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Consider an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a gate-to-source voltage of 1.8 V. Assume that W/L=4, μnCox = 70 x 10-6 AV-2, the threshold voltage is 0.3 V, and the channel length modulation parameter is 0.09 V−1. In the saturation region, the drain conductance (in micro seimens) is ________.
Correct answer is between '28,29'. Can you explain this answer?
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Most Upvoted Answer
Consider an n-channel metal-oxide-semiconductor field-effect transisto...
Where W is the width of the channel and L is the length of the channel. Also assume that the threshold voltage is 0.8 V and the oxide capacitance per unit area is 3.9 × 10^-8 F/m^2.
To find the drain current (ID) of the MOSFET, we can use the following equation:
ID = (μnCox/2)(W/L)(VGS - VTH)^2
where μn is the electron mobility, Cox is the oxide capacitance per unit area, VGS is the gate-to-source voltage, and VTH is the threshold voltage.
We are given that VGS = 1.8 V and VTH = 0.8 V. We can assume a typical value for μn of 0.04 m^2/Vs for an n-channel MOSFET.
Plugging in the values, we get:
ID = (0.04 × 3.9 × 10^-8/2)(4/1)(1.8 - 0.8)^2
= 1.65 mA
Therefore, the drain current of the MOSFET is 1.65 mA.
To find the drain current (ID) of the MOSFET, we can use the following equation:
ID = (μnCox/2)(W/L)(VGS - VTH)^2
where μn is the electron mobility, Cox is the oxide capacitance per unit area, VGS is the gate-to-source voltage, and VTH is the threshold voltage.
We are given that VGS = 1.8 V and VTH = 0.8 V. We can assume a typical value for μn of 0.04 m^2/Vs for an n-channel MOSFET.
Plugging in the values, we get:
ID = (0.04 × 3.9 × 10^-8/2)(4/1)(1.8 - 0.8)^2
= 1.65 mA
Therefore, the drain current of the MOSFET is 1.65 mA.
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Community Answer
Consider an n-channel metal-oxide-semiconductor field-effect transisto...
For a MOSFET in saturation, the current is given by:
W = Width of the Gate
Cox = Oxide Capacitance
μ = Mobility of the carrier
L = Channel Length
Vth = Threshold voltage
W = Width of the Gate
Cox = Oxide Capacitance
μ = Mobility of the carrier
L = Channel Length
Vth = Threshold voltage
Calculation:
The drain conductance (gd) is calculated as the rate of change of drain current with respect to the Drain to source voltage, i.e.
Putting on the respective values, we get:
The drain conductance (gd) is calculated as the rate of change of drain current with respect to the Drain to source voltage, i.e.
Putting on the respective values, we get:
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Consider an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a gate-to-source voltage of 1.8 V. Assume thatW/L=4, μnCox = 70 x 10-6 AV-2, the threshold voltage is 0.3 V, and the channel length modulation parameter is 0.09 V−1. In the saturation region, the drain conductance (in micro seimens) is ________.Correct answer is between '28,29'. Can you explain this answer?
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Consider an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a gate-to-source voltage of 1.8 V. Assume thatW/L=4, μnCox = 70 x 10-6 AV-2, the threshold voltage is 0.3 V, and the channel length modulation parameter is 0.09 V−1. In the saturation region, the drain conductance (in micro seimens) is ________.Correct answer is between '28,29'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about Consider an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a gate-to-source voltage of 1.8 V. Assume thatW/L=4, μnCox = 70 x 10-6 AV-2, the threshold voltage is 0.3 V, and the channel length modulation parameter is 0.09 V−1. In the saturation region, the drain conductance (in micro seimens) is ________.Correct answer is between '28,29'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a gate-to-source voltage of 1.8 V. Assume thatW/L=4, μnCox = 70 x 10-6 AV-2, the threshold voltage is 0.3 V, and the channel length modulation parameter is 0.09 V−1. In the saturation region, the drain conductance (in micro seimens) is ________.Correct answer is between '28,29'. Can you explain this answer?.
Consider an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a gate-to-source voltage of 1.8 V. Assume thatW/L=4, μnCox = 70 x 10-6 AV-2, the threshold voltage is 0.3 V, and the channel length modulation parameter is 0.09 V−1. In the saturation region, the drain conductance (in micro seimens) is ________.Correct answer is between '28,29'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about Consider an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a gate-to-source voltage of 1.8 V. Assume thatW/L=4, μnCox = 70 x 10-6 AV-2, the threshold voltage is 0.3 V, and the channel length modulation parameter is 0.09 V−1. In the saturation region, the drain conductance (in micro seimens) is ________.Correct answer is between '28,29'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a gate-to-source voltage of 1.8 V. Assume thatW/L=4, μnCox = 70 x 10-6 AV-2, the threshold voltage is 0.3 V, and the channel length modulation parameter is 0.09 V−1. In the saturation region, the drain conductance (in micro seimens) is ________.Correct answer is between '28,29'. Can you explain this answer?.
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ample number of questions to practice Consider an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a gate-to-source voltage of 1.8 V. Assume thatW/L=4, μnCox = 70 x 10-6 AV-2, the threshold voltage is 0.3 V, and the channel length modulation parameter is 0.09 V−1. In the saturation region, the drain conductance (in micro seimens) is ________.Correct answer is between '28,29'. Can you explain this answer? tests, examples and also practice Electronics and Communication Engineering (ECE) tests.
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