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An n–type silicon sample of 10–3 m length and 10–10 m2 cross sectional area has an impurity concentration of 5 × 1020 atom/m3. If mobility of majority carries is 0.125 m2/v-sec, then the resistance of the sample will be ________.
  • a)
    4 MΩ
  • b)
    1 MΩ
  • c)
    25 MΩ
  • d)
    5 MΩ
Correct answer is option 'B'. Can you explain this answer?
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An n–type silicon sample of 10–3m length and 10–10m2...
-gram is a sequence of n items from a given sample space or set of possible values. For example, in the English language, a 2-gram or bigram is a sequence of two consecutive words, such as "the cat" or "cat in", while a 3-gram or trigram is a sequence of three consecutive words, such as "the cat in" or "cat in the". N-grams are commonly used in natural language processing, text mining, and machine learning applications to analyze and generate text, identify patterns, and make predictions based on previous occurrences. The choice of n depends on the specific task and the size and complexity of the data.
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An n–type silicon sample of 10–3m length and 10–10m2...
Concept:
The conductivity of the silicon sample is given by σ 
⇒ σ = n q μn,
Here,
  • n is the impurity concentration
  • μ is the mobility of electrons
  • q is the electronic charge in coulomb
The resistance of the silicon sample is given by
⇒ R = ρL/A   
Here, 
  • L is the length of the sample
  • A is the cross-sectional area of the sample
  • ρ is the resistivity of the sample
Calculation
Given:
n = 5 × 1020 atom/m3, μn = 0.125 m2/v-sec, q = 1.6 × 10-19 C
⇒ σ = ( 5 × 1020) × (1.6 × 10-19) × (0.125)
⇒ σ = 10 
Therefore Resistivity (ρ) = 1/σ = 0.1
Also given: L = 10–3 m, A = 10–10 m2
⇒ R = 106 Ω = 1MΩ 
Hence the resistance of the silicon sample is 1MΩ 
Therefore the correct answer is option b. 
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An n–type silicon sample of 10–3m length and 10–10m2cross sectional area has an impurity concentration of 5 × 1020atom/m3. If mobility of majority carries is 0.125 m2/v-sec, then the resistance of the sample will be ________.a)4 Mb)1 Mc)25 Md)5 MCorrect answer is option 'B'. Can you explain this answer?
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An n–type silicon sample of 10–3m length and 10–10m2cross sectional area has an impurity concentration of 5 × 1020atom/m3. If mobility of majority carries is 0.125 m2/v-sec, then the resistance of the sample will be ________.a)4 Mb)1 Mc)25 Md)5 MCorrect answer is option 'B'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about An n–type silicon sample of 10–3m length and 10–10m2cross sectional area has an impurity concentration of 5 × 1020atom/m3. If mobility of majority carries is 0.125 m2/v-sec, then the resistance of the sample will be ________.a)4 Mb)1 Mc)25 Md)5 MCorrect answer is option 'B'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for An n–type silicon sample of 10–3m length and 10–10m2cross sectional area has an impurity concentration of 5 × 1020atom/m3. If mobility of majority carries is 0.125 m2/v-sec, then the resistance of the sample will be ________.a)4 Mb)1 Mc)25 Md)5 MCorrect answer is option 'B'. Can you explain this answer?.
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