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Silicon is not suitable for fabrication of light emitting diodes because it is:
- a)An indirect band gap semiconductor
- b)A direct band gap semiconductor
- c)A wide band gap semiconductor
- d)A narrow band gap semiconductor
Correct answer is option 'A'. Can you explain this answer?
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Silicon is not suitable for fabrication of light emitting diodes becau...
Indirect Band Gap Semiconductor:
Indirect band gap semiconductors like silicon have a band structure where the minimum energy of the conduction band and the maximum energy of the valence band do not occur at the same momentum value in the Brillouin zone. This leads to inefficient radiative recombination of electrons and holes, resulting in low emission efficiency.
Light Emitting Diodes (LEDs):
LEDs require a direct band gap semiconductor material to efficiently emit light. In direct band gap materials, the minimum energy of the conduction band and the maximum energy of the valence band occur at the same momentum value, allowing for efficient radiative recombination and light emission.
Silicon as a Semiconductor:
Silicon is a widely used semiconductor material due to its abundance and well-established fabrication processes. However, its indirect band gap nature makes it unsuitable for applications where efficient light emission is required, such as in LEDs.
Alternative Materials for LEDs:
Materials like gallium nitride (GaN) and indium gallium nitride (InGaN) are commonly used in LED fabrication due to their direct band gap properties, allowing for efficient light emission. These materials have revolutionized the lighting industry by enabling the development of high-brightness LEDs for various applications.
Indirect band gap semiconductors like silicon have a band structure where the minimum energy of the conduction band and the maximum energy of the valence band do not occur at the same momentum value in the Brillouin zone. This leads to inefficient radiative recombination of electrons and holes, resulting in low emission efficiency.
Light Emitting Diodes (LEDs):
LEDs require a direct band gap semiconductor material to efficiently emit light. In direct band gap materials, the minimum energy of the conduction band and the maximum energy of the valence band occur at the same momentum value, allowing for efficient radiative recombination and light emission.
Silicon as a Semiconductor:
Silicon is a widely used semiconductor material due to its abundance and well-established fabrication processes. However, its indirect band gap nature makes it unsuitable for applications where efficient light emission is required, such as in LEDs.
Alternative Materials for LEDs:
Materials like gallium nitride (GaN) and indium gallium nitride (InGaN) are commonly used in LED fabrication due to their direct band gap properties, allowing for efficient light emission. These materials have revolutionized the lighting industry by enabling the development of high-brightness LEDs for various applications.
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Silicon is not suitable for fabrication of light emitting diodes becau...
Basic LED diode is represented as:
- The selection of emission of color from the LED is fairly limited due to the nature of the semiconductor used.
- Commonly available colors of LED are red, green, blue, yellow, amber, and white.
- Light Emitting Diode (LED) works on the principle of Electroluminescence.
- It is the conversion of electrical energy into light energy.
- In LED, most of the light is concentrated near the junction because charge carriers will be very close and less than the diffusion length.
- LEDs are generally fabricated with Direct Band Gap (DBG) semiconductors like GaAs, GaAsP, GaP.
Direct Band Gap (DBG) Semiconductors:
The semiconductor in which the top of the valence band and the bottom of the conduction band occur at the same value of momentum.
Since Silicon is an Indirect Band Gap semiconductor so electron cannot fall directly to the valence band but must undergo a momentum change as well as a change in energy. So, energy is released as heat along with light. Hence, silicon is not suitable for the fabrication of LEDs.
The semiconductor in which the top of the valence band and the bottom of the conduction band occur at the same value of momentum.
Since Silicon is an Indirect Band Gap semiconductor so electron cannot fall directly to the valence band but must undergo a momentum change as well as a change in energy. So, energy is released as heat along with light. Hence, silicon is not suitable for the fabrication of LEDs.
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Silicon is not suitable for fabrication of light emitting diodes because it is:a)An indirect band gap semiconductorb)A direct band gap semiconductorc)A wide band gap semiconductord)A narrow band gap semiconductorCorrect answer is option 'A'. Can you explain this answer?
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