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The maximum electric field in reverse-biased silicon pn junction is Emax  = 3 x 105 V /cm. The dopingconcentration are Nd=4 x1016 cm-3and Na= 4 x 1017cm-3. The magnitude of the reverse bias voltage isa)3.6 Vb)9.8 Vc)7.2 Vd)12.3 VCorrect answer is 'C'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about The maximum electric field in reverse-biased silicon pn junction is Emax  = 3 x 105 V /cm. The dopingconcentration are Nd=4 x1016 cm-3and Na= 4 x 1017cm-3. The magnitude of the reverse bias voltage isa)3.6 Vb)9.8 Vc)7.2 Vd)12.3 VCorrect answer is 'C'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for The maximum electric field in reverse-biased silicon pn junction is Emax  = 3 x 105 V /cm. The dopingconcentration are Nd=4 x1016 cm-3and Na= 4 x 1017cm-3. The magnitude of the reverse bias voltage isa)3.6 Vb)9.8 Vc)7.2 Vd)12.3 VCorrect answer is 'C'. Can you explain this answer?.

Solutions for The maximum electric field in reverse-biased silicon pn junction is Emax  = 3 x 105 V /cm. The dopingconcentration are Nd=4 x1016 cm-3and Na= 4 x 1017cm-3. The magnitude of the reverse bias voltage isa)3.6 Vb)9.8 Vc)7.2 Vd)12.3 VCorrect answer is 'C'. Can you explain this answer? in English & in Hindi are available as part of our courses for Electronics and Communication Engineering (ECE). Download more important topics, notes, lectures and mock test series for Electronics and Communication Engineering (ECE) Exam by signing up for free.

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