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The following statements are related to a tunnel diode1. Fermi level in n-side lies inside valence band2. Excellent conduction is possible in reverse bias3. In reverse bias negative resistance is exhibited4. VP > VV5. It can act as oscillator6. The magnitude of lP is decided by impurity concentration and Junction area7. Ge tunnel diode is used for commercial applicationsWhich of the above statements are false?a)1, 3 & 4b)1, 3, 4 & 7c)1, 3, 4, 6 & 7d)2, 5, 6 & 7Correct answer is option 'A'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about The following statements are related to a tunnel diode1. Fermi level in n-side lies inside valence band2. Excellent conduction is possible in reverse bias3. In reverse bias negative resistance is exhibited4. VP > VV5. It can act as oscillator6. The magnitude of lP is decided by impurity concentration and Junction area7. Ge tunnel diode is used for commercial applicationsWhich of the above statements are false?a)1, 3 & 4b)1, 3, 4 & 7c)1, 3, 4, 6 & 7d)2, 5, 6 & 7Correct answer is option 'A'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for The following statements are related to a tunnel diode1. Fermi level in n-side lies inside valence band2. Excellent conduction is possible in reverse bias3. In reverse bias negative resistance is exhibited4. VP > VV5. It can act as oscillator6. The magnitude of lP is decided by impurity concentration and Junction area7. Ge tunnel diode is used for commercial applicationsWhich of the above statements are false?a)1, 3 & 4b)1, 3, 4 & 7c)1, 3, 4, 6 & 7d)2, 5, 6 & 7Correct answer is option 'A'. Can you explain this answer?.

Solutions for The following statements are related to a tunnel diode1. Fermi level in n-side lies inside valence band2. Excellent conduction is possible in reverse bias3. In reverse bias negative resistance is exhibited4. VP > VV5. It can act as oscillator6. The magnitude of lP is decided by impurity concentration and Junction area7. Ge tunnel diode is used for commercial applicationsWhich of the above statements are false?a)1, 3 & 4b)1, 3, 4 & 7c)1, 3, 4, 6 & 7d)2, 5, 6 & 7Correct answer is option 'A'. Can you explain this answer? in English & in Hindi are available as part of our courses for Electronics and Communication Engineering (ECE). Download more important topics, notes, lectures and mock test series for Electronics and Communication Engineering (ECE) Exam by signing up for free.

Here you can find the meaning of The following statements are related to a tunnel diode1. Fermi level in n-side lies inside valence band2. Excellent conduction is possible in reverse bias3. In reverse bias negative resistance is exhibited4. VP > VV5. It can act as oscillator6. The magnitude of lP is decided by impurity concentration and Junction area7. Ge tunnel diode is used for commercial applicationsWhich of the above statements are false?a)1, 3 & 4b)1, 3, 4 & 7c)1, 3, 4, 6 & 7d)2, 5, 6 & 7Correct answer is option 'A'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of The following statements are related to a tunnel diode1. Fermi level in n-side lies inside valence band2. Excellent conduction is possible in reverse bias3. In reverse bias negative resistance is exhibited4. VP > VV5. It can act as oscillator6. The magnitude of lP is decided by impurity concentration and Junction area7. Ge tunnel diode is used for commercial applicationsWhich of the above statements are false?a)1, 3 & 4b)1, 3, 4 & 7c)1, 3, 4, 6 & 7d)2, 5, 6 & 7Correct answer is option 'A'. Can you explain this answer?, a detailed solution for The following statements are related to a tunnel diode1. Fermi level in n-side lies inside valence band2. Excellent conduction is possible in reverse bias3. In reverse bias negative resistance is exhibited4. VP > VV5. It can act as oscillator6. The magnitude of lP is decided by impurity concentration and Junction area7. Ge tunnel diode is used for commercial applicationsWhich of the above statements are false?a)1, 3 & 4b)1, 3, 4 & 7c)1, 3, 4, 6 & 7d)2, 5, 6 & 7Correct answer is option 'A'. Can you explain this answer? has been provided alongside types of The following statements are related to a tunnel diode1. Fermi level in n-side lies inside valence band2. Excellent conduction is possible in reverse bias3. In reverse bias negative resistance is exhibited4. VP > VV5. It can act as oscillator6. The magnitude of lP is decided by impurity concentration and Junction area7. Ge tunnel diode is used for commercial applicationsWhich of the above statements are false?a)1, 3 & 4b)1, 3, 4 & 7c)1, 3, 4, 6 & 7d)2, 5, 6 & 7Correct answer is option 'A'. Can you explain this answer? theory, EduRev gives you an ample number of questions to practice The following statements are related to a tunnel diode1. Fermi level in n-side lies inside valence band2. Excellent conduction is possible in reverse bias3. In reverse bias negative resistance is exhibited4. VP > VV5. It can act as oscillator6. The magnitude of lP is decided by impurity concentration and Junction area7. Ge tunnel diode is used for commercial applicationsWhich of the above statements are false?a)1, 3 & 4b)1, 3, 4 & 7c)1, 3, 4, 6 & 7d)2, 5, 6 & 7Correct answer is option 'A'. Can you explain this answer? tests, examples and also practice Electronics and Communication Engineering (ECE) tests.