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Pure Si at 500K has equal number of electron (ne) and hole (nh) concentrations of 1.5 × 1016 m-3. Doping by indium increases nh to 4.5 × 1022 m-3. The doped semiconductor is of :a)n-type with electron concentration ne = 5 × 1022 m-3b)p-type with electron concentration ne = 2.5 ×1010 m-3c)n-type with electron concentration ne = 2.5 × 1023 m-3d)p-type having electron concentrations ne = 5 × 109 m-3Correct answer is option 'D'. Can you explain this answer? for NEET 2024 is part of NEET preparation. The Question and answers have been prepared according to the NEET exam syllabus. Information about Pure Si at 500K has equal number of electron (ne) and hole (nh) concentrations of 1.5 × 1016 m-3. Doping by indium increases nh to 4.5 × 1022 m-3. The doped semiconductor is of :a)n-type with electron concentration ne = 5 × 1022 m-3b)p-type with electron concentration ne = 2.5 ×1010 m-3c)n-type with electron concentration ne = 2.5 × 1023 m-3d)p-type having electron concentrations ne = 5 × 109 m-3Correct answer is option 'D'. Can you explain this answer? covers all topics & solutions for NEET 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Pure Si at 500K has equal number of electron (ne) and hole (nh) concentrations of 1.5 × 1016 m-3. Doping by indium increases nh to 4.5 × 1022 m-3. The doped semiconductor is of :a)n-type with electron concentration ne = 5 × 1022 m-3b)p-type with electron concentration ne = 2.5 ×1010 m-3c)n-type with electron concentration ne = 2.5 × 1023 m-3d)p-type having electron concentrations ne = 5 × 109 m-3Correct answer is option 'D'. Can you explain this answer?.

Solutions for Pure Si at 500K has equal number of electron (ne) and hole (nh) concentrations of 1.5 × 1016 m-3. Doping by indium increases nh to 4.5 × 1022 m-3. The doped semiconductor is of :a)n-type with electron concentration ne = 5 × 1022 m-3b)p-type with electron concentration ne = 2.5 ×1010 m-3c)n-type with electron concentration ne = 2.5 × 1023 m-3d)p-type having electron concentrations ne = 5 × 109 m-3Correct answer is option 'D'. Can you explain this answer? in English & in Hindi are available as part of our courses for NEET. Download more important topics, notes, lectures and mock test series for NEET Exam by signing up for free.

Here you can find the meaning of Pure Si at 500K has equal number of electron (ne) and hole (nh) concentrations of 1.5 × 1016 m-3. Doping by indium increases nh to 4.5 × 1022 m-3. The doped semiconductor is of :a)n-type with electron concentration ne = 5 × 1022 m-3b)p-type with electron concentration ne = 2.5 ×1010 m-3c)n-type with electron concentration ne = 2.5 × 1023 m-3d)p-type having electron concentrations ne = 5 × 109 m-3Correct answer is option 'D'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of Pure Si at 500K has equal number of electron (ne) and hole (nh) concentrations of 1.5 × 1016 m-3. Doping by indium increases nh to 4.5 × 1022 m-3. The doped semiconductor is of :a)n-type with electron concentration ne = 5 × 1022 m-3b)p-type with electron concentration ne = 2.5 ×1010 m-3c)n-type with electron concentration ne = 2.5 × 1023 m-3d)p-type having electron concentrations ne = 5 × 109 m-3Correct answer is option 'D'. Can you explain this answer?, a detailed solution for Pure Si at 500K has equal number of electron (ne) and hole (nh) concentrations of 1.5 × 1016 m-3. Doping by indium increases nh to 4.5 × 1022 m-3. The doped semiconductor is of :a)n-type with electron concentration ne = 5 × 1022 m-3b)p-type with electron concentration ne = 2.5 ×1010 m-3c)n-type with electron concentration ne = 2.5 × 1023 m-3d)p-type having electron concentrations ne = 5 × 109 m-3Correct answer is option 'D'. Can you explain this answer? has been provided alongside types of Pure Si at 500K has equal number of electron (ne) and hole (nh) concentrations of 1.5 × 1016 m-3. Doping by indium increases nh to 4.5 × 1022 m-3. The doped semiconductor is of :a)n-type with electron concentration ne = 5 × 1022 m-3b)p-type with electron concentration ne = 2.5 ×1010 m-3c)n-type with electron concentration ne = 2.5 × 1023 m-3d)p-type having electron concentrations ne = 5 × 109 m-3Correct answer is option 'D'. Can you explain this answer? theory, EduRev gives you an ample number of questions to practice Pure Si at 500K has equal number of electron (ne) and hole (nh) concentrations of 1.5 × 1016 m-3. Doping by indium increases nh to 4.5 × 1022 m-3. The doped semiconductor is of :a)n-type with electron concentration ne = 5 × 1022 m-3b)p-type with electron concentration ne = 2.5 ×1010 m-3c)n-type with electron concentration ne = 2.5 × 1023 m-3d)p-type having electron concentrations ne = 5 × 109 m-3Correct answer is option 'D'. Can you explain this answer? tests, examples and also practice NEET tests.