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Consider the below DTL NAND gate with A, B, C at logic 1 and the BJT Q is in saturation with = 0.8 V, = 0.2 V and hFE = 30. If all the diodes have forward conducting voltage of 0.7 V, then what will be the fan-out of the DTL NAND gate?(Answer up to the nearest integer)Correct answer is '12'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about Consider the below DTL NAND gate with A, B, C at logic 1 and the BJT Q is in saturation with = 0.8 V, = 0.2 V and hFE = 30. If all the diodes have forward conducting voltage of 0.7 V, then what will be the fan-out of the DTL NAND gate?(Answer up to the nearest integer)Correct answer is '12'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider the below DTL NAND gate with A, B, C at logic 1 and the BJT Q is in saturation with = 0.8 V, = 0.2 V and hFE = 30. If all the diodes have forward conducting voltage of 0.7 V, then what will be the fan-out of the DTL NAND gate?(Answer up to the nearest integer)Correct answer is '12'. Can you explain this answer?.

Solutions for Consider the below DTL NAND gate with A, B, C at logic 1 and the BJT Q is in saturation with = 0.8 V, = 0.2 V and hFE = 30. If all the diodes have forward conducting voltage of 0.7 V, then what will be the fan-out of the DTL NAND gate?(Answer up to the nearest integer)Correct answer is '12'. Can you explain this answer? in English & in Hindi are available as part of our courses for Electronics and Communication Engineering (ECE). Download more important topics, notes, lectures and mock test series for Electronics and Communication Engineering (ECE) Exam by signing up for free.

Here you can find the meaning of Consider the below DTL NAND gate with A, B, C at logic 1 and the BJT Q is in saturation with = 0.8 V, = 0.2 V and hFE = 30. If all the diodes have forward conducting voltage of 0.7 V, then what will be the fan-out of the DTL NAND gate?(Answer up to the nearest integer)Correct answer is '12'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of Consider the below DTL NAND gate with A, B, C at logic 1 and the BJT Q is in saturation with = 0.8 V, = 0.2 V and hFE = 30. If all the diodes have forward conducting voltage of 0.7 V, then what will be the fan-out of the DTL NAND gate?(Answer up to the nearest integer)Correct answer is '12'. Can you explain this answer?, a detailed solution for Consider the below DTL NAND gate with A, B, C at logic 1 and the BJT Q is in saturation with = 0.8 V, = 0.2 V and hFE = 30. If all the diodes have forward conducting voltage of 0.7 V, then what will be the fan-out of the DTL NAND gate?(Answer up to the nearest integer)Correct answer is '12'. Can you explain this answer? has been provided alongside types of Consider the below DTL NAND gate with A, B, C at logic 1 and the BJT Q is in saturation with = 0.8 V, = 0.2 V and hFE = 30. If all the diodes have forward conducting voltage of 0.7 V, then what will be the fan-out of the DTL NAND gate?(Answer up to the nearest integer)Correct answer is '12'. Can you explain this answer? theory, EduRev gives you an ample number of questions to practice Consider the below DTL NAND gate with A, B, C at logic 1 and the BJT Q is in saturation with = 0.8 V, = 0.2 V and hFE = 30. If all the diodes have forward conducting voltage of 0.7 V, then what will be the fan-out of the DTL NAND gate?(Answer up to the nearest integer)Correct answer is '12'. Can you explain this answer? tests, examples and also practice Electronics and Communication Engineering (ECE) tests.