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Two n-channel MOSFETs, T1 and T2, are identical in all respects except that the width of T2 is double that of T1. Both the transistors are biased in the saturation region of operation, but the gate overdrive voltage (VGS-VTH) of T2 is double that of T1, where VGS and VTH are the gate – to – source voltage and threshold voltage of the transistors, respectively. If the drain current and transconductance of T1 are ID1 and gm1 respectively, the corresponding values of these two parameters for T2 are
- a)8ID1 and 2gm1
- b)8ID1 and 4gm1
- c)4ID1 and 4gm1
- d)4ID1 and 2gm1
Correct answer is option 'B'. Can you explain this answer?
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Two n-channel MOSFETs, T1 and T2, are identical in all respects except...
Drain current in saturation is
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Two n-channel MOSFETs, T1 and T2, are identical in all respects except...
Given information:
- Two n-channel MOSFETs, T1 and T2, are identical in all respects except that the width of T2 is double that of T1.
- Both transistors are biased in the saturation region of operation.
- The gate overdrive voltage (VGS-VTH) of T2 is double that of T1, where VGS and VTH are the gate-to-source voltage and threshold voltage of the transistors, respectively.
- The drain current and transconductance of T1 are ID1 and gm1, respectively.
To find:
The corresponding values of drain current and transconductance for T2.
Solution:
1. The relation between the drain current and the width of the MOSFET:
The drain current of a MOSFET is directly proportional to its width. Therefore, if the width of T2 is double that of T1, we can write:
ID2 = 2 * ID1 (Equation 1)
2. The relation between the gate overdrive voltage and the transconductance:
The transconductance (gm) of a MOSFET is directly proportional to the gate overdrive voltage. Therefore, if the gate overdrive voltage of T2 is double that of T1, we can write:
gm2 = 2 * gm1 (Equation 2)
3. Explanation of options:
Let's evaluate the given options one by one:
a) 8ID1 and 2gm1: This option suggests that the drain current of T2 is 8 times that of T1, and the transconductance of T2 is twice that of T1. However, according to Equation 1, the drain current of T2 is only double that of T1, not 8 times. Therefore, this option is incorrect.
b) 8ID1 and 4gm1: This option suggests that the drain current of T2 is 8 times that of T1, and the transconductance of T2 is four times that of T1. According to Equations 1 and 2, both of these conditions are satisfied. Therefore, this option is correct.
c) 4ID1 and 4gm1: This option suggests that the drain current of T2 is 4 times that of T1, and the transconductance of T2 is four times that of T1. However, according to Equation 1, the drain current of T2 is only double that of T1, not 4 times. Therefore, this option is incorrect.
d) 4ID1 and 2gm1: This option suggests that the drain current of T2 is 4 times that of T1, and the transconductance of T2 is twice that of T1. However, according to Equation 1, the drain current of T2 is only double that of T1, not 4 times. Therefore, this option is incorrect.
Conclusion:
The correct answer is option 'B' which states that the corresponding values of drain current and transconductance for T2 are 8ID1 and 4gm1, respectively.
- Two n-channel MOSFETs, T1 and T2, are identical in all respects except that the width of T2 is double that of T1.
- Both transistors are biased in the saturation region of operation.
- The gate overdrive voltage (VGS-VTH) of T2 is double that of T1, where VGS and VTH are the gate-to-source voltage and threshold voltage of the transistors, respectively.
- The drain current and transconductance of T1 are ID1 and gm1, respectively.
To find:
The corresponding values of drain current and transconductance for T2.
Solution:
1. The relation between the drain current and the width of the MOSFET:
The drain current of a MOSFET is directly proportional to its width. Therefore, if the width of T2 is double that of T1, we can write:
ID2 = 2 * ID1 (Equation 1)
2. The relation between the gate overdrive voltage and the transconductance:
The transconductance (gm) of a MOSFET is directly proportional to the gate overdrive voltage. Therefore, if the gate overdrive voltage of T2 is double that of T1, we can write:
gm2 = 2 * gm1 (Equation 2)
3. Explanation of options:
Let's evaluate the given options one by one:
a) 8ID1 and 2gm1: This option suggests that the drain current of T2 is 8 times that of T1, and the transconductance of T2 is twice that of T1. However, according to Equation 1, the drain current of T2 is only double that of T1, not 8 times. Therefore, this option is incorrect.
b) 8ID1 and 4gm1: This option suggests that the drain current of T2 is 8 times that of T1, and the transconductance of T2 is four times that of T1. According to Equations 1 and 2, both of these conditions are satisfied. Therefore, this option is correct.
c) 4ID1 and 4gm1: This option suggests that the drain current of T2 is 4 times that of T1, and the transconductance of T2 is four times that of T1. However, according to Equation 1, the drain current of T2 is only double that of T1, not 4 times. Therefore, this option is incorrect.
d) 4ID1 and 2gm1: This option suggests that the drain current of T2 is 4 times that of T1, and the transconductance of T2 is twice that of T1. However, according to Equation 1, the drain current of T2 is only double that of T1, not 4 times. Therefore, this option is incorrect.
Conclusion:
The correct answer is option 'B' which states that the corresponding values of drain current and transconductance for T2 are 8ID1 and 4gm1, respectively.
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Two n-channel MOSFETs, T1 and T2, are identical in all respects except that the width of T2 is double that of T1. Both the transistors are biased in the saturation region of operation, but the gate overdrive voltage (VGS-VTH) of T2 is double that of T1, where VGS and VTH are the gate – to – source voltage and threshold voltage of the transistors, respectively. If the drain current and transconductance of T1 are ID1 and gm1 respectively, the corresponding values of these two parameters for T2 area)8ID1 and 2gm1b)8ID1 and 4gm1c)4ID1 and 4gm1d)4ID1 and 2gm1Correct answer is option 'B'. Can you explain this answer?
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Two n-channel MOSFETs, T1 and T2, are identical in all respects except that the width of T2 is double that of T1. Both the transistors are biased in the saturation region of operation, but the gate overdrive voltage (VGS-VTH) of T2 is double that of T1, where VGS and VTH are the gate – to – source voltage and threshold voltage of the transistors, respectively. If the drain current and transconductance of T1 are ID1 and gm1 respectively, the corresponding values of these two parameters for T2 area)8ID1 and 2gm1b)8ID1 and 4gm1c)4ID1 and 4gm1d)4ID1 and 2gm1Correct answer is option 'B'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about Two n-channel MOSFETs, T1 and T2, are identical in all respects except that the width of T2 is double that of T1. Both the transistors are biased in the saturation region of operation, but the gate overdrive voltage (VGS-VTH) of T2 is double that of T1, where VGS and VTH are the gate – to – source voltage and threshold voltage of the transistors, respectively. If the drain current and transconductance of T1 are ID1 and gm1 respectively, the corresponding values of these two parameters for T2 area)8ID1 and 2gm1b)8ID1 and 4gm1c)4ID1 and 4gm1d)4ID1 and 2gm1Correct answer is option 'B'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Two n-channel MOSFETs, T1 and T2, are identical in all respects except that the width of T2 is double that of T1. Both the transistors are biased in the saturation region of operation, but the gate overdrive voltage (VGS-VTH) of T2 is double that of T1, where VGS and VTH are the gate – to – source voltage and threshold voltage of the transistors, respectively. If the drain current and transconductance of T1 are ID1 and gm1 respectively, the corresponding values of these two parameters for T2 area)8ID1 and 2gm1b)8ID1 and 4gm1c)4ID1 and 4gm1d)4ID1 and 2gm1Correct answer is option 'B'. Can you explain this answer?.
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