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For the transistor M1 in the circuit shown in the figure, μnCox= 100 μA/V 2 and (W/L ) = 10 where μn is the mobility of electron, Cox is the oxide capacitance per unit area, W is the width and L is the length.The channel length modulation coefficient is ignored. If the gate-to-source voltage VGS is 1 V to keep the transistor at the edge of saturation, then the threshold voltage of the transistor (rounded off to one decimal place) is _________V.Correct answer is '0.5'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about For the transistor M1 in the circuit shown in the figure, μnCox= 100 μA/V 2 and (W/L ) = 10 where μn is the mobility of electron, Cox is the oxide capacitance per unit area, W is the width and L is the length.The channel length modulation coefficient is ignored. If the gate-to-source voltage VGS is 1 V to keep the transistor at the edge of saturation, then the threshold voltage of the transistor (rounded off to one decimal place) is _________V.Correct answer is '0.5'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for For the transistor M1 in the circuit shown in the figure, μnCox= 100 μA/V 2 and (W/L ) = 10 where μn is the mobility of electron, Cox is the oxide capacitance per unit area, W is the width and L is the length.The channel length modulation coefficient is ignored. If the gate-to-source voltage VGS is 1 V to keep the transistor at the edge of saturation, then the threshold voltage of the transistor (rounded off to one decimal place) is _________V.Correct answer is '0.5'. Can you explain this answer?.

Solutions for For the transistor M1 in the circuit shown in the figure, μnCox= 100 μA/V 2 and (W/L ) = 10 where μn is the mobility of electron, Cox is the oxide capacitance per unit area, W is the width and L is the length.The channel length modulation coefficient is ignored. If the gate-to-source voltage VGS is 1 V to keep the transistor at the edge of saturation, then the threshold voltage of the transistor (rounded off to one decimal place) is _________V.Correct answer is '0.5'. Can you explain this answer? in English & in Hindi are available as part of our courses for Electronics and Communication Engineering (ECE). Download more important topics, notes, lectures and mock test series for Electronics and Communication Engineering (ECE) Exam by signing up for free.

Here you can find the meaning of For the transistor M1 in the circuit shown in the figure, μnCox= 100 μA/V 2 and (W/L ) = 10 where μn is the mobility of electron, Cox is the oxide capacitance per unit area, W is the width and L is the length.The channel length modulation coefficient is ignored. If the gate-to-source voltage VGS is 1 V to keep the transistor at the edge of saturation, then the threshold voltage of the transistor (rounded off to one decimal place) is _________V.Correct answer is '0.5'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of For the transistor M1 in the circuit shown in the figure, μnCox= 100 μA/V 2 and (W/L ) = 10 where μn is the mobility of electron, Cox is the oxide capacitance per unit area, W is the width and L is the length.The channel length modulation coefficient is ignored. If the gate-to-source voltage VGS is 1 V to keep the transistor at the edge of saturation, then the threshold voltage of the transistor (rounded off to one decimal place) is _________V.Correct answer is '0.5'. Can you explain this answer?, a detailed solution for For the transistor M1 in the circuit shown in the figure, μnCox= 100 μA/V 2 and (W/L ) = 10 where μn is the mobility of electron, Cox is the oxide capacitance per unit area, W is the width and L is the length.The channel length modulation coefficient is ignored. If the gate-to-source voltage VGS is 1 V to keep the transistor at the edge of saturation, then the threshold voltage of the transistor (rounded off to one decimal place) is _________V.Correct answer is '0.5'. Can you explain this answer? has been provided alongside types of For the transistor M1 in the circuit shown in the figure, μnCox= 100 μA/V 2 and (W/L ) = 10 where μn is the mobility of electron, Cox is the oxide capacitance per unit area, W is the width and L is the length.The channel length modulation coefficient is ignored. If the gate-to-source voltage VGS is 1 V to keep the transistor at the edge of saturation, then the threshold voltage of the transistor (rounded off to one decimal place) is _________V.Correct answer is '0.5'. Can you explain this answer? theory, EduRev gives you an ample number of questions to practice For the transistor M1 in the circuit shown in the figure, μnCox= 100 μA/V 2 and (W/L ) = 10 where μn is the mobility of electron, Cox is the oxide capacitance per unit area, W is the width and L is the length.The channel length modulation coefficient is ignored. If the gate-to-source voltage VGS is 1 V to keep the transistor at the edge of saturation, then the threshold voltage of the transistor (rounded off to one decimal place) is _________V.Correct answer is '0.5'. Can you explain this answer? tests, examples and also practice Electronics and Communication Engineering (ECE) tests.