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The Conductivity of a p-type Germanium at 300 k is 100(ohm-cm)-1. The intrinsic concentration of germanium at 300 k is 2.5 x 1013/cm3 & its mobility is given as 1800 cm2/v-s & atoms/cm3 = 4.4 x 1022. Which of the following statement is/are correct, If a voltage source of 0.010V is applied across the semiconductor & the dimension of the p-type germanium piece is (1 x 1) m:-a)The Concentration of holes in Ge is 3.468 x 1017/cm3.b)Concentration of electrons will be 1.802 x 10-4/cm3.c)Current through the Ge semiconductor is 100 amp.d)Resistance of the Ge is 10-2Ω.Correct answer is option 'A,C'. Can you explain this answer? for Physics 2024 is part of Physics preparation. The Question and answers have been prepared according to the Physics exam syllabus. Information about The Conductivity of a p-type Germanium at 300 k is 100(ohm-cm)-1. The intrinsic concentration of germanium at 300 k is 2.5 x 1013/cm3 & its mobility is given as 1800 cm2/v-s & atoms/cm3 = 4.4 x 1022. Which of the following statement is/are correct, If a voltage source of 0.010V is applied across the semiconductor & the dimension of the p-type germanium piece is (1 x 1) m:-a)The Concentration of holes in Ge is 3.468 x 1017/cm3.b)Concentration of electrons will be 1.802 x 10-4/cm3.c)Current through the Ge semiconductor is 100 amp.d)Resistance of the Ge is 10-2Ω.Correct answer is option 'A,C'. Can you explain this answer? covers all topics & solutions for Physics 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for The Conductivity of a p-type Germanium at 300 k is 100(ohm-cm)-1. The intrinsic concentration of germanium at 300 k is 2.5 x 1013/cm3 & its mobility is given as 1800 cm2/v-s & atoms/cm3 = 4.4 x 1022. Which of the following statement is/are correct, If a voltage source of 0.010V is applied across the semiconductor & the dimension of the p-type germanium piece is (1 x 1) m:-a)The Concentration of holes in Ge is 3.468 x 1017/cm3.b)Concentration of electrons will be 1.802 x 10-4/cm3.c)Current through the Ge semiconductor is 100 amp.d)Resistance of the Ge is 10-2Ω.Correct answer is option 'A,C'. Can you explain this answer?.

Solutions for The Conductivity of a p-type Germanium at 300 k is 100(ohm-cm)-1. The intrinsic concentration of germanium at 300 k is 2.5 x 1013/cm3 & its mobility is given as 1800 cm2/v-s & atoms/cm3 = 4.4 x 1022. Which of the following statement is/are correct, If a voltage source of 0.010V is applied across the semiconductor & the dimension of the p-type germanium piece is (1 x 1) m:-a)The Concentration of holes in Ge is 3.468 x 1017/cm3.b)Concentration of electrons will be 1.802 x 10-4/cm3.c)Current through the Ge semiconductor is 100 amp.d)Resistance of the Ge is 10-2Ω.Correct answer is option 'A,C'. Can you explain this answer? in English & in Hindi are available as part of our courses for Physics. Download more important topics, notes, lectures and mock test series for Physics Exam by signing up for free.

Here you can find the meaning of The Conductivity of a p-type Germanium at 300 k is 100(ohm-cm)-1. The intrinsic concentration of germanium at 300 k is 2.5 x 1013/cm3 & its mobility is given as 1800 cm2/v-s & atoms/cm3 = 4.4 x 1022. Which of the following statement is/are correct, If a voltage source of 0.010V is applied across the semiconductor & the dimension of the p-type germanium piece is (1 x 1) m:-a)The Concentration of holes in Ge is 3.468 x 1017/cm3.b)Concentration of electrons will be 1.802 x 10-4/cm3.c)Current through the Ge semiconductor is 100 amp.d)Resistance of the Ge is 10-2Ω.Correct answer is option 'A,C'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of The Conductivity of a p-type Germanium at 300 k is 100(ohm-cm)-1. The intrinsic concentration of germanium at 300 k is 2.5 x 1013/cm3 & its mobility is given as 1800 cm2/v-s & atoms/cm3 = 4.4 x 1022. Which of the following statement is/are correct, If a voltage source of 0.010V is applied across the semiconductor & the dimension of the p-type germanium piece is (1 x 1) m:-a)The Concentration of holes in Ge is 3.468 x 1017/cm3.b)Concentration of electrons will be 1.802 x 10-4/cm3.c)Current through the Ge semiconductor is 100 amp.d)Resistance of the Ge is 10-2Ω.Correct answer is option 'A,C'. Can you explain this answer?, a detailed solution for The Conductivity of a p-type Germanium at 300 k is 100(ohm-cm)-1. The intrinsic concentration of germanium at 300 k is 2.5 x 1013/cm3 & its mobility is given as 1800 cm2/v-s & atoms/cm3 = 4.4 x 1022. Which of the following statement is/are correct, If a voltage source of 0.010V is applied across the semiconductor & the dimension of the p-type germanium piece is (1 x 1) m:-a)The Concentration of holes in Ge is 3.468 x 1017/cm3.b)Concentration of electrons will be 1.802 x 10-4/cm3.c)Current through the Ge semiconductor is 100 amp.d)Resistance of the Ge is 10-2Ω.Correct answer is option 'A,C'. Can you explain this answer? has been provided alongside types of The Conductivity of a p-type Germanium at 300 k is 100(ohm-cm)-1. The intrinsic concentration of germanium at 300 k is 2.5 x 1013/cm3 & its mobility is given as 1800 cm2/v-s & atoms/cm3 = 4.4 x 1022. Which of the following statement is/are correct, If a voltage source of 0.010V is applied across the semiconductor & the dimension of the p-type germanium piece is (1 x 1) m:-a)The Concentration of holes in Ge is 3.468 x 1017/cm3.b)Concentration of electrons will be 1.802 x 10-4/cm3.c)Current through the Ge semiconductor is 100 amp.d)Resistance of the Ge is 10-2Ω.Correct answer is option 'A,C'. Can you explain this answer? theory, EduRev gives you an ample number of questions to practice The Conductivity of a p-type Germanium at 300 k is 100(ohm-cm)-1. The intrinsic concentration of germanium at 300 k is 2.5 x 1013/cm3 & its mobility is given as 1800 cm2/v-s & atoms/cm3 = 4.4 x 1022. Which of the following statement is/are correct, If a voltage source of 0.010V is applied across the semiconductor & the dimension of the p-type germanium piece is (1 x 1) m:-a)The Concentration of holes in Ge is 3.468 x 1017/cm3.b)Concentration of electrons will be 1.802 x 10-4/cm3.c)Current through the Ge semiconductor is 100 amp.d)Resistance of the Ge is 10-2Ω.Correct answer is option 'A,C'. Can you explain this answer? tests, examples and also practice Physics tests.