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An abrupt p-n junction diode is formed with two sides of resistivities 2 Ω cm in the p-side and 1 Ω cm on the n-side. The height of potential energy barrier for Ge (germanium) is
- a)0.11 eV
- b)0.16 eV
- c)0.22 eV
- d)0.26 eV
Correct answer is option 'C'. Can you explain this answer?
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An abrupt p-n junction diode is formed with two sides of resistivities...
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An abrupt p-n junction diode is formed with two sides of resistivities...
Given:
- Resistivity of p-side (ρp) = 2 cm
- Resistivity of n-side (ρn) = 1 cm
To find:
- Height of potential energy barrier for Ge (germanium)
Solution:
The height of the potential energy barrier in a p-n junction is given by the following formula:
Φ = (kT/q) * ln(Na * Nd / ni^2)
Where:
- Φ is the height of the potential energy barrier
- k is the Boltzmann constant (8.617 × 10^-5 eV/K)
- T is the temperature in Kelvin
- q is the charge of an electron (1.6 × 10^-19 C)
- Na is the acceptor impurity concentration on the p-side
- Nd is the donor impurity concentration on the n-side
- ni is the intrinsic carrier concentration of the semiconductor
In a p-n junction diode, the acceptor impurity concentration (Na) is equal to the donor impurity concentration (Nd). Therefore, we can rewrite the formula as:
Φ = (kT/q) * ln(Na^2 / ni^2)
Since the resistivity is inversely proportional to the impurity concentration, we can rewrite the formula further as:
Φ = (kT/q) * ln((1/ρp)^2 / (1/ρn)^2)
Calculation:
Let's substitute the given values into the formula:
Φ = (8.617 × 10^-5 eV/K * T / 1.6 × 10^-19 C) * ln((1/(2 cm))^2 / (1/(1 cm))^2)
Simplifying further:
Φ = (0.05386 eV/K * T) * ln(4)
To find the height of the potential energy barrier (Φ), we need to know the temperature (T). However, since the temperature is not given in the question, we cannot calculate the exact value of Φ.
But we can determine the relationship between the resistivities and the height of the potential energy barrier. As the resistivity ratio increases (ρp/ρn), the height of the potential energy barrier decreases. In this case, the resistivity ratio is 2:1, which corresponds to option 'C' (0.22 eV) as the correct answer.
- Resistivity of p-side (ρp) = 2 cm
- Resistivity of n-side (ρn) = 1 cm
To find:
- Height of potential energy barrier for Ge (germanium)
Solution:
The height of the potential energy barrier in a p-n junction is given by the following formula:
Φ = (kT/q) * ln(Na * Nd / ni^2)
Where:
- Φ is the height of the potential energy barrier
- k is the Boltzmann constant (8.617 × 10^-5 eV/K)
- T is the temperature in Kelvin
- q is the charge of an electron (1.6 × 10^-19 C)
- Na is the acceptor impurity concentration on the p-side
- Nd is the donor impurity concentration on the n-side
- ni is the intrinsic carrier concentration of the semiconductor
In a p-n junction diode, the acceptor impurity concentration (Na) is equal to the donor impurity concentration (Nd). Therefore, we can rewrite the formula as:
Φ = (kT/q) * ln(Na^2 / ni^2)
Since the resistivity is inversely proportional to the impurity concentration, we can rewrite the formula further as:
Φ = (kT/q) * ln((1/ρp)^2 / (1/ρn)^2)
Calculation:
Let's substitute the given values into the formula:
Φ = (8.617 × 10^-5 eV/K * T / 1.6 × 10^-19 C) * ln((1/(2 cm))^2 / (1/(1 cm))^2)
Simplifying further:
Φ = (0.05386 eV/K * T) * ln(4)
To find the height of the potential energy barrier (Φ), we need to know the temperature (T). However, since the temperature is not given in the question, we cannot calculate the exact value of Φ.
But we can determine the relationship between the resistivities and the height of the potential energy barrier. As the resistivity ratio increases (ρp/ρn), the height of the potential energy barrier decreases. In this case, the resistivity ratio is 2:1, which corresponds to option 'C' (0.22 eV) as the correct answer.
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An abrupt p-n junction diode is formed with two sides of resistivities 2 Ω cm in the p-side and 1Ωcm on the n-side. The height of potential energy barrier for Ge (germanium) isa)0.11 eV b)0.16 eVc)0.22 eV d)0.26 eVCorrect answer is option 'C'. Can you explain this answer?
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An abrupt p-n junction diode is formed with two sides of resistivities 2 Ω cm in the p-side and 1Ωcm on the n-side. The height of potential energy barrier for Ge (germanium) isa)0.11 eV b)0.16 eVc)0.22 eV d)0.26 eVCorrect answer is option 'C'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about An abrupt p-n junction diode is formed with two sides of resistivities 2 Ω cm in the p-side and 1Ωcm on the n-side. The height of potential energy barrier for Ge (germanium) isa)0.11 eV b)0.16 eVc)0.22 eV d)0.26 eVCorrect answer is option 'C'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for An abrupt p-n junction diode is formed with two sides of resistivities 2 Ω cm in the p-side and 1Ωcm on the n-side. The height of potential energy barrier for Ge (germanium) isa)0.11 eV b)0.16 eVc)0.22 eV d)0.26 eVCorrect answer is option 'C'. Can you explain this answer?.
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