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The chemical used for shielding the active areas to achieve selective oxide growth is:
  • a)
    Silver Nitride
  • b)
    Silicon Nitride
  • c)
    Hydrofluoric acid
  • d)
    Polysilicon
Correct answer is option 'B'. Can you explain this answer?
Verified Answer
The chemical used for shielding the active areas to achieve selective ...
Selective oxide growth is achieved by shielding the active areas. Silicon nitride (Si3N4) is used for shielding the active areas during oxidation, which effectively inhibits oxide growth.
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The chemical used for shielding the active areas to achieve selective ...
Explanation:

Silicon Nitride:
- Silicon nitride is commonly used as a mask or shield during oxide growth processes in semiconductor fabrication.
- It is a chemical compound known for its excellent insulating properties and resistance to high temperatures.
- When deposited on a silicon substrate, silicon nitride acts as a barrier to prevent oxidation in specific areas, allowing for selective oxide growth in desired regions.

Role in Selective Oxide Growth:
- During the process of selective oxide growth, silicon nitride is used to shield the active areas of the silicon substrate.
- By selectively masking certain regions with silicon nitride, oxide growth can be controlled and limited to specific areas.
- This technique is crucial in the fabrication of integrated circuits, where precise control over oxide growth is essential for device performance.

Advantages of Silicon Nitride:
- Silicon nitride offers excellent chemical resistance and mechanical strength, making it a reliable material for masking applications.
- Its thermal stability allows for high-temperature processes without degradation, ensuring consistent performance during oxide growth processes.
- The use of silicon nitride as a shield enables the creation of intricate patterns and structures on silicon wafers for semiconductor devices.
In conclusion, silicon nitride plays a vital role in achieving selective oxide growth by acting as a protective barrier during semiconductor fabrication processes. Its unique properties make it an ideal choice for shielding active areas and controlling oxide growth in specific regions of a silicon substrate.
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The chemical used for shielding the active areas to achieve selective oxide growth is:a)Silver Nitrideb)Silicon Nitridec)Hydrofluoric acidd)PolysiliconCorrect answer is option 'B'. Can you explain this answer?
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