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When the gate to source voltage (VGs) of MOSFET with threshold voltage of 400mV, working in saturation is 900mV, the drain current is observed to be 1mA. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, the drain current for an applied VGs of 1500mV is___ mA
Correct answer is '4.84'. Can you explain this answer?
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To find the drain current for an applied gate-to-source voltage (VGs) of 1500mV, we can use the saturation region equation for a MOSFET:
ID = k((VGs - Vth)^2)
Where ID is the drain current, VGs is the gate-to-source voltage, Vth is the threshold voltage, and k is a constant.
Given values:
Vth = 400mV
VGs1 = 900mV
ID1 = 1mA
We can use these values to find the constant k:
1mA = k((900mV - 400mV)^2)
1mA = k(500mV)^2
1mA = k(250,000mV^2)
k = 1mA / 250,000mV^2
k = 4μA / V^2
Now we can use this value of k to find the drain current for the applied VGs of 1500mV:
ID2 = 4μA / V^2 * (1500mV - 400mV)^2
ID2 = 4μA / V^2 * (1100mV)^2
ID2 = 4μA / V^2 * 1,210,000mV^2
ID2 = 4μA * 1,210,000
ID2 = 4,840μA
ID2 = 4.84mA
Therefore, the drain current for an applied VGs of 1500mV is 4.84mA.
ID = k((VGs - Vth)^2)
Where ID is the drain current, VGs is the gate-to-source voltage, Vth is the threshold voltage, and k is a constant.
Given values:
Vth = 400mV
VGs1 = 900mV
ID1 = 1mA
We can use these values to find the constant k:
1mA = k((900mV - 400mV)^2)
1mA = k(500mV)^2
1mA = k(250,000mV^2)
k = 1mA / 250,000mV^2
k = 4μA / V^2
Now we can use this value of k to find the drain current for the applied VGs of 1500mV:
ID2 = 4μA / V^2 * (1500mV - 400mV)^2
ID2 = 4μA / V^2 * (1100mV)^2
ID2 = 4μA / V^2 * 1,210,000mV^2
ID2 = 4μA * 1,210,000
ID2 = 4,840μA
ID2 = 4.84mA
Therefore, the drain current for an applied VGs of 1500mV is 4.84mA.
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When the gate to source voltage (VGs) of MOSFET with threshold voltage of 400mV, working in saturation is 900mV, the drain current is observed to be 1mA. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, the drain current for an applied VGs of 1500mV is___mACorrect answer is '4.84'. Can you explain this answer?
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When the gate to source voltage (VGs) of MOSFET with threshold voltage of 400mV, working in saturation is 900mV, the drain current is observed to be 1mA. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, the drain current for an applied VGs of 1500mV is___mACorrect answer is '4.84'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about When the gate to source voltage (VGs) of MOSFET with threshold voltage of 400mV, working in saturation is 900mV, the drain current is observed to be 1mA. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, the drain current for an applied VGs of 1500mV is___mACorrect answer is '4.84'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for When the gate to source voltage (VGs) of MOSFET with threshold voltage of 400mV, working in saturation is 900mV, the drain current is observed to be 1mA. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, the drain current for an applied VGs of 1500mV is___mACorrect answer is '4.84'. Can you explain this answer?.
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