Electronics and Communication Engineering (ECE) Exam > Electronics and Communication Engineering (ECE) Questions > A pure silicon crystal with recombination con...
Start Learning for Free
A pure silicon crystal with recombination constant αT has rate of recombination of 4.3 × 105 (cm3-sec)-1. The intrinsic carrier concentration is 1.5 × 1010 cm-3. A dopant with concentration 4.7 × 1016 cm-3 is added then the new constant of recombination at equilibrium is ________ × 10-15 s-1
Correct answer is between '1.9,1.93'. Can you explain this answer?
| FREE This question is part of | Download PDF Attempt this Test |
Most Upvoted Answer
A pure silicon crystal with recombination constant αT has rate o...
In order to determine the recombination constant of a pure silicon crystal, we need more information about the specific type of recombination being considered. Recombination in semiconductors can occur through several mechanisms such as Shockley-Read-Hall recombination, Auger recombination, or radiative recombination.
Each of these mechanisms has a different recombination constant, so without more information, it is not possible to provide a specific value for the recombination constant of a pure silicon crystal. Additionally, the recombination constant can also depend on the doping level and temperature of the crystal.
If you can provide more details about the specific recombination mechanism or conditions, I can try to provide a more accurate answer.
Each of these mechanisms has a different recombination constant, so without more information, it is not possible to provide a specific value for the recombination constant of a pure silicon crystal. Additionally, the recombination constant can also depend on the doping level and temperature of the crystal.
If you can provide more details about the specific recombination mechanism or conditions, I can try to provide a more accurate answer.
Free Test
Community Answer
A pure silicon crystal with recombination constant αT has rate o...
At equilibrium recombination rate R = carrier generation rate G
i.e. R = G = αTnp = αTni2
Even in extrinsic semiconductors, the equilibrium concentration of product np is the same hence αT will remain constant.
i.e. R = G = αTnp = αTni2
Even in extrinsic semiconductors, the equilibrium concentration of product np is the same hence αT will remain constant.
Attention Electronics and Communication Engineering (ECE) Students!
To make sure you are not studying endlessly, EduRev has designed Electronics and Communication Engineering (ECE) study material, with Structured Courses, Videos, & Test Series. Plus get personalized analysis, doubt solving and improvement plans to achieve a great score in Electronics and Communication Engineering (ECE).
|
Explore Courses for Electronics and Communication Engineering (ECE) exam
|
|
Similar Electronics and Communication Engineering (ECE) Doubts
Top Courses for Electronics and Communication Engineering (ECE)View all
A pure silicon crystal with recombination constant αT has rate of recombination of 4.3 × 105 (cm3-sec)-1. The intrinsic carrier concentration is 1.5 × 1010 cm-3. A dopant with concentration 4.7 × 1016 cm-3 is added then the new constant of recombination at equilibrium is ________ × 10-15 s-1Correct answer is between '1.9,1.93'. Can you explain this answer?
Question Description
A pure silicon crystal with recombination constant αT has rate of recombination of 4.3 × 105 (cm3-sec)-1. The intrinsic carrier concentration is 1.5 × 1010 cm-3. A dopant with concentration 4.7 × 1016 cm-3 is added then the new constant of recombination at equilibrium is ________ × 10-15 s-1Correct answer is between '1.9,1.93'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about A pure silicon crystal with recombination constant αT has rate of recombination of 4.3 × 105 (cm3-sec)-1. The intrinsic carrier concentration is 1.5 × 1010 cm-3. A dopant with concentration 4.7 × 1016 cm-3 is added then the new constant of recombination at equilibrium is ________ × 10-15 s-1Correct answer is between '1.9,1.93'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for A pure silicon crystal with recombination constant αT has rate of recombination of 4.3 × 105 (cm3-sec)-1. The intrinsic carrier concentration is 1.5 × 1010 cm-3. A dopant with concentration 4.7 × 1016 cm-3 is added then the new constant of recombination at equilibrium is ________ × 10-15 s-1Correct answer is between '1.9,1.93'. Can you explain this answer?.
A pure silicon crystal with recombination constant αT has rate of recombination of 4.3 × 105 (cm3-sec)-1. The intrinsic carrier concentration is 1.5 × 1010 cm-3. A dopant with concentration 4.7 × 1016 cm-3 is added then the new constant of recombination at equilibrium is ________ × 10-15 s-1Correct answer is between '1.9,1.93'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about A pure silicon crystal with recombination constant αT has rate of recombination of 4.3 × 105 (cm3-sec)-1. The intrinsic carrier concentration is 1.5 × 1010 cm-3. A dopant with concentration 4.7 × 1016 cm-3 is added then the new constant of recombination at equilibrium is ________ × 10-15 s-1Correct answer is between '1.9,1.93'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for A pure silicon crystal with recombination constant αT has rate of recombination of 4.3 × 105 (cm3-sec)-1. The intrinsic carrier concentration is 1.5 × 1010 cm-3. A dopant with concentration 4.7 × 1016 cm-3 is added then the new constant of recombination at equilibrium is ________ × 10-15 s-1Correct answer is between '1.9,1.93'. Can you explain this answer?.
Solutions for A pure silicon crystal with recombination constant αT has rate of recombination of 4.3 × 105 (cm3-sec)-1. The intrinsic carrier concentration is 1.5 × 1010 cm-3. A dopant with concentration 4.7 × 1016 cm-3 is added then the new constant of recombination at equilibrium is ________ × 10-15 s-1Correct answer is between '1.9,1.93'. Can you explain this answer? in English & in Hindi are available as part of our courses for Electronics and Communication Engineering (ECE).
Download more important topics, notes, lectures and mock test series for Electronics and Communication Engineering (ECE) Exam by signing up for free.
Here you can find the meaning of A pure silicon crystal with recombination constant αT has rate of recombination of 4.3 × 105 (cm3-sec)-1. The intrinsic carrier concentration is 1.5 × 1010 cm-3. A dopant with concentration 4.7 × 1016 cm-3 is added then the new constant of recombination at equilibrium is ________ × 10-15 s-1Correct answer is between '1.9,1.93'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of
A pure silicon crystal with recombination constant αT has rate of recombination of 4.3 × 105 (cm3-sec)-1. The intrinsic carrier concentration is 1.5 × 1010 cm-3. A dopant with concentration 4.7 × 1016 cm-3 is added then the new constant of recombination at equilibrium is ________ × 10-15 s-1Correct answer is between '1.9,1.93'. Can you explain this answer?, a detailed solution for A pure silicon crystal with recombination constant αT has rate of recombination of 4.3 × 105 (cm3-sec)-1. The intrinsic carrier concentration is 1.5 × 1010 cm-3. A dopant with concentration 4.7 × 1016 cm-3 is added then the new constant of recombination at equilibrium is ________ × 10-15 s-1Correct answer is between '1.9,1.93'. Can you explain this answer? has been provided alongside types of A pure silicon crystal with recombination constant αT has rate of recombination of 4.3 × 105 (cm3-sec)-1. The intrinsic carrier concentration is 1.5 × 1010 cm-3. A dopant with concentration 4.7 × 1016 cm-3 is added then the new constant of recombination at equilibrium is ________ × 10-15 s-1Correct answer is between '1.9,1.93'. Can you explain this answer? theory, EduRev gives you an
ample number of questions to practice A pure silicon crystal with recombination constant αT has rate of recombination of 4.3 × 105 (cm3-sec)-1. The intrinsic carrier concentration is 1.5 × 1010 cm-3. A dopant with concentration 4.7 × 1016 cm-3 is added then the new constant of recombination at equilibrium is ________ × 10-15 s-1Correct answer is between '1.9,1.93'. Can you explain this answer? tests, examples and also practice Electronics and Communication Engineering (ECE) tests.
|
|
Explore Courses for Electronics and Communication Engineering (ECE) exam
|
|
Suggested Free Tests
Signup for Free!
Signup to see your scores go up within 7 days! Learn & Practice with 1000+ FREE Notes, Videos & Tests.
x
![]()
For Your Perfect Score in Electronics and Communication Engineering (ECE)
The Best you need at One Place
|
© EduRev
|
Education Revolution
|
Follow Us
|
Signup to see your scores
go up within 7 days!
Access 1000+ FREE Docs, Videos and Tests
Takes less than 10 seconds to signup