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In p+n junction diode under reverse bias, the magnitude of electric field is maximum at
- a)the edge of the depletion region on the p-side
- b)the edge of the depletion region on the n-side
- c)the p+n junction
- d)the centre of the depletion region on the n-side
Correct answer is option 'C'. Can you explain this answer?
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In p+n junction diode under reverse bias, the magnitude of electric fi...
The maximum/minimum value of the electric field always occures at the junction interface.
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In p+n junction diode under reverse bias, the magnitude of electric fi...
The correct answer is option 'C' - the p-n junction.
Explanation:
When a p-n junction diode is under reverse bias, the positive terminal of the battery is connected to the n-side of the diode, and the negative terminal is connected to the p-side. This creates an electric field that opposes the flow of current.
The electric field is created due to the accumulation of positive charges on the n-side and negative charges on the p-side near the junction. These charges form a depletion region with a potential barrier that prevents the flow of majority charge carriers (electrons in the n-region and holes in the p-region) across the junction.
In a reverse-biased p-n junction diode, the magnitude of the electric field is maximum at the p-n junction itself. This can be explained by considering the charge distribution in the depletion region.
Key Points:
- In a reverse-biased p-n junction, the electric field is directed from the p-side to the n-side.
- The electric field is strongest at the p-n junction because it is the region with the highest charge density.
- The electric field decreases as we move away from the junction in both the p-side and the n-side.
- At the edges of the depletion region on both the p-side and the n-side, the electric field starts to decrease.
- In the center of the depletion region on the n-side, the electric field is relatively weaker compared to the p-n junction.
Therefore, the correct answer is option 'C' - the p-n junction, as it is the region with the maximum magnitude of the electric field in a reverse-biased p-n junction diode.
Explanation:
When a p-n junction diode is under reverse bias, the positive terminal of the battery is connected to the n-side of the diode, and the negative terminal is connected to the p-side. This creates an electric field that opposes the flow of current.
The electric field is created due to the accumulation of positive charges on the n-side and negative charges on the p-side near the junction. These charges form a depletion region with a potential barrier that prevents the flow of majority charge carriers (electrons in the n-region and holes in the p-region) across the junction.
In a reverse-biased p-n junction diode, the magnitude of the electric field is maximum at the p-n junction itself. This can be explained by considering the charge distribution in the depletion region.
Key Points:
- In a reverse-biased p-n junction, the electric field is directed from the p-side to the n-side.
- The electric field is strongest at the p-n junction because it is the region with the highest charge density.
- The electric field decreases as we move away from the junction in both the p-side and the n-side.
- At the edges of the depletion region on both the p-side and the n-side, the electric field starts to decrease.
- In the center of the depletion region on the n-side, the electric field is relatively weaker compared to the p-n junction.
Therefore, the correct answer is option 'C' - the p-n junction, as it is the region with the maximum magnitude of the electric field in a reverse-biased p-n junction diode.
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In p+n junction diode under reverse bias, the magnitude of electric field is maximum ata)the edge of the depletion region on the p-sideb)the edge of the depletion region on the n-sidec)the p+n junctiond)the centre of the depletion region on the n-sideCorrect answer is option 'C'. Can you explain this answer?
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In p+n junction diode under reverse bias, the magnitude of electric field is maximum ata)the edge of the depletion region on the p-sideb)the edge of the depletion region on the n-sidec)the p+n junctiond)the centre of the depletion region on the n-sideCorrect answer is option 'C'. Can you explain this answer? for Electrical Engineering (EE) 2024 is part of Electrical Engineering (EE) preparation. The Question and answers have been prepared according to the Electrical Engineering (EE) exam syllabus. Information about In p+n junction diode under reverse bias, the magnitude of electric field is maximum ata)the edge of the depletion region on the p-sideb)the edge of the depletion region on the n-sidec)the p+n junctiond)the centre of the depletion region on the n-sideCorrect answer is option 'C'. Can you explain this answer? covers all topics & solutions for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for In p+n junction diode under reverse bias, the magnitude of electric field is maximum ata)the edge of the depletion region on the p-sideb)the edge of the depletion region on the n-sidec)the p+n junctiond)the centre of the depletion region on the n-sideCorrect answer is option 'C'. Can you explain this answer?.
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