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Barrier potential of a P-N junction diode does not depend on
  • a)
    Temperature
  • b)
    Forward bias
  • c)
    Doping density
  • d)
    Diode design
Correct answer is option 'D'. Can you explain this answer?
Most Upvoted Answer
Barrier potential of a P-N junction diode does not depend ona)Temperat...
Barrier potential of a p-n junction diode does not depend on the diode design but it depends on the other factors such as doping density, temperature, forward bias, etc.,

The potential difference required to carry/move the electrons through the electric field is called the "potential barrier". The barrier potential depends upon the semiconductor material, amount of doping, voltage (forward bias), temperature. It should be approximately 0.7V for silicon and 0.3V for germanium.

The diode design does not effect the potential barrier and hence it does not depend on it.

(solution from Brainly, can refer for other doubts! :) )
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