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For an n-channel enhancement type MOSFET, if the source is connected at a higher potential than that of the bulk (VSB > 0), the threshold voltage VT of the MOSFET will
  • a)
    remain unchanged
  • b)
    decrease
  • c)
    change Polarity
  • d)
    increase
Correct answer is option 'A'. Can you explain this answer?
Verified Answer
For an n-channel enhancement type MOSFET, if the source is connected a...
VT depends upon MOSFET construction, hence it will Independent from MOSFET parameters.
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Most Upvoted Answer
For an n-channel enhancement type MOSFET, if the source is connected a...
> 0), it creates a reverse-biased pn junction between the source and the bulk. This junction blocks the flow of majority carriers (electrons) from the bulk to the source, reducing the effective channel width and increasing the resistance of the device. As a result, the MOSFET may not be able to conduct current efficiently or at all, depending on the magnitude of the VSB voltage and other factors such as the gate voltage and the drain-source voltage.

In general, it is recommended to keep the source voltage below or equal to the bulk voltage (VSB ≤ 0) to avoid this reverse-bias effect and ensure proper operation of the MOSFET. However, there may be some cases where a positive VSB voltage is intentionally applied to the MOSFET to achieve certain circuit functions, such as increasing the threshold voltage or reducing the leakage current. These cases require careful consideration of the MOSFET characteristics and the overall circuit design.
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For an n-channel enhancement type MOSFET, if the source is connected at a higher potential than that of the bulk (VSB > 0), the threshold voltage VT of the MOSFET willa)remain unchangedb)decreasec)change Polarityd)increaseCorrect answer is option 'A'. Can you explain this answer?
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