitude of reverse bias voltage that would completely deplete one of the two regions (P or N) prior to the other (rounded off to one decimal place) is________ V.Correct answer is '107.67'. Can you explain this answer?, a detailed solution for A silicon P-N junction is shown in the figure. The doping in the P region is 5×1016cm−3 and doping in the N region is 10 ×1016 cm−3 . The parameters given areThe magnitude of reverse bias voltage that would completely deplete one of the two regions (P or N) prior to the other (rounded off to one decimal place) is________ V.Correct answer is '107.67'. Can you explain this answer? has been provided alongside types of A silicon P-N junction is shown in the figure. The doping in the P region is 5×1016cm−3 and doping in the N region is 10 ×1016 cm−3 . The parameters given areThe magnitude of reverse bias voltage that would completely deplete one of the two regions (P or N) prior to the other (rounded off to one decimal place) is________ V.Correct answer is '107.67'. Can you explain this answer? theory, EduRev gives you an
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