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A silicon (PN) junction at a temperature of 20ºC has a reverse saturation current of 10 pico Ampere. The reverse saturation current at 40ºC for the same bias is approximately.
- a)30 pA
- b)40 pA
- c)50 pA
- d)60 pA
Correct answer is option 'B'. Can you explain this answer?
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A silicon (PN) junction at a temperature of 20ºC has a reverse sa...
By increasing of temperature by 10ºC, Io become double so by increasing temperature 20ºC, Io become 4 time than initial value... and it is 40 PA.
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A silicon (PN) junction at a temperature of 20ºC has a reverse sa...
°C has a forward voltage of approximately 0.7 V. This means that when a voltage of 0.7 V is applied to the PN junction in the forward direction (anode connected to the P-type material and cathode connected to the N-type material), current will start to flow through the junction.
The current flow occurs due to the movement of majority carriers across the junction. In the P-type material, the majority carriers are holes, while in the N-type material, they are electrons. When a forward voltage is applied to the junction, the holes in the P-type material are pushed towards the junction and the electrons in the N-type material are also pushed towards the junction.
At the junction, the holes and electrons combine, creating a depletion region where there are no majority carriers. The depletion region acts as a barrier to further current flow, but when the applied voltage is high enough to overcome this barrier, the current starts to flow through the junction.
The amount of current that flows through the junction depends on the voltage applied and the resistance of the material. The resistance of the material can be reduced by doping the material with impurities, which increases the number of majority carriers and reduces the size of the depletion region.
In summary, a silicon PN junction at a temperature of 20°C has a forward voltage of approximately 0.7 V, and current flows through the junction when this voltage is applied in the forward direction. This current flow occurs due to the movement of majority carriers across the junction, and the amount of current depends on the voltage applied and the resistance of the material.
The current flow occurs due to the movement of majority carriers across the junction. In the P-type material, the majority carriers are holes, while in the N-type material, they are electrons. When a forward voltage is applied to the junction, the holes in the P-type material are pushed towards the junction and the electrons in the N-type material are also pushed towards the junction.
At the junction, the holes and electrons combine, creating a depletion region where there are no majority carriers. The depletion region acts as a barrier to further current flow, but when the applied voltage is high enough to overcome this barrier, the current starts to flow through the junction.
The amount of current that flows through the junction depends on the voltage applied and the resistance of the material. The resistance of the material can be reduced by doping the material with impurities, which increases the number of majority carriers and reduces the size of the depletion region.
In summary, a silicon PN junction at a temperature of 20°C has a forward voltage of approximately 0.7 V, and current flows through the junction when this voltage is applied in the forward direction. This current flow occurs due to the movement of majority carriers across the junction, and the amount of current depends on the voltage applied and the resistance of the material.
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A silicon (PN) junction at a temperature of 20ºC has a reverse saturation current of 10 pico Ampere. The reverse saturation current at 40ºC for the same bias is approximately.a)30 pAb)40 pAc)50 pAd)60 pACorrect answer is option 'B'. Can you explain this answer?
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