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For a P±n Si junction the reverse current at room temperature is 0.9 nA/cm2. If donor density is 1015 cm-3 and intrinsic carrier concentration is 1.05 × 1010. The minority carrier life time is ________ n sec.
[Assume μP = 450 cm2/V-sec, kT = 25mV ]
Correct answer is between '4,5'. Can you explain this answer?
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Verified Answer
For a P±n Si junction the reverse current at room temperature i...
For P±n junction the current density is given by
Substituting
DP = 0.025 × 450
Substituting
DP = 0.025 × 450
= 11.25
τp = 4.32 × 10-9 sec
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For a P±n Si junction the reverse current at room temperature i...
A P-value, or probability value, is a statistical measure used in hypothesis testing to determine the strength of evidence against the null hypothesis. It represents the probability of obtaining the observed data, or more extreme data, if the null hypothesis is true.
In hypothesis testing, the null hypothesis is a statement that there is no significant difference or relationship between variables, while the alternative hypothesis is a statement that there is a significant difference or relationship. The P-value helps determine whether the data provides enough evidence to reject the null hypothesis in favor of the alternative hypothesis.
To calculate the P-value, the test statistic (which depends on the specific hypothesis test being used) is compared to the distribution of the test statistic under the null hypothesis. The P-value is then determined by calculating the probability of obtaining a test statistic as extreme or more extreme than the one observed, assuming the null hypothesis is true.
If the P-value is small (typically less than a predetermined significance level, such as 0.05), it suggests strong evidence against the null hypothesis. In this case, the null hypothesis is rejected in favor of the alternative hypothesis. Conversely, if the P-value is large, it suggests weak evidence against the null hypothesis, and the null hypothesis is not rejected.
It is important to note that the P-value does not give the probability that the null hypothesis is true or false, but rather the probability of obtaining the observed data or more extreme data assuming the null hypothesis is true. Additionally, the P-value should not be interpreted as the probability of the alternative hypothesis being true.
In hypothesis testing, the null hypothesis is a statement that there is no significant difference or relationship between variables, while the alternative hypothesis is a statement that there is a significant difference or relationship. The P-value helps determine whether the data provides enough evidence to reject the null hypothesis in favor of the alternative hypothesis.
To calculate the P-value, the test statistic (which depends on the specific hypothesis test being used) is compared to the distribution of the test statistic under the null hypothesis. The P-value is then determined by calculating the probability of obtaining a test statistic as extreme or more extreme than the one observed, assuming the null hypothesis is true.
If the P-value is small (typically less than a predetermined significance level, such as 0.05), it suggests strong evidence against the null hypothesis. In this case, the null hypothesis is rejected in favor of the alternative hypothesis. Conversely, if the P-value is large, it suggests weak evidence against the null hypothesis, and the null hypothesis is not rejected.
It is important to note that the P-value does not give the probability that the null hypothesis is true or false, but rather the probability of obtaining the observed data or more extreme data assuming the null hypothesis is true. Additionally, the P-value should not be interpreted as the probability of the alternative hypothesis being true.
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For a P±n Si junction the reverse current at room temperature is 0.9 nA/cm2. If donor density is 1015cm-3and intrinsic carrier concentration is 1.05 × 1010. The minority carrier life time is ________ n sec.[Assume μP= 450 cm2/V-sec, kT = 25mV ]Correct answer is between '4,5'. Can you explain this answer?
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For a P±n Si junction the reverse current at room temperature is 0.9 nA/cm2. If donor density is 1015cm-3and intrinsic carrier concentration is 1.05 × 1010. The minority carrier life time is ________ n sec.[Assume μP= 450 cm2/V-sec, kT = 25mV ]Correct answer is between '4,5'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about For a P±n Si junction the reverse current at room temperature is 0.9 nA/cm2. If donor density is 1015cm-3and intrinsic carrier concentration is 1.05 × 1010. The minority carrier life time is ________ n sec.[Assume μP= 450 cm2/V-sec, kT = 25mV ]Correct answer is between '4,5'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for For a P±n Si junction the reverse current at room temperature is 0.9 nA/cm2. If donor density is 1015cm-3and intrinsic carrier concentration is 1.05 × 1010. The minority carrier life time is ________ n sec.[Assume μP= 450 cm2/V-sec, kT = 25mV ]Correct answer is between '4,5'. Can you explain this answer?.
For a P±n Si junction the reverse current at room temperature is 0.9 nA/cm2. If donor density is 1015cm-3and intrinsic carrier concentration is 1.05 × 1010. The minority carrier life time is ________ n sec.[Assume μP= 450 cm2/V-sec, kT = 25mV ]Correct answer is between '4,5'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about For a P±n Si junction the reverse current at room temperature is 0.9 nA/cm2. If donor density is 1015cm-3and intrinsic carrier concentration is 1.05 × 1010. The minority carrier life time is ________ n sec.[Assume μP= 450 cm2/V-sec, kT = 25mV ]Correct answer is between '4,5'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for For a P±n Si junction the reverse current at room temperature is 0.9 nA/cm2. If donor density is 1015cm-3and intrinsic carrier concentration is 1.05 × 1010. The minority carrier life time is ________ n sec.[Assume μP= 450 cm2/V-sec, kT = 25mV ]Correct answer is between '4,5'. Can you explain this answer?.
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For a P±n Si junction the reverse current at room temperature is 0.9 nA/cm2. If donor density is 1015cm-3and intrinsic carrier concentration is 1.05 × 1010. The minority carrier life time is ________ n sec.[Assume μP= 450 cm2/V-sec, kT = 25mV ]Correct answer is between '4,5'. Can you explain this answer?, a detailed solution for For a P±n Si junction the reverse current at room temperature is 0.9 nA/cm2. If donor density is 1015cm-3and intrinsic carrier concentration is 1.05 × 1010. The minority carrier life time is ________ n sec.[Assume μP= 450 cm2/V-sec, kT = 25mV ]Correct answer is between '4,5'. Can you explain this answer? has been provided alongside types of For a P±n Si junction the reverse current at room temperature is 0.9 nA/cm2. If donor density is 1015cm-3and intrinsic carrier concentration is 1.05 × 1010. The minority carrier life time is ________ n sec.[Assume μP= 450 cm2/V-sec, kT = 25mV ]Correct answer is between '4,5'. Can you explain this answer? theory, EduRev gives you an
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