GATE Exam > GATE Questions > Consider the following statements for a metal...
Start Learning for Free
Consider the following statements for a metal oxide semiconductor field after effect transistor
(MOSFET):
P : As channel length reduces, OFF-state current increases
Q : As channel length reduces, output resistance increases
R : As channel length reduces, threshold voltage remains constant
S: As channel reduces, ON current increases.
Which of the above statements are INCORRECT?
(MOSFET):
P : As channel length reduces, OFF-state current increases
Q : As channel length reduces, output resistance increases
R : As channel length reduces, threshold voltage remains constant
S: As channel reduces, ON current increases.
Which of the above statements are INCORRECT?
- a)P and Q
- b)P and S
- c)Q and R
- d)R and S
Correct answer is option 'C'. Can you explain this answer?
| FREE This question is part of | Download PDF Attempt this Test |
Verified Answer
Consider the following statements for a metal oxide semiconductor fiel...
P: TRUE
Q: FALSE, As channel length reduces, output resistance reduces
R: FALSE: As channel length reduces, threshold voltage reduces
S: TRUE
Q: FALSE, As channel length reduces, output resistance reduces
R: FALSE: As channel length reduces, threshold voltage reduces
S: TRUE
Most Upvoted Answer
Consider the following statements for a metal oxide semiconductor fiel...
Incorrect Statements in the MOSFET Characteristics:
P : As channel length reduces, OFF-state current increases
Q : As channel length reduces, output resistance increases
S: As channel reduces, ON current increases.
Explanation:
P: As channel length reduces, OFF-state current increases.
This statement is incorrect. In a MOSFET, as the channel length reduces, the OFF-state current decreases. This is because a shorter channel length reduces the distance between the source and drain, decreasing the probability of electrons tunneling through the oxide layer and increasing the threshold voltage.
Q: As channel length reduces, output resistance increases.
This statement is correct. As the channel length reduces in a MOSFET, the output resistance increases. This is because a shorter channel length leads to a higher drain-source current and a lower output resistance.
R: As channel length reduces, threshold voltage remains constant.
This statement is correct. The threshold voltage of a MOSFET remains constant regardless of the channel length. The threshold voltage is determined by the doping concentration of the substrate and the work function of the gate material, and it is independent of the channel length.
S: As channel length reduces, ON current increases.
This statement is incorrect. As the channel length reduces, the ON current does not necessarily increase. The ON current is primarily determined by the gate-source voltage and the channel width. While reducing the channel length can increase the ON current to some extent, it is not the only factor affecting the ON current. The channel width and other device parameters also play a significant role in determining the ON current.
In conclusion, the incorrect statements are P and S.
P : As channel length reduces, OFF-state current increases
Q : As channel length reduces, output resistance increases
S: As channel reduces, ON current increases.
Explanation:
P: As channel length reduces, OFF-state current increases.
This statement is incorrect. In a MOSFET, as the channel length reduces, the OFF-state current decreases. This is because a shorter channel length reduces the distance between the source and drain, decreasing the probability of electrons tunneling through the oxide layer and increasing the threshold voltage.
Q: As channel length reduces, output resistance increases.
This statement is correct. As the channel length reduces in a MOSFET, the output resistance increases. This is because a shorter channel length leads to a higher drain-source current and a lower output resistance.
R: As channel length reduces, threshold voltage remains constant.
This statement is correct. The threshold voltage of a MOSFET remains constant regardless of the channel length. The threshold voltage is determined by the doping concentration of the substrate and the work function of the gate material, and it is independent of the channel length.
S: As channel length reduces, ON current increases.
This statement is incorrect. As the channel length reduces, the ON current does not necessarily increase. The ON current is primarily determined by the gate-source voltage and the channel width. While reducing the channel length can increase the ON current to some extent, it is not the only factor affecting the ON current. The channel width and other device parameters also play a significant role in determining the ON current.
In conclusion, the incorrect statements are P and S.
|
Explore Courses for GATE exam
|
|
Similar GATE Doubts
Consider the following statements for a metal oxide semiconductor field after effect transistor(MOSFET):P : As channel length reduces, OFF-state current increasesQ : As channel length reduces, output resistance increasesR : As channel length reduces, threshold voltage remains constantS: As channel reduces, ON current increases.Which of the above statements are INCORRECT?a)P and Qb)P and Sc)Q and Rd)R and SCorrect answer is option 'C'. Can you explain this answer?
Question Description
Consider the following statements for a metal oxide semiconductor field after effect transistor(MOSFET):P : As channel length reduces, OFF-state current increasesQ : As channel length reduces, output resistance increasesR : As channel length reduces, threshold voltage remains constantS: As channel reduces, ON current increases.Which of the above statements are INCORRECT?a)P and Qb)P and Sc)Q and Rd)R and SCorrect answer is option 'C'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about Consider the following statements for a metal oxide semiconductor field after effect transistor(MOSFET):P : As channel length reduces, OFF-state current increasesQ : As channel length reduces, output resistance increasesR : As channel length reduces, threshold voltage remains constantS: As channel reduces, ON current increases.Which of the above statements are INCORRECT?a)P and Qb)P and Sc)Q and Rd)R and SCorrect answer is option 'C'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider the following statements for a metal oxide semiconductor field after effect transistor(MOSFET):P : As channel length reduces, OFF-state current increasesQ : As channel length reduces, output resistance increasesR : As channel length reduces, threshold voltage remains constantS: As channel reduces, ON current increases.Which of the above statements are INCORRECT?a)P and Qb)P and Sc)Q and Rd)R and SCorrect answer is option 'C'. Can you explain this answer?.
Consider the following statements for a metal oxide semiconductor field after effect transistor(MOSFET):P : As channel length reduces, OFF-state current increasesQ : As channel length reduces, output resistance increasesR : As channel length reduces, threshold voltage remains constantS: As channel reduces, ON current increases.Which of the above statements are INCORRECT?a)P and Qb)P and Sc)Q and Rd)R and SCorrect answer is option 'C'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about Consider the following statements for a metal oxide semiconductor field after effect transistor(MOSFET):P : As channel length reduces, OFF-state current increasesQ : As channel length reduces, output resistance increasesR : As channel length reduces, threshold voltage remains constantS: As channel reduces, ON current increases.Which of the above statements are INCORRECT?a)P and Qb)P and Sc)Q and Rd)R and SCorrect answer is option 'C'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider the following statements for a metal oxide semiconductor field after effect transistor(MOSFET):P : As channel length reduces, OFF-state current increasesQ : As channel length reduces, output resistance increasesR : As channel length reduces, threshold voltage remains constantS: As channel reduces, ON current increases.Which of the above statements are INCORRECT?a)P and Qb)P and Sc)Q and Rd)R and SCorrect answer is option 'C'. Can you explain this answer?.
Solutions for Consider the following statements for a metal oxide semiconductor field after effect transistor(MOSFET):P : As channel length reduces, OFF-state current increasesQ : As channel length reduces, output resistance increasesR : As channel length reduces, threshold voltage remains constantS: As channel reduces, ON current increases.Which of the above statements are INCORRECT?a)P and Qb)P and Sc)Q and Rd)R and SCorrect answer is option 'C'. Can you explain this answer? in English & in Hindi are available as part of our courses for GATE.
Download more important topics, notes, lectures and mock test series for GATE Exam by signing up for free.
Here you can find the meaning of Consider the following statements for a metal oxide semiconductor field after effect transistor(MOSFET):P : As channel length reduces, OFF-state current increasesQ : As channel length reduces, output resistance increasesR : As channel length reduces, threshold voltage remains constantS: As channel reduces, ON current increases.Which of the above statements are INCORRECT?a)P and Qb)P and Sc)Q and Rd)R and SCorrect answer is option 'C'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of
Consider the following statements for a metal oxide semiconductor field after effect transistor(MOSFET):P : As channel length reduces, OFF-state current increasesQ : As channel length reduces, output resistance increasesR : As channel length reduces, threshold voltage remains constantS: As channel reduces, ON current increases.Which of the above statements are INCORRECT?a)P and Qb)P and Sc)Q and Rd)R and SCorrect answer is option 'C'. Can you explain this answer?, a detailed solution for Consider the following statements for a metal oxide semiconductor field after effect transistor(MOSFET):P : As channel length reduces, OFF-state current increasesQ : As channel length reduces, output resistance increasesR : As channel length reduces, threshold voltage remains constantS: As channel reduces, ON current increases.Which of the above statements are INCORRECT?a)P and Qb)P and Sc)Q and Rd)R and SCorrect answer is option 'C'. Can you explain this answer? has been provided alongside types of Consider the following statements for a metal oxide semiconductor field after effect transistor(MOSFET):P : As channel length reduces, OFF-state current increasesQ : As channel length reduces, output resistance increasesR : As channel length reduces, threshold voltage remains constantS: As channel reduces, ON current increases.Which of the above statements are INCORRECT?a)P and Qb)P and Sc)Q and Rd)R and SCorrect answer is option 'C'. Can you explain this answer? theory, EduRev gives you an
ample number of questions to practice Consider the following statements for a metal oxide semiconductor field after effect transistor(MOSFET):P : As channel length reduces, OFF-state current increasesQ : As channel length reduces, output resistance increasesR : As channel length reduces, threshold voltage remains constantS: As channel reduces, ON current increases.Which of the above statements are INCORRECT?a)P and Qb)P and Sc)Q and Rd)R and SCorrect answer is option 'C'. Can you explain this answer? tests, examples and also practice GATE tests.
|
|
Explore Courses for GATE exam
|
|
Signup for Free!
Signup to see your scores go up within 7 days! Learn & Practice with 1000+ FREE Notes, Videos & Tests.
|
© EduRev
|
Education Revolution
|
Follow Us
|
Signup to see your scores
go up within 7 days!
Access 1000+ FREE Docs, Videos and Tests
Takes less than 10 seconds to signup