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Consider the following statements for a metal oxide semiconductor field after effect transistor
(MOSFET):
P : As channel length reduces, OFF-state current increases
Q : As channel length reduces, output resistance increases
R : As channel length reduces, threshold voltage remains constant
S: As channel reduces, ON current increases.
Which of the above statements are INCORRECT?
(MOSFET):
P : As channel length reduces, OFF-state current increases
Q : As channel length reduces, output resistance increases
R : As channel length reduces, threshold voltage remains constant
S: As channel reduces, ON current increases.
Which of the above statements are INCORRECT?
- a)P and Q
- b)P and S
- c)Q and R
- d)R and S
Correct answer is option 'C'. Can you explain this answer?
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Verified Answer
Consider the following statements for a metal oxide semiconductor fiel...
P: TRUE
Q: FALSE, As channel length reduces, output resistance reduces
R: FALSE: As channel length reduces, threshold voltage reduces
S: TRUE
Q: FALSE, As channel length reduces, output resistance reduces
R: FALSE: As channel length reduces, threshold voltage reduces
S: TRUE
Most Upvoted Answer
Consider the following statements for a metal oxide semiconductor fiel...
Incorrect Statements in the MOSFET Characteristics:
P : As channel length reduces, OFF-state current increases
Q : As channel length reduces, output resistance increases
S: As channel reduces, ON current increases.
Explanation:
P: As channel length reduces, OFF-state current increases.
This statement is incorrect. In a MOSFET, as the channel length reduces, the OFF-state current decreases. This is because a shorter channel length reduces the distance between the source and drain, decreasing the probability of electrons tunneling through the oxide layer and increasing the threshold voltage.
Q: As channel length reduces, output resistance increases.
This statement is correct. As the channel length reduces in a MOSFET, the output resistance increases. This is because a shorter channel length leads to a higher drain-source current and a lower output resistance.
R: As channel length reduces, threshold voltage remains constant.
This statement is correct. The threshold voltage of a MOSFET remains constant regardless of the channel length. The threshold voltage is determined by the doping concentration of the substrate and the work function of the gate material, and it is independent of the channel length.
S: As channel length reduces, ON current increases.
This statement is incorrect. As the channel length reduces, the ON current does not necessarily increase. The ON current is primarily determined by the gate-source voltage and the channel width. While reducing the channel length can increase the ON current to some extent, it is not the only factor affecting the ON current. The channel width and other device parameters also play a significant role in determining the ON current.
In conclusion, the incorrect statements are P and S.
P : As channel length reduces, OFF-state current increases
Q : As channel length reduces, output resistance increases
S: As channel reduces, ON current increases.
Explanation:
P: As channel length reduces, OFF-state current increases.
This statement is incorrect. In a MOSFET, as the channel length reduces, the OFF-state current decreases. This is because a shorter channel length reduces the distance between the source and drain, decreasing the probability of electrons tunneling through the oxide layer and increasing the threshold voltage.
Q: As channel length reduces, output resistance increases.
This statement is correct. As the channel length reduces in a MOSFET, the output resistance increases. This is because a shorter channel length leads to a higher drain-source current and a lower output resistance.
R: As channel length reduces, threshold voltage remains constant.
This statement is correct. The threshold voltage of a MOSFET remains constant regardless of the channel length. The threshold voltage is determined by the doping concentration of the substrate and the work function of the gate material, and it is independent of the channel length.
S: As channel length reduces, ON current increases.
This statement is incorrect. As the channel length reduces, the ON current does not necessarily increase. The ON current is primarily determined by the gate-source voltage and the channel width. While reducing the channel length can increase the ON current to some extent, it is not the only factor affecting the ON current. The channel width and other device parameters also play a significant role in determining the ON current.
In conclusion, the incorrect statements are P and S.
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Consider the following statements for a metal oxide semiconductor field after effect transistor(MOSFET):P : As channel length reduces, OFF-state current increasesQ : As channel length reduces, output resistance increasesR : As channel length reduces, threshold voltage remains constantS: As channel reduces, ON current increases.Which of the above statements are INCORRECT?a)P and Qb)P and Sc)Q and Rd)R and SCorrect answer is option 'C'. Can you explain this answer?
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