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For a Si, one sided abrupt junction with NA = 2 × 1019/cm3 & ND = 8×1015/cm3 & ni = 9.65×109/cm3. The junction capacitance at zero bias is ______(in mF/cm2). Given, εr = 11.7
- a)0.68
- b)0.72
Correct answer is between '0.68,0.72'. Can you explain this answer?
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For a Si, one sided abrupt junction with NA = 2 × 1019/cm3 & ND = 8×1...
A Si (silicon) one-sided abrupt junction with NA = 2 × 10^19/cm^3 means that the doping concentration on one side of the junction is 2 × 10^19 atoms/cm^3. In this case, the silicon is doped with acceptor atoms (denoted by A), which means that it has a p-type conductivity.
The one-sided abrupt junction refers to the abrupt change in doping concentration from one side of the junction to the other. In this case, the junction is abrupt, meaning that the change in doping concentration happens suddenly at the junction interface.
This type of junction can be used in semiconductor devices such as diodes and transistors. The abrupt change in doping concentration creates a depletion region at the junction, which allows for the control of current flow in the device.
It's important to note that in a Si one-sided abrupt junction, there is only one side of the junction that has a significant doping concentration. The other side is typically lightly doped or undoped, creating a high-low doping concentration profile.
The one-sided abrupt junction refers to the abrupt change in doping concentration from one side of the junction to the other. In this case, the junction is abrupt, meaning that the change in doping concentration happens suddenly at the junction interface.
This type of junction can be used in semiconductor devices such as diodes and transistors. The abrupt change in doping concentration creates a depletion region at the junction, which allows for the control of current flow in the device.
It's important to note that in a Si one-sided abrupt junction, there is only one side of the junction that has a significant doping concentration. The other side is typically lightly doped or undoped, creating a high-low doping concentration profile.
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For a Si, one sided abrupt junction with NA = 2 × 1019/cm3 & ND = 8×1...
= 0.906 V
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For a Si, one sided abrupt junction with NA = 2 × 1019/cm3 & ND = 8×1015/cm3 & ni = 9.65×109/cm3. The junction capacitance at zero bias is ______(in mF/cm2). Given, εr = 11.7a)0.68b)0.72Correct answer is between '0.68,0.72'. Can you explain this answer?
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For a Si, one sided abrupt junction with NA = 2 × 1019/cm3 & ND = 8×1015/cm3 & ni = 9.65×109/cm3. The junction capacitance at zero bias is ______(in mF/cm2). Given, εr = 11.7a)0.68b)0.72Correct answer is between '0.68,0.72'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about For a Si, one sided abrupt junction with NA = 2 × 1019/cm3 & ND = 8×1015/cm3 & ni = 9.65×109/cm3. The junction capacitance at zero bias is ______(in mF/cm2). Given, εr = 11.7a)0.68b)0.72Correct answer is between '0.68,0.72'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for For a Si, one sided abrupt junction with NA = 2 × 1019/cm3 & ND = 8×1015/cm3 & ni = 9.65×109/cm3. The junction capacitance at zero bias is ______(in mF/cm2). Given, εr = 11.7a)0.68b)0.72Correct answer is between '0.68,0.72'. Can you explain this answer?.
For a Si, one sided abrupt junction with NA = 2 × 1019/cm3 & ND = 8×1015/cm3 & ni = 9.65×109/cm3. The junction capacitance at zero bias is ______(in mF/cm2). Given, εr = 11.7a)0.68b)0.72Correct answer is between '0.68,0.72'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about For a Si, one sided abrupt junction with NA = 2 × 1019/cm3 & ND = 8×1015/cm3 & ni = 9.65×109/cm3. The junction capacitance at zero bias is ______(in mF/cm2). Given, εr = 11.7a)0.68b)0.72Correct answer is between '0.68,0.72'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for For a Si, one sided abrupt junction with NA = 2 × 1019/cm3 & ND = 8×1015/cm3 & ni = 9.65×109/cm3. The junction capacitance at zero bias is ______(in mF/cm2). Given, εr = 11.7a)0.68b)0.72Correct answer is between '0.68,0.72'. Can you explain this answer?.
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