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An intrinsic semiconductor has 10 per 18 per metre cube free electrons and is doped with pentavalent impurity of 10.24 per metre cube and a free electron density order increases by?
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An intrinsic semiconductor has 10 per 18 per metre cube free electrons...
Increase in Free Electron Density in Doped Intrinsic Semiconductor


When an intrinsic semiconductor is doped with a pentavalent impurity, it forms an n-type semiconductor. This is because the impurity has one extra valence electron than the semiconductor atoms, creating an excess of free electrons. The increase in free electron density can be explained as follows:


Doping Process



  • Doping an intrinsic semiconductor involves adding impurities to the crystal structure to modify its electrical properties.

  • Pentavalent impurities, such as arsenic or antimony, contain one more valence electron than the semiconductor atoms, leading to the creation of an excess of free electrons.

  • These free electrons are able to move freely throughout the semiconductor, contributing to its conductivity.



Concentration of Impurities



  • The increase in free electron density is directly proportional to the concentration of impurities added to the intrinsic semiconductor.

  • In this case, the pentavalent impurity has a concentration of 10.24 per meter cube.

  • This means that for every meter cube of semiconductor material, there are 10.24 pentavalent impurities added to it.



Impact on Free Electron Density



  • Due to the presence of the pentavalent impurity, there is an additional source of free electrons in the semiconductor material.

  • The concentration of free electrons in the semiconductor material is directly proportional to the concentration of impurities added to it.

  • Therefore, the increase in free electron density can be calculated as follows:


    • Initial free electron density = 10 per meter cube

    • Free electron density due to impurity = 10.24 per meter cube

    • Total free electron density = Initial free electron density + Free electron density due to impurity

    • Total free electron density = 10 + 10.24 = 20.24 per meter cube




Conclusion


In conclusion, doping an intrinsic semiconductor with a pentavalent impurity leads to an increase in free electron density. The concentration of impurities added to the semiconductor material directly affects the increase in free electron density. In this case, the free electron density increases from 10 per meter cube to 20.24 per meter cube.
Community Answer
An intrinsic semiconductor has 10 per 18 per metre cube free electrons...
Use mass action law.. Ne × Nh = (Ni)*2 . and you will get your answer ok
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An intrinsic semiconductor has 10 per 18 per metre cube free electrons and is doped with pentavalent impurity of 10.24 per metre cube and a free electron density order increases by?
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