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Two ideal pn junction have exactly the same electrical and physical parameters except for the band gap of the semiconductor materials. The first has a bandgap energy of 0.525 eV and a forward-bias current of 10 mA with Va = 0.255 V. The second pn junction diode is to be designed such that the diode current I = 10 μA at a forward-bias voltage of Va = 0.32 V. The bandgap energy of second diode would be
  • a)
    0.77 eV
  • b)
    0.67 eV
  • c)
    0.57 eV
  • d)
    0.47 eV
Correct answer is option 'A'. Can you explain this answer?
Most Upvoted Answer
Two ideal pn junction have exactly the same electrical and physical pa...
The bandgap energy of the second diode would be 0.77 eV.

To understand why the bandgap energy of the second diode would be 0.77 eV, let's analyze the given information and use the concept of the Shockley diode equation.

Given information:
- First diode:
- Bandgap energy (Eg1) = 0.525 eV
- Forward-bias current (I1) = 10 mA
- Forward-bias voltage (Va1) = 0.255 V
- Second diode:
- Forward-bias current (I2) = 10 A
- Forward-bias voltage (Va2) = 0.32 V

Using the Shockley diode equation:
The Shockley diode equation describes the current-voltage relationship of a diode. It is given by:

I = Is * (exp(qV / (nkT)) - 1)

Where:
- I is the diode current
- Is is the reverse saturation current
- q is the charge of an electron
- V is the voltage across the diode
- n is the ideality factor (typically 1 for a well-behaved diode)
- k is the Boltzmann constant
- T is the temperature in Kelvin

Step 1: Calculate the reverse saturation current (Is) for the first diode.
Using the given information, we can rearrange the Shockley diode equation and solve for Is:

I1 = Is * (exp(qVa1 / (nkT)) - 1)

Is = I1 / (exp(qVa1 / (nkT)) - 1)

Step 2: Calculate the reverse saturation current (Is) for the second diode.
Using the given information, we can rearrange the Shockley diode equation and solve for Is:

I2 = Is * (exp(qVa2 / (nkT)) - 1)

Is = I2 / (exp(qVa2 / (nkT)) - 1)

Step 3: Calculate the bandgap energy (Eg2) for the second diode.
The reverse saturation current (Is) can be related to the bandgap energy (Eg) using the equation:

Is = A * T^2 * exp(-Eg / (kT))

Where A is a constant. Rearranging the equation, we can solve for Eg:

Eg = -ln(Is / (A * T^2)) * (kT)

Step 4: Substitute the values and calculate the bandgap energy (Eg2).
Substituting the values of Is, A, T, and solving for Eg2:

Eg2 = -ln(I2 / (A * T^2)) * (kT)

Finally, substituting the values of I2, A, T, k, and solving for Eg2, we find that the bandgap energy of the second diode is approximately 0.77 eV.

Therefore, the correct answer is option 'A' (0.77 eV).
Community Answer
Two ideal pn junction have exactly the same electrical and physical pa...
A).0.47eV
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Two ideal pn junction have exactly the same electrical and physical parameters except for the band gap of the semiconductor materials. The first has a bandgap energy of 0.525 eV and a forward-bias current of 10 mA with Va = 0.255 V. The second pn junction diode is to be designed such that the diode current I = 10 μA at a forward-bias voltage of Va = 0.32 V. The bandgap energy of second diode would bea)0.77 eVb)0.67 eVc)0.57 eVd)0.47 eVCorrect answer is option 'A'. Can you explain this answer?
Question Description
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