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The principle of the MOSFET operation is:
  • a)
    Control the conduction of current between the source and the drain, using the potential difference applied at the gate voltage as a control variable
  • b)
    Control the current conduction between the source and the gate, using the electric field applied at the drain voltage as a control variable
  • c)
    Control the current conduction between the PN junction, using the electric field generated by the bias voltage as a control variable
  • d)
    Control the current conduction between the PN junctions, using the electric potential generated by the gate voltage as a control variable
Correct answer is option 'A'. Can you explain this answer?
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Verified Answer
The principle of the MOSFET operation is:a)Control the conduction of c...
 By varying the gate voltage the current between the source and drain are varied.
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The principle of the MOSFET operation is:a)Control the conduction of c...
MOSFET Operation Principle:
The principle of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) operation is to control the conduction of current between the source and the drain by using the potential difference applied at the gate voltage as a control variable.

Explanation:
MOSFET is a type of field-effect transistor that is widely used in various electronic devices and integrated circuits. It consists of a metal gate electrode separated from the semiconductor channel by a thin insulating layer of oxide (typically silicon dioxide). The channel is formed by two heavily doped regions called the source and the drain, which are connected to the external circuit.

1. Structure of MOSFET:
The MOSFET has the following key components:
- Gate: It is the metal electrode that controls the current flow through the channel.
- Source: It is the region from where the current enters the channel.
- Drain: It is the region where the current exits the channel.
- Channel: It is the region between the source and the drain, through which the current flows.
- Gate Oxide: It is the thin insulating layer that separates the gate from the channel.

2. Working Principle:
The operation of a MOSFET is based on the control of charge carriers (electrons or holes) in the channel by varying the voltage applied to the gate. The MOSFET can be operated in two modes: enhancement mode and depletion mode. Here, we will focus on the enhancement mode, which is the most commonly used mode.

- When a positive voltage is applied at the gate, it creates an electric field across the gate oxide, which attracts electrons towards the surface of the channel (if the MOSFET is an n-channel device).
- The attracted electrons form a conductive channel between the source and the drain, allowing current to flow through the device.
- By varying the gate voltage, the width and conductivity of the channel can be controlled, thereby controlling the current conduction between the source and the drain.
- When the gate voltage is sufficiently high, the channel becomes fully enhanced, and the MOSFET operates in the saturation region, allowing maximum current flow.
- On the other hand, when the gate voltage is below a certain threshold, the channel is depleted, and the MOSFET operates in the cutoff region, resulting in no current flow.

Conclusion:
In conclusion, the principle of MOSFET operation is to control the conduction of current between the source and the drain by using the potential difference applied at the gate voltage as a control variable. This control is achieved by varying the width and conductivity of the channel, which is dependent on the gate voltage.
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The principle of the MOSFET operation is:a)Control the conduction of c...
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it depends on the length of the conductor the capacitance of the line is proportional to the length of the transmission line their effect is negligible on the performance of short having a length less than 80 km and low voltage transmission accidents of the transmission line along with the conductances forms the shunted mittens the conductance and the transmission line is because of the leakage over the surface of the conductor considered a line consisting of two conductors and be each of radius are the distance between the conductors being Des shown in the diagram below minus the potential difference between the conductors and via's work QA charge on conductor QB charge on conductor vvab pencil difference between conductor and the Epsilon minus absolute primitivity QA plus QV = 0 so that QA equals QB - equals DBA equals data equals DB equals our substituting these values and voltage equation we get the capacitance between the conductors is cab is referred to as lying to line capacitance if the two conductors are in VR oppositely charge then the potential difference between them is zero then the potential of each conductor is given by one half bath the capacitance between each conductor and point of zero potential and is capacitive CN is called the capacitance to neut or capacitance to ground capacitance cab is the combination of two equal capacity and VN series thus capacitance to neutral is twice the capacitance between the conductors IE CN equals to Cave the absolute primitivity Epsilon is given by Epsilon equals epsilono Epsilon are where epsilano is the permittivity of the free space and Epsilon or is the relative primitivity of the medium prayer capacitance reactants between one conductor and neutral capacitance of the symmetrical three phase line let a balanced system of voltage be applied to a symmetrical three-phase line shown below the phasor diagram of the three phase line with equilateral spacing is shown below take the voltage of conductor to neutral as a reference phaser the potential difference between conductor and we can be written the similarly potential difference between conductors and sea is on adding equations one and two we get also combining equation three and four from equation 6 and 7 the line to neutral capacitance the capacitance of symmetrical three phase line is same as that of the two wire line Related: Capacitance of Transmission Lines?

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The principle of the MOSFET operation is:a)Control the conduction of current between the source and the drain, using the potential difference applied at the gate voltage as a control variableb)Control the current conduction between the source and the gate, using the electric field applied at the drain voltage as a control variablec)Control the current conduction between the PN junction, using the electric field generated by the bias voltage as a control variabled)Control the current conduction between the PN junctions, using the electric potential generated by the gate voltage as a control variableCorrect answer is option 'A'. Can you explain this answer?
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