Electrical Engineering (EE) Exam > Electrical Engineering (EE) Questions > In a p-n junction diode under reverse bias, t...
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In a p-n junction diode under reverse bias, the magnitude of electric field is maximum at
- a)the edge of the depletion region on the pside
- b)the edge of the depletion region on the nside
- c)the p-n junction
- d)the centre of the depletion region on the n-side
Correct answer is option 'C'. Can you explain this answer?
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In a p-n junction diode under reverse bias, the magnitude of electric ...
The Electric Field in a Reverse-Biased p-n Junction Diode
In a reverse-biased p-n junction diode, the behavior of the electric field is crucial to understanding its operation.
Depletion Region Formation
- When the diode is reverse-biased, the external voltage causes the majority charge carriers (holes in p-type and electrons in n-type) to move away from the junction.
- This movement leads to the widening of the depletion region, which is devoid of free charge carriers.
Electric Field Characteristics
- The electric field (E) in the depletion region is established due to the ionized dopants left behind (positive ions in n-side and negative ions in p-side).
- The electric field points from the n-side to the p-side, opposing the applied reverse bias.
Maximum Electric Field Location
- The electric field is not uniform across the depletion region; it varies with distance from the junction.
- The maximum electric field strength occurs at the junction itself (option C).
- This is because the field strength is a result of the concentration of ionized charge, which is highest at the junction where the p-type and n-type materials meet.
Conclusion
- Therefore, in a reverse-biased p-n junction diode, the magnitude of the electric field is maximum at the p-n junction due to the alignment and concentration of ionized charges, making option C the correct answer.
Understanding this concept is fundamental for analyzing diode behavior under different biasing conditions.
In a reverse-biased p-n junction diode, the behavior of the electric field is crucial to understanding its operation.
Depletion Region Formation
- When the diode is reverse-biased, the external voltage causes the majority charge carriers (holes in p-type and electrons in n-type) to move away from the junction.
- This movement leads to the widening of the depletion region, which is devoid of free charge carriers.
Electric Field Characteristics
- The electric field (E) in the depletion region is established due to the ionized dopants left behind (positive ions in n-side and negative ions in p-side).
- The electric field points from the n-side to the p-side, opposing the applied reverse bias.
Maximum Electric Field Location
- The electric field is not uniform across the depletion region; it varies with distance from the junction.
- The maximum electric field strength occurs at the junction itself (option C).
- This is because the field strength is a result of the concentration of ionized charge, which is highest at the junction where the p-type and n-type materials meet.
Conclusion
- Therefore, in a reverse-biased p-n junction diode, the magnitude of the electric field is maximum at the p-n junction due to the alignment and concentration of ionized charges, making option C the correct answer.
Understanding this concept is fundamental for analyzing diode behavior under different biasing conditions.
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In a p-n junction diode under reverse bias, the magnitude of electric field is maximum ata)the edge of the depletion region on the psideb)the edge of the depletion region on the nsidec)the p-n junctiond)the centre of the depletion region on the n-sideCorrect answer is option 'C'. Can you explain this answer?
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