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Excess carriers are generated in a sample of N-type semiconductor by shining light at one end. The current flow in the sample will be made up of
- a)diffusion flow of carriers
- b)drift flow of carriers
- c)both diffusion and drift flow of carriers
- d)neither diffusion nor drift flow of carriers
Correct answer is option 'A'. Can you explain this answer?
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Excess carriers are generated in a sample of N-type semiconductor by s...
Answer:
Introduction:
In a semiconductor material, excess carriers can be generated by various mechanisms, such as thermal excitation, electric field excitation, or optical excitation. In the case of an N-type semiconductor, excess carriers are generated by shining light at one end of the sample. The movement of these excess carriers contributes to the current flow in the sample.
Diffusion Flow of Carriers:
Diffusion is the process by which particles move from an area of high concentration to an area of low concentration. In the case of semiconductors, excess carriers generated by light excitation tend to diffuse towards regions of lower carrier concentration. In an N-type semiconductor, the excess carriers are electrons. These electrons will diffuse towards the region of the sample where the electron concentration is lower. This diffusion of excess carriers contributes to the current flow in the sample.
Drift Flow of Carriers:
Drift is the process by which charge carriers move in response to an electric field. In a semiconductor, an electric field can be created by applying a voltage across the semiconductor material. When a voltage is applied, the excess carriers (electrons in the case of an N-type semiconductor) will experience a force and move in the direction of the electric field. This movement of excess carriers due to the electric field is called drift. Drift also contributes to the current flow in the sample.
Combination of Diffusion and Drift:
In the given scenario, the excess carriers in the N-type semiconductor are generated by shining light at one end of the sample. These excess carriers will undergo both diffusion and drift processes. They will diffuse towards regions of lower electron concentration and also drift towards the positive terminal of the applied voltage. Therefore, the current flow in the sample will be made up of both diffusion and drift flow of carriers.
Conclusion:
In summary, when excess carriers are generated in an N-type semiconductor by shining light at one end, the current flow in the sample is made up of both diffusion and drift flow of carriers. Diffusion occurs as the excess carriers move from regions of high concentration to low concentration, while drift occurs as the excess carriers move in response to an applied electric field.
Introduction:
In a semiconductor material, excess carriers can be generated by various mechanisms, such as thermal excitation, electric field excitation, or optical excitation. In the case of an N-type semiconductor, excess carriers are generated by shining light at one end of the sample. The movement of these excess carriers contributes to the current flow in the sample.
Diffusion Flow of Carriers:
Diffusion is the process by which particles move from an area of high concentration to an area of low concentration. In the case of semiconductors, excess carriers generated by light excitation tend to diffuse towards regions of lower carrier concentration. In an N-type semiconductor, the excess carriers are electrons. These electrons will diffuse towards the region of the sample where the electron concentration is lower. This diffusion of excess carriers contributes to the current flow in the sample.
Drift Flow of Carriers:
Drift is the process by which charge carriers move in response to an electric field. In a semiconductor, an electric field can be created by applying a voltage across the semiconductor material. When a voltage is applied, the excess carriers (electrons in the case of an N-type semiconductor) will experience a force and move in the direction of the electric field. This movement of excess carriers due to the electric field is called drift. Drift also contributes to the current flow in the sample.
Combination of Diffusion and Drift:
In the given scenario, the excess carriers in the N-type semiconductor are generated by shining light at one end of the sample. These excess carriers will undergo both diffusion and drift processes. They will diffuse towards regions of lower electron concentration and also drift towards the positive terminal of the applied voltage. Therefore, the current flow in the sample will be made up of both diffusion and drift flow of carriers.
Conclusion:
In summary, when excess carriers are generated in an N-type semiconductor by shining light at one end, the current flow in the sample is made up of both diffusion and drift flow of carriers. Diffusion occurs as the excess carriers move from regions of high concentration to low concentration, while drift occurs as the excess carriers move in response to an applied electric field.
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Excess carriers are generated in a sample of N-type semiconductor by shining light at one end. The current flow in the sample will be made up ofa)diffusion flow of carriersb)drift flow of carriersc)both diffusion and drift flow of carriersd)neither diffusion nor drift flow of carriersCorrect answer is option 'A'. Can you explain this answer?
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Excess carriers are generated in a sample of N-type semiconductor by shining light at one end. The current flow in the sample will be made up ofa)diffusion flow of carriersb)drift flow of carriersc)both diffusion and drift flow of carriersd)neither diffusion nor drift flow of carriersCorrect answer is option 'A'. Can you explain this answer? for Electrical Engineering (EE) 2024 is part of Electrical Engineering (EE) preparation. The Question and answers have been prepared according to the Electrical Engineering (EE) exam syllabus. Information about Excess carriers are generated in a sample of N-type semiconductor by shining light at one end. The current flow in the sample will be made up ofa)diffusion flow of carriersb)drift flow of carriersc)both diffusion and drift flow of carriersd)neither diffusion nor drift flow of carriersCorrect answer is option 'A'. Can you explain this answer? covers all topics & solutions for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Excess carriers are generated in a sample of N-type semiconductor by shining light at one end. The current flow in the sample will be made up ofa)diffusion flow of carriersb)drift flow of carriersc)both diffusion and drift flow of carriersd)neither diffusion nor drift flow of carriersCorrect answer is option 'A'. Can you explain this answer?.
Excess carriers are generated in a sample of N-type semiconductor by shining light at one end. The current flow in the sample will be made up ofa)diffusion flow of carriersb)drift flow of carriersc)both diffusion and drift flow of carriersd)neither diffusion nor drift flow of carriersCorrect answer is option 'A'. Can you explain this answer? for Electrical Engineering (EE) 2024 is part of Electrical Engineering (EE) preparation. The Question and answers have been prepared according to the Electrical Engineering (EE) exam syllabus. Information about Excess carriers are generated in a sample of N-type semiconductor by shining light at one end. The current flow in the sample will be made up ofa)diffusion flow of carriersb)drift flow of carriersc)both diffusion and drift flow of carriersd)neither diffusion nor drift flow of carriersCorrect answer is option 'A'. Can you explain this answer? covers all topics & solutions for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Excess carriers are generated in a sample of N-type semiconductor by shining light at one end. The current flow in the sample will be made up ofa)diffusion flow of carriersb)drift flow of carriersc)both diffusion and drift flow of carriersd)neither diffusion nor drift flow of carriersCorrect answer is option 'A'. Can you explain this answer?.
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Excess carriers are generated in a sample of N-type semiconductor by shining light at one end. The current flow in the sample will be made up ofa)diffusion flow of carriersb)drift flow of carriersc)both diffusion and drift flow of carriersd)neither diffusion nor drift flow of carriersCorrect answer is option 'A'. Can you explain this answer?, a detailed solution for Excess carriers are generated in a sample of N-type semiconductor by shining light at one end. The current flow in the sample will be made up ofa)diffusion flow of carriersb)drift flow of carriersc)both diffusion and drift flow of carriersd)neither diffusion nor drift flow of carriersCorrect answer is option 'A'. Can you explain this answer? has been provided alongside types of Excess carriers are generated in a sample of N-type semiconductor by shining light at one end. The current flow in the sample will be made up ofa)diffusion flow of carriersb)drift flow of carriersc)both diffusion and drift flow of carriersd)neither diffusion nor drift flow of carriersCorrect answer is option 'A'. Can you explain this answer? theory, EduRev gives you an
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