Electrical Engineering (EE) Exam  >  Electrical Engineering (EE) Questions  >  To make a signal diode suitable for high curr... Start Learning for Free
To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________
  • a)
    a lightly doped n layer is grown between the two p & n layers
  • b)
    a heavily doped n layer is grown between the two p & n layers
  • c)
    a lightly doped p layer is grown between the two p & n layers
  • d)
    a heavily doped p layer is grown between the two p & n layers
Correct answer is option 'A'. Can you explain this answer?
Most Upvoted Answer
To make a signal diode suitable for high current & high voltage ca...
To make a signal diode suitable for high current, you can follow these steps:

1. Select a diode with a high current rating: Look for a diode that is specifically designed to handle high currents. These diodes are usually labeled as "high current" or have a higher current rating in their specifications.

2. Increase the diode's heat dissipation capabilities: High currents generate more heat, so it is crucial to ensure that the diode can handle this heat. You can add a heat sink to the diode to improve its heat dissipation capabilities. A heat sink is a device that absorbs and dissipates heat from the diode, helping to keep it cool.

3. Implement proper cooling: In addition to a heat sink, you may need to implement additional cooling methods such as forced air cooling or liquid cooling. These methods can further enhance the diode's ability to handle high currents by keeping it at a lower temperature.

4. Consider parallel diode configuration: Another option is to connect multiple diodes in parallel. By doing so, you can distribute the current among the diodes, allowing them to handle higher currents collectively.

5. Ensure proper connections: Make sure to use suitable wires and connectors that can handle the high current without overheating or causing voltage drops. It is crucial to ensure good electrical connections to minimize resistance and prevent additional heat generation.

Please note that these steps provide some general guidelines, but it is always essential to consult the diode's datasheet and manufacturer's recommendations for specific instructions on using the diode at high currents.
Free Test
Community Answer
To make a signal diode suitable for high current & high voltage ca...
In a signal diode, the purpose of adding a lightly doped n layer between the p and n layers is to increase the breakdown voltage and improve its power handling capabilities. The lightly doped n layer creates a depletion region that can withstand higher voltages before experiencing breakdown.
By increasing the doping level in the lightly doped n layer, the diode's breakdown voltage can be significantly increased while minimizing losses. This allows the diode to handle higher voltages without experiencing excessive power dissipation.
Option A correctly suggests the addition of a lightly doped n layer between the p and n layers, which enhances the diode's ability to handle high currents and high voltages with minimum losses. Options B, C, and D, which involve heavily doped layers, do not provide the same benefits in terms of voltage handling and power dissipation as the lightly doped n layer does.
Explore Courses for Electrical Engineering (EE) exam

Top Courses for Electrical Engineering (EE)

To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________a)a lightly doped n layer is grown between the two p & n layersb)a heavily doped n layer is grown between the two p & n layersc)a lightly doped p layer is grown between the two p & n layersd)a heavily doped p layer is grown between the two p & n layersCorrect answer is option 'A'. Can you explain this answer?
Question Description
To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________a)a lightly doped n layer is grown between the two p & n layersb)a heavily doped n layer is grown between the two p & n layersc)a lightly doped p layer is grown between the two p & n layersd)a heavily doped p layer is grown between the two p & n layersCorrect answer is option 'A'. Can you explain this answer? for Electrical Engineering (EE) 2024 is part of Electrical Engineering (EE) preparation. The Question and answers have been prepared according to the Electrical Engineering (EE) exam syllabus. Information about To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________a)a lightly doped n layer is grown between the two p & n layersb)a heavily doped n layer is grown between the two p & n layersc)a lightly doped p layer is grown between the two p & n layersd)a heavily doped p layer is grown between the two p & n layersCorrect answer is option 'A'. Can you explain this answer? covers all topics & solutions for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________a)a lightly doped n layer is grown between the two p & n layersb)a heavily doped n layer is grown between the two p & n layersc)a lightly doped p layer is grown between the two p & n layersd)a heavily doped p layer is grown between the two p & n layersCorrect answer is option 'A'. Can you explain this answer?.
Solutions for To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________a)a lightly doped n layer is grown between the two p & n layersb)a heavily doped n layer is grown between the two p & n layersc)a lightly doped p layer is grown between the two p & n layersd)a heavily doped p layer is grown between the two p & n layersCorrect answer is option 'A'. Can you explain this answer? in English & in Hindi are available as part of our courses for Electrical Engineering (EE). Download more important topics, notes, lectures and mock test series for Electrical Engineering (EE) Exam by signing up for free.
Here you can find the meaning of To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________a)a lightly doped n layer is grown between the two p & n layersb)a heavily doped n layer is grown between the two p & n layersc)a lightly doped p layer is grown between the two p & n layersd)a heavily doped p layer is grown between the two p & n layersCorrect answer is option 'A'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________a)a lightly doped n layer is grown between the two p & n layersb)a heavily doped n layer is grown between the two p & n layersc)a lightly doped p layer is grown between the two p & n layersd)a heavily doped p layer is grown between the two p & n layersCorrect answer is option 'A'. Can you explain this answer?, a detailed solution for To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________a)a lightly doped n layer is grown between the two p & n layersb)a heavily doped n layer is grown between the two p & n layersc)a lightly doped p layer is grown between the two p & n layersd)a heavily doped p layer is grown between the two p & n layersCorrect answer is option 'A'. Can you explain this answer? has been provided alongside types of To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________a)a lightly doped n layer is grown between the two p & n layersb)a heavily doped n layer is grown between the two p & n layersc)a lightly doped p layer is grown between the two p & n layersd)a heavily doped p layer is grown between the two p & n layersCorrect answer is option 'A'. Can you explain this answer? theory, EduRev gives you an ample number of questions to practice To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________a)a lightly doped n layer is grown between the two p & n layersb)a heavily doped n layer is grown between the two p & n layersc)a lightly doped p layer is grown between the two p & n layersd)a heavily doped p layer is grown between the two p & n layersCorrect answer is option 'A'. Can you explain this answer? tests, examples and also practice Electrical Engineering (EE) tests.
Explore Courses for Electrical Engineering (EE) exam

Top Courses for Electrical Engineering (EE)

Explore Courses
Signup for Free!
Signup to see your scores go up within 7 days! Learn & Practice with 1000+ FREE Notes, Videos & Tests.
10M+ students study on EduRev