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With reference to the Gallium nitride (GaN), consider the following statements:
1. It is a very hard, mechanically stable wide bandgap semiconductor.
2. Gallium nitride crystals can be grown on a variety of substrates, including sapphire, silicon carbide (SiC) and silicon (Si).
Which of the statements given above is/are correct?
- a)1 only
- b)2 only
- c)Both 1 and 2
- d)Neither 1 nor 2
Correct answer is option 'C'. Can you explain this answer?
Most Upvoted Answer
With reference to the Gallium nitride (GaN), consider the following st...
Union Minister of Electronics & Information Technology visited the Gallium Nitride Ecosystem Enabling Centre and Incubator ( GEECI ) facility at the prestigious Indian Institute of Sciences (IISc), Bengaluru.
- The facility has been jointly set up by Ministry of Electronics and Information Technology and IISc Bengaluru aimed at establishing Gallium Nitride (GaN) based Development Line Foundry facility for strategic applications.
- Gallium nitride (GaN) is a very hard, mechanically stable wide bandgap semiconductor.
- With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices.
- Gallium nitride crystals can be grown on a variety of substrates, including sapphire, silicon carbide (SiC) and silicon (Si).
Hence both statements are correct.
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With reference to the Gallium nitride (GaN), consider the following st...
Explanation:
Statement 1:
- Gallium nitride (GaN) is indeed a very hard and mechanically stable wide bandgap semiconductor.
- GaN has a wide bandgap of 3.4 eV, making it suitable for high-power and high-frequency devices.
- Its mechanical stability allows GaN to be used in various applications, including power electronics, RF amplifiers, and LEDs.
Statement 2:
- Gallium nitride crystals can be grown on a variety of substrates, including sapphire, silicon carbide (SiC), and silicon (Si).
- GaN can be grown using techniques such as metal-organic chemical vapor deposition (MOCVD) or hydride vapor phase epitaxy (HVPE) on these substrates.
- The choice of substrate can impact the performance and characteristics of the GaN material.
Therefore, both statements 1 and 2 are correct as they accurately describe the properties and growth capabilities of Gallium nitride (GaN).
Statement 1:
- Gallium nitride (GaN) is indeed a very hard and mechanically stable wide bandgap semiconductor.
- GaN has a wide bandgap of 3.4 eV, making it suitable for high-power and high-frequency devices.
- Its mechanical stability allows GaN to be used in various applications, including power electronics, RF amplifiers, and LEDs.
Statement 2:
- Gallium nitride crystals can be grown on a variety of substrates, including sapphire, silicon carbide (SiC), and silicon (Si).
- GaN can be grown using techniques such as metal-organic chemical vapor deposition (MOCVD) or hydride vapor phase epitaxy (HVPE) on these substrates.
- The choice of substrate can impact the performance and characteristics of the GaN material.
Therefore, both statements 1 and 2 are correct as they accurately describe the properties and growth capabilities of Gallium nitride (GaN).
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With reference to the Gallium nitride (GaN), consider the following statements:1. It is a very hard, mechanically stable wide bandgap semiconductor.2. Gallium nitride crystals can be grown on a variety of substrates, including sapphire, silicon carbide (SiC) and silicon (Si).Which of the statements given above is/are correct?a)1 onlyb)2 onlyc)Both 1 and 2d)Neither 1 nor 2Correct answer is option 'C'. Can you explain this answer?
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With reference to the Gallium nitride (GaN), consider the following statements:1. It is a very hard, mechanically stable wide bandgap semiconductor.2. Gallium nitride crystals can be grown on a variety of substrates, including sapphire, silicon carbide (SiC) and silicon (Si).Which of the statements given above is/are correct?a)1 onlyb)2 onlyc)Both 1 and 2d)Neither 1 nor 2Correct answer is option 'C'. Can you explain this answer? for UPSC 2025 is part of UPSC preparation. The Question and answers have been prepared according to the UPSC exam syllabus. Information about With reference to the Gallium nitride (GaN), consider the following statements:1. It is a very hard, mechanically stable wide bandgap semiconductor.2. Gallium nitride crystals can be grown on a variety of substrates, including sapphire, silicon carbide (SiC) and silicon (Si).Which of the statements given above is/are correct?a)1 onlyb)2 onlyc)Both 1 and 2d)Neither 1 nor 2Correct answer is option 'C'. Can you explain this answer? covers all topics & solutions for UPSC 2025 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for With reference to the Gallium nitride (GaN), consider the following statements:1. It is a very hard, mechanically stable wide bandgap semiconductor.2. Gallium nitride crystals can be grown on a variety of substrates, including sapphire, silicon carbide (SiC) and silicon (Si).Which of the statements given above is/are correct?a)1 onlyb)2 onlyc)Both 1 and 2d)Neither 1 nor 2Correct answer is option 'C'. Can you explain this answer?.
With reference to the Gallium nitride (GaN), consider the following statements:1. It is a very hard, mechanically stable wide bandgap semiconductor.2. Gallium nitride crystals can be grown on a variety of substrates, including sapphire, silicon carbide (SiC) and silicon (Si).Which of the statements given above is/are correct?a)1 onlyb)2 onlyc)Both 1 and 2d)Neither 1 nor 2Correct answer is option 'C'. Can you explain this answer? for UPSC 2025 is part of UPSC preparation. The Question and answers have been prepared according to the UPSC exam syllabus. Information about With reference to the Gallium nitride (GaN), consider the following statements:1. It is a very hard, mechanically stable wide bandgap semiconductor.2. Gallium nitride crystals can be grown on a variety of substrates, including sapphire, silicon carbide (SiC) and silicon (Si).Which of the statements given above is/are correct?a)1 onlyb)2 onlyc)Both 1 and 2d)Neither 1 nor 2Correct answer is option 'C'. Can you explain this answer? covers all topics & solutions for UPSC 2025 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for With reference to the Gallium nitride (GaN), consider the following statements:1. It is a very hard, mechanically stable wide bandgap semiconductor.2. Gallium nitride crystals can be grown on a variety of substrates, including sapphire, silicon carbide (SiC) and silicon (Si).Which of the statements given above is/are correct?a)1 onlyb)2 onlyc)Both 1 and 2d)Neither 1 nor 2Correct answer is option 'C'. Can you explain this answer?.
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