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For a MOSFET with gate plate area 0.5 × 10-2 cm2 and oxide layer thickness 80 nm, the value of MOS capacitance and its break down voltage are, (assume relative di-electric constant of sio2, ϵr = 4 and ϵ0 = 8.854 × 10-14 F/cm and dielectric strength of sio2 film is 5 × 106 V/cm)
- a)0.22 μF and 80V
- b)0.22 μF and 40V
- c)1.22 μF and 40V
- d)1.08 μF and 80V
Correct answer is option 'B'. Can you explain this answer?
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Verified Answer
For a MOSFET with gate plate area 0.5 × 10-2cm2and oxide layer t...
Given gate plate area, which is also MOS capacitor area A = 0.5 × 10-2cm2
Oxide layer thickness tox = 80 nm
The value of MOS capacitance:
= 0.22 μF
= 0.22 μF
Dielectric breakdown happens of field 
greater than dielectric strength (5 × 106 V/cm)
V = 5 × 108 × 80 × 10-9 V = 40V
greater than dielectric strength (5 × 106 V/cm)V = 5 × 108 × 80 × 10-9 V = 40V
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For a MOSFET with gate plate area 0.5 × 10-2cm2and oxide layer t...
In order to answer your question, I need to know the units for the gate plate area. Can you please provide that information?
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For a MOSFET with gate plate area 0.5 × 10-2cm2and oxide layer t...
Given gate plate area, which is also MOS capacitor area A = 0.5 × 10-2cm2
Oxide layer thickness tox = 80 nm
The value of MOS capacitance
= 0.22 μF
Dielectric breakdown happens of field greater than dielectric strength (5 × 106 V/cm)
V = 5 × 108 × 80 × 10-9 V = 40V
greater than dielectric strength (5 × 106 V/cm)V = 5 × 108 × 80 × 10-9 V = 40V
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For a MOSFET with gate plate area 0.5 × 10-2cm2and oxide layer thickness 80 nm, the value of MOS capacitance and its break down voltage are, (assume relative di-electric constant of sio2, ϵr= 4 and ϵ0= 8.854 × 10-14F/cm and dielectric strength of sio2film is 5 × 106V/cm)a)0.22 μF and 80Vb)0.22 μF and 40Vc)1.22 μF and 40Vd)1.08 μF and 80VCorrect answer is option 'B'. Can you explain this answer?
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For a MOSFET with gate plate area 0.5 × 10-2cm2and oxide layer thickness 80 nm, the value of MOS capacitance and its break down voltage are, (assume relative di-electric constant of sio2, ϵr= 4 and ϵ0= 8.854 × 10-14F/cm and dielectric strength of sio2film is 5 × 106V/cm)a)0.22 μF and 80Vb)0.22 μF and 40Vc)1.22 μF and 40Vd)1.08 μF and 80VCorrect answer is option 'B'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about For a MOSFET with gate plate area 0.5 × 10-2cm2and oxide layer thickness 80 nm, the value of MOS capacitance and its break down voltage are, (assume relative di-electric constant of sio2, ϵr= 4 and ϵ0= 8.854 × 10-14F/cm and dielectric strength of sio2film is 5 × 106V/cm)a)0.22 μF and 80Vb)0.22 μF and 40Vc)1.22 μF and 40Vd)1.08 μF and 80VCorrect answer is option 'B'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for For a MOSFET with gate plate area 0.5 × 10-2cm2and oxide layer thickness 80 nm, the value of MOS capacitance and its break down voltage are, (assume relative di-electric constant of sio2, ϵr= 4 and ϵ0= 8.854 × 10-14F/cm and dielectric strength of sio2film is 5 × 106V/cm)a)0.22 μF and 80Vb)0.22 μF and 40Vc)1.22 μF and 40Vd)1.08 μF and 80VCorrect answer is option 'B'. Can you explain this answer?.
For a MOSFET with gate plate area 0.5 × 10-2cm2and oxide layer thickness 80 nm, the value of MOS capacitance and its break down voltage are, (assume relative di-electric constant of sio2, ϵr= 4 and ϵ0= 8.854 × 10-14F/cm and dielectric strength of sio2film is 5 × 106V/cm)a)0.22 μF and 80Vb)0.22 μF and 40Vc)1.22 μF and 40Vd)1.08 μF and 80VCorrect answer is option 'B'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about For a MOSFET with gate plate area 0.5 × 10-2cm2and oxide layer thickness 80 nm, the value of MOS capacitance and its break down voltage are, (assume relative di-electric constant of sio2, ϵr= 4 and ϵ0= 8.854 × 10-14F/cm and dielectric strength of sio2film is 5 × 106V/cm)a)0.22 μF and 80Vb)0.22 μF and 40Vc)1.22 μF and 40Vd)1.08 μF and 80VCorrect answer is option 'B'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for For a MOSFET with gate plate area 0.5 × 10-2cm2and oxide layer thickness 80 nm, the value of MOS capacitance and its break down voltage are, (assume relative di-electric constant of sio2, ϵr= 4 and ϵ0= 8.854 × 10-14F/cm and dielectric strength of sio2film is 5 × 106V/cm)a)0.22 μF and 80Vb)0.22 μF and 40Vc)1.22 μF and 40Vd)1.08 μF and 80VCorrect answer is option 'B'. Can you explain this answer?.
Solutions for For a MOSFET with gate plate area 0.5 × 10-2cm2and oxide layer thickness 80 nm, the value of MOS capacitance and its break down voltage are, (assume relative di-electric constant of sio2, ϵr= 4 and ϵ0= 8.854 × 10-14F/cm and dielectric strength of sio2film is 5 × 106V/cm)a)0.22 μF and 80Vb)0.22 μF and 40Vc)1.22 μF and 40Vd)1.08 μF and 80VCorrect answer is option 'B'. Can you explain this answer? in English & in Hindi are available as part of our courses for Electronics and Communication Engineering (ECE).
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For a MOSFET with gate plate area 0.5 × 10-2cm2and oxide layer thickness 80 nm, the value of MOS capacitance and its break down voltage are, (assume relative di-electric constant of sio2, ϵr= 4 and ϵ0= 8.854 × 10-14F/cm and dielectric strength of sio2film is 5 × 106V/cm)a)0.22 μF and 80Vb)0.22 μF and 40Vc)1.22 μF and 40Vd)1.08 μF and 80VCorrect answer is option 'B'. Can you explain this answer?, a detailed solution for For a MOSFET with gate plate area 0.5 × 10-2cm2and oxide layer thickness 80 nm, the value of MOS capacitance and its break down voltage are, (assume relative di-electric constant of sio2, ϵr= 4 and ϵ0= 8.854 × 10-14F/cm and dielectric strength of sio2film is 5 × 106V/cm)a)0.22 μF and 80Vb)0.22 μF and 40Vc)1.22 μF and 40Vd)1.08 μF and 80VCorrect answer is option 'B'. Can you explain this answer? has been provided alongside types of For a MOSFET with gate plate area 0.5 × 10-2cm2and oxide layer thickness 80 nm, the value of MOS capacitance and its break down voltage are, (assume relative di-electric constant of sio2, ϵr= 4 and ϵ0= 8.854 × 10-14F/cm and dielectric strength of sio2film is 5 × 106V/cm)a)0.22 μF and 80Vb)0.22 μF and 40Vc)1.22 μF and 40Vd)1.08 μF and 80VCorrect answer is option 'B'. Can you explain this answer? theory, EduRev gives you an
ample number of questions to practice For a MOSFET with gate plate area 0.5 × 10-2cm2and oxide layer thickness 80 nm, the value of MOS capacitance and its break down voltage are, (assume relative di-electric constant of sio2, ϵr= 4 and ϵ0= 8.854 × 10-14F/cm and dielectric strength of sio2film is 5 × 106V/cm)a)0.22 μF and 80Vb)0.22 μF and 40Vc)1.22 μF and 40Vd)1.08 μF and 80VCorrect answer is option 'B'. Can you explain this answer? tests, examples and also practice Electronics and Communication Engineering (ECE) tests.
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