Introduction:
In this question, we are asked to choose the correct statement regarding IGBTs (Insulated-gate bipolar transistors). Let's analyze each option to determine the correct statement.

Analysis of statements:

a) IGBTs have higher switching losses as compared to BJTs:
IGBTs have lower switching losses compared to BJTs (Bipolar Junction Transistors). This is because IGBTs have a MOSFET input stage, which provides voltage control and reduces the switching losses associated with BJTs. Therefore, option a) is incorrect.

b) IGBTs have secondary breakdown problems:
Secondary breakdown is a phenomenon where the current concentration in a small area of the device leads to localized heating and subsequent failure. While BJTs are susceptible to secondary breakdown, IGBTs are designed to overcome this issue. The IGBT structure includes a MOSFET input stage, which provides better current handling capabilities and reduces the risk of secondary breakdown. Therefore, option b) is incorrect.

c) IGBTs have lower gate drive requirements:
This statement is correct. IGBTs have significantly lower gate drive requirements compared to BJTs. BJTs require a continuous base current to remain in the ON state, while IGBTs are voltage-controlled devices. Once the gate voltage reaches the threshold level, the IGBT remains in the ON state until the voltage is removed. This characteristic makes IGBTs easier to drive and control, reducing the gate drive requirements. Therefore, option c) is correct.

d) IGBTs are current controlled devices:
This statement is incorrect. IGBTs are voltage-controlled devices. The gate-emitter voltage (VGE) determines the conduction state of the IGBT. Once the VGE exceeds the threshold voltage, the IGBT turns ON and conducts current. The magnitude of the gate current (IG) does not directly control the IGBT's conduction. Therefore, option d) is incorrect.

Conclusion:
Among the given options, the correct statement is c) "IGBTs have lower gate drive requirements." This is because IGBTs are voltage-controlled devices and do not require a continuous base current like BJTs do.