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n-type semiconductors
- a)are negatively charged
- b)are produced when indium is added as impurity to germanium
- c)are produced when phosphorus is added as impurity to silicon
- d)none of the above
Correct answer is option 'C'. Can you explain this answer?
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n-type semiconductorsa)are negatively chargedb)are produced when indiu...
n type semiconductor is produced when pentavalent impurity is added.
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n-type semiconductorsa)are negatively chargedb)are produced when indiu...
N-type semiconductors are a type of semiconductor material that have an excess of free electrons, giving them a negative charge. They are produced when certain impurities are added to the semiconductor material.
When phosphorus is added as an impurity to silicon, it creates an n-type semiconductor. This process is known as doping. Doping is the intentional addition of impurities to a semiconductor material in order to alter its electrical properties.
Below are the explanations for each option:
a) Negatively charged: This statement is partially correct. N-type semiconductors have an excess of free electrons, which carry a negative charge. However, this is not the only characteristic of n-type semiconductors.
b) Indium added as impurity to germanium: This statement is incorrect. Indium is actually used to create p-type semiconductors, which have an excess of positively charged holes.
c) Phosphorus added as impurity to silicon: This statement is correct. Phosphorus is commonly used as a dopant in silicon to create n-type semiconductors. When phosphorus atoms are added to silicon, they have one extra electron compared to silicon atoms, leading to the formation of free electrons.
d) None of the above: This statement is incorrect since option C is the correct answer.
In summary, n-type semiconductors are produced when phosphorus is added as an impurity to silicon. This addition of phosphorus creates an excess of free electrons, giving the semiconductor a negative charge.
When phosphorus is added as an impurity to silicon, it creates an n-type semiconductor. This process is known as doping. Doping is the intentional addition of impurities to a semiconductor material in order to alter its electrical properties.
Below are the explanations for each option:
a) Negatively charged: This statement is partially correct. N-type semiconductors have an excess of free electrons, which carry a negative charge. However, this is not the only characteristic of n-type semiconductors.
b) Indium added as impurity to germanium: This statement is incorrect. Indium is actually used to create p-type semiconductors, which have an excess of positively charged holes.
c) Phosphorus added as impurity to silicon: This statement is correct. Phosphorus is commonly used as a dopant in silicon to create n-type semiconductors. When phosphorus atoms are added to silicon, they have one extra electron compared to silicon atoms, leading to the formation of free electrons.
d) None of the above: This statement is incorrect since option C is the correct answer.
In summary, n-type semiconductors are produced when phosphorus is added as an impurity to silicon. This addition of phosphorus creates an excess of free electrons, giving the semiconductor a negative charge.
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n-type semiconductorsa)are negatively chargedb)are produced when indium is added as impurity to germaniumc)are produced when phosphorus is added as impurity to silicond)none of the aboveCorrect answer is option 'C'. Can you explain this answer?
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