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An intrinsic semiconductor bar of Si is doped with donor type impurity to the extent of 1 atom per 108 silicon atoms, then the resistivity of silicon crystal will be (atomic density of Si crystals = 5×1022 atoms /cm3 and μn=1300cm2N−sec )Correct answer is '9.61'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about An intrinsic semiconductor bar of Si is doped with donor type impurity to the extent of 1 atom per 108 silicon atoms, then the resistivity of silicon crystal will be (atomic density of Si crystals = 5×1022 atoms /cm3 and μn=1300cm2N−sec )Correct answer is '9.61'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for An intrinsic semiconductor bar of Si is doped with donor type impurity to the extent of 1 atom per 108 silicon atoms, then the resistivity of silicon crystal will be (atomic density of Si crystals = 5×1022 atoms /cm3 and μn=1300cm2N−sec )Correct answer is '9.61'. Can you explain this answer?.

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